SIEMENS 800 169 O Search Results

BS4 siemens

Abstract: BC 241 d0415 bc167 siemens bc169c siemens BC167 BC169B BC169 siemens Pm 90 87 168c
Contextual Info: S IE D i • Ö235b05 OGMlSlb ‘î l S « S I E G SIEMENS AKTIEN6ESELLSCHAF NPN Silicon AF Transistors BC 167 . BC 169 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 257, BC 258, BC 259 PNP Type BC BC BC

RM10 ferrite siemens

Abstract: siemens rm10 core corrugated cardboard ur42
Contextual Info: Packing Survey of packing modes Ferrites RM cores PM cores P cores P core halves TT/PR cores EP cores E cores ELP cores ER cores ETD cores EC cores EFD cores EV cores DE cores U and I cores Ring cores Type RM 3 to RM 10 RM 12, RM 14 PM50/39 to PM114/93 all P cores

sot-23 MARKING CODE ZA

Abstract: BFQ29P
Contextual Info: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Contextual Info: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.

siemens s450

Contextual Info: NPN Silicon RF Transistor BFR 93A • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. E CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

A21E

Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

marking GG

Abstract: marking code 604 SOT23
Contextual Info: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package

321 SOT

Abstract: DIP-6 bsp300 SOT23_215 BSS125
Contextual Info: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416

Contextual Info: Snap-In Capacitors L L Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board

N48 630

Abstract: N48 250 B65669-E6-X22 B65531D160A48 B65611-N250-G48 B65661-T400-A48 Siemens N48 Siemens B65541 siemens N26 core P 18 x 11 B65532-B-T2
Contextual Info: p Cores Example o f an assembly set J Adjusting screw drivef for assembly only >v Adjusting screw Yoke Core Coil former Insulating washer 1 Core Threaded sleeve (glued-in) Insulating washer 2 Terminal carrier Qidmonc Matsushita Components 77 P Cores M ounting dim ensions of the assem bly set (mm)

P32-A

Abstract: BUZ 140 L C67078-S1331-A2
Contextual Info: SIEM ENS SIPMOS Power Transistors • • • BUZ 12 BUZ 12 A N channel Enhancement mode Avalanche-rated / Type Id To •^DS (on) Package 1> Ordering Code 0.028 TO-220 AB C67078-S1331-A2 TO-220 AB C67078-S1331 -A3 Symbol Values BUZ 12 50 V 42 A 65 °C

ptc pspice

Abstract: SIOV-B40K130 LS40K130QP MatsuSHITA VARISTORS LS40K550QP LS40K130 Q69X4 LS40K680QP LS40K440QP LS40K320QP
Contextual Info: Strap Varistors Strap Varistors Construction ● Rectangular varistor element as in SIOV-B40 ● Coating: epoxy resin, flame-retardant to UL 94 V-0 ● Bolt-holed strap terminals for screw fixing or soldering Features ● Electrical equivalents to type series

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

012E3

Contextual Info: SIEMENS CF 750 GaAs MMIC • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz Mixer and amplifier applications in handheld equipment Low power consumption, 2mA operating current typ. Operating voltage range: 3 to 6V Ion-implanted planar structure

Contextual Info: Snap-In Capacitors LL Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

siemens KS 630 S

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 12 BUZ 12 A • N channel • Enhancement mode • Avalanche-rated Type Vos I d To ^ D S on Package1) Ordering Code BUZ 12 50 V 42 A 65 *C 0.028 Û TO-220 AB C67078-S1331-A2 BUZ 12 A 50 V 42 A 44 'C 0.035 Q TO-220 AB

MMIC "SOT 89" marking

Abstract: marking HLEH Siemens MMIC MMIC marking code GA
Contextual Info: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure

MMIC marking CODE cf

Abstract: ma com 4 pin mmic A7560
Contextual Info: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V