SIEGET Search Results

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

MARKING CODE 13t sot363

Abstract: A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens
Contextual Info: SIEMENS BGA425 S i-M M IC -A m p lifier in SIEGET 25-Technology Prelim inary Data # # # # # # # M ultifunctional Case. 50 £2 Block LNA/M IX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2=22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V D= 3 V ,lD=9.5m A)

420ECSP

Abstract: BFP420ecsp marking BFP
Contextual Info: SIEGET
25 BFP 420ECSP NPN Silicon RF Transistor Preliminary data
For oscillators up to 10 GHz XY
For high gain low noise amplifiers 4
Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BFP405

Abstract: BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405
Contextual Info: Application Note No. 020 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET 25 BFP405. The design emphasis has been on achieving a low noise

siemens rs 1003

Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Contextual Info: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability

marking AUs

Abstract: BFP420F BFP540FESD amplifier marking code a
Contextual Info: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)

BFP405

Abstract: A03 RF amplifier A03 amplifier BCR400
Contextual Info: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise

transistor b 1238

Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1

SOT363-Package

Abstract: BGA428 SOT-363 dc voltage step up amplifier circuit AN062 BGA428 amplifier transistor application based circuit amplifier TRANSISTOR 12 GHZ
Contextual Info: Application Note No. 062 Silicon Discretes A Low Parts Count Low Noise Amplifier for GPS Applications using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.4 dB at 1.575 GHz

142001

Abstract: BFP490 SCT595 SCT-595
Contextual Info: SIEGET
25 BFP490 NPN Silicon RF Transistor 4
For high power amplifiers 5
Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3
Transition frequency fT > 17 GHz 2
Gold metallization for high reliability 1
SIEGET  25 GHz fT - Line

420 NPN Silicon RF Transistor

Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
Contextual Info: SIEGET
25 BFP 420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

RF TRANSISTOR 10GHZ

Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101

a06 transistor

Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Contextual Info: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line

AMS 3630

Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability

Contextual Info: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz

IC 7481 pin configuration

Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

BFP420 application notes

Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams
Contextual Info: SIEGET
25 BFP420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: SIEGET
25 BFP450 NPN Silicon RF Transistor 3
For medium power amplifiers 4
Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2
Transition frequency f T = 24 GHz
Gold metallization for high reliability

transistor marking BMs

Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

AN051A

Abstract: transistor cross ref BFP520 application notes AN051 BFP520 2500G Ghz dB transistor N051 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ
Contextual Info: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 1 SIEGET45 - Low Noise Amplifier with BFP520 T r a n s i s t o r a t 1 .9 G H z R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by Infineon Technologies AG

BFP420 application notes 900MHz

Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
Contextual Info: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe