PA 6/6 GF30 SIEMENS
Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Text: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290
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Siemens Ferrite B65541
Abstract: TESLA mh 7400 mh 7400 tesla MDT 760 THYRISTOR ARALDITE AY 105 ARALDITE HY 956 EPF S20 Siemens Ferrite B64290 ETD54 n62 ARALDITE D AY 103
Text: Contents Selector Guide Index of Part Numbers 5 11 23 SIFERRIT Materials 29 General – Definitions Application Notes Processing Notes 111 129 151 Packing Quality Considerations Standards and Specifications 165 175 179 RM Cores 183 PM Cores 283 P Cores P Core Halves P Cores for Proximity Switches
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siemens ferrite n22 p14
Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches
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B1060
Abstract: RJ-9 Socket V23806-A3-C3 TC-266C2EP "Angle Sensors" siemens V23806-A8-C1 V23806-A7-C3 E-28760 SMA 905 ferrule dimensions
Text: Multistandard Transceiver Family Fast Ethernet • Product Information FDDI · AMT · B-ISDN · Fibre Channel Contents Page Page Multistandard Transceiver Family 3 LCF 7 dB FDDI Transceiver 6 LCF 11 dB FDDI and Fast Ethernet Transceiver 8 Appendix A Appendix B
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D-81359
A23001-G40-P046-X-7600
PS09961
B1060
RJ-9 Socket
V23806-A3-C3
TC-266C2EP
"Angle Sensors"
siemens
V23806-A8-C1
V23806-A7-C3
E-28760
SMA 905 ferrule dimensions
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C945 p 331
Abstract: B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060
Text: Ordering Information Subject Index 5 11 A Chokes and Transformers SMD Transformers Ferrites and Accessories 15 29 37 B Thick-Film Chip Resistors NTC Thermistors PTC Thermistors Varistors Surge Arresters 121 127 143 155 167 C Ceramic Capacitors Film Capacitors
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A0297
C945 p 331
B1-C90/20
TRANSISTOR K1006
siemens MKL
T60405-R6131-X037
t60405-s4615-x027
c945 p 331 transistor
transistor C5478
siemens PTC C860
T60405-A4220-X060
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N22 Schalenkern
Abstract: Siemens Ferrite N47 Siemens Ferrite B65541 EFD20 trafo ETD54 n62 R6KE Siemens Ferrite B64290 Siemens Ferrite n67 EC70 N27 siferrit n27
Text: Inhaltsverzeichnis Bauformen-Übersicht Bauformnummern-Verzeichnis SIFERRIT-Werkstoffe Seite 5 11 25 31 Allgemeines - Begriffsbestimmungen Anwendungs-, Verarbeitungshinweise Verpackung 103 121 163 Angaben zur Qualität Normen und Vorschriften 177 181 RM-Kerne
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siemens r10 core
Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Text: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for
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Siemens PT100 temperature sensor
Abstract: siemens a5e00 Siemens PT100 temperature sensor RTD Siemens PT100 temperature sensor din iec 60751 siemens ad2 c11 Siemens Ni1000 temperature sensor siemens thermocouple Siemens PT100 w Siemens K11 KEMA 01 ATEX 1264
Text: 2 Siemens AG 2015 Temperature Measurement 2/2 2/7 2/11 2/18 2/25 2/31 2/38 2/45 Product overview Transmitters for mounting in sensor head SITRANS TH100 two-wire system Pt100 SITRANS TH200 two-wire system universal SITRANS TH300 two-wire system universal, HART
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TH100
Pt100)
TH200
TH300
TH400
TR200
TR300
TF280
Siemens PT100 temperature sensor
siemens a5e00
Siemens PT100 temperature sensor RTD
Siemens PT100 temperature sensor din iec 60751
siemens ad2 c11
Siemens Ni1000 temperature sensor
siemens thermocouple
Siemens PT100 w
Siemens K11
KEMA 01 ATEX 1264
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Siemens PT100 temperature sensor
Abstract: TH300 conn sil2 tag 2-300 f7 1RF150
Text: 2 Siemens AG 2013 Temperature Measurement 2/2 Product overview 2/124 2/7 2/11 2/18 2/25 2/31 2/38 2/45 2/57 2/62 2/70 Transmitters for mounting in sensor head SITRANS TH100 two-wire system Pt100 SITRANS TH200 two-wire system universal SITRANS TH300 two-wire system
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TH100
Pt100)
TH200
TH300
TH400
TR200
TR300
TF280
Siemens PT100 temperature sensor
conn sil2
tag 2-300 f7
1RF150
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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ixxn200n60b3h1
Abstract: IXXN200N60B3 200n60
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN200N60B3H1
IC110
110ns
OT-227B,
E153432
IF110
50/60Hz
200N60B3
ixxn200n60b3h1
IXXN200N60B3
200n60
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ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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SOT-227B
Abstract: ixxn200n60 ixxn200n60c3h1 DS100511
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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20-60kHz
IXXN200N60C3H1
IC110
OT-227B
E153432
IF110
50/60Hz
200N60C3
1-05-12-A
SOT-227B
ixxn200n60
ixxn200n60c3h1
DS100511
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXN200N60C3H1
IC110
20-60kHz
OT-227B
E153432
IF110
200N60C3
1-05-12-A
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SMD MOSFET DRIVE 4450 8 PIN
Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
Text: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion 200W SMPS Demonstration Board
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AN-CoolMOS-06
TDA16888,
Room14J1
Room1101
SMD MOSFET DRIVE 4450 8 PIN
A7 SMD TRANSISTOR
transistor SMD R1D
6 PIN SMD IC FOR SMPS
str 6750 smps power supply circuit
11N60
transistor SMD DK
SMD a7 Transistor
smd transistor A7 s 52
transistor SMD DK rc
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SIEMENS 565-2
Abstract: B81121 X2 MKP B82524-V-A7 B85321-A-B9 B85321-A-B11 b81551-a-B9 B82302-A-A2 B85321-A-B12 B82791-A5-A5 Siemens B81121
Text: Inhaltsverzeichnis, Bestellnummern-Verzeichnis Bauformen-Übersicht Seite 5 12 Allgemeines 33 Entstörkondensatoren 53 Durchführungskondensatoren Durchführungsfilter 77 93 HF-Drosseln 105 Drosseln für Netzanwendungen 135 Drosseln und Filter für Daten- und Signalleitungen
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IXGN320N60A3
Abstract: No abstract text available
Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN320N60A3
OT-227B,
E153432
IC110
320N60A3
3-08-A
IXGN320N60A3
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Untitled
Abstract: No abstract text available
Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN320N60A3
OT-227B,
E153432
IC110
320N60A3
3-08-A
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320N60A3
Abstract: IXGN320N60A3 IXGN400N60A3
Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN320N60A3
OT-227B,
E153432
IC110
320N60A3
3-08-A
IXGN320N60A3
IXGN400N60A3
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siemens CAPACITOR B43050 gpf
Abstract: vent capacitor siemens CAPACITOR gpf SIEMENS SIKOREL 125 B41592 B41588 siemens capacitor siemens 230 gas discharge tube 90 88 pm siemens CAPACITOR B43050 SIEMENS SIKOREL B43507-B0108-M B43507 siemens capacitor
Text: Contents Overview of Terminals and Quality Grades Page 5 8 General Technical Information 11 Quality Assurance 47 Capacitors with Screw Terminals 55 Capacitors with Solder Pins 129 Snap-In Capacitors 149 3-Pin Capacitors 179 Capacitors with Soldering Star 201
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antena microondas
Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
Text: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3
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LR200
CLS300
LR250
7ML1830-1HA
7ML1830-1MC
7ML1830-1MM
antena microondas
circuito sensor capacitivo
Denso radar
sensores capacitivos
R2N P1F transistor
A5E024
bocina
transistor J1F
LUT400
SENSORES INDUCTIVOS
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SiEMENS EC 350 99
Abstract: SiEMENS PM 350 98 SIEMENS gas siemens 350 98 arrester siemens 350 SiEMENS EC 350 98 0 SIEMENS surge arrester dc spark-over voltage siemens SiEMENS EC 350 98 Q69-X81
Text: SIEMENS Gas Filled Surge Arrester EC350X Ordering code Q69-X81 DC spark-over voltage 1 2) 350 V ± 15% Impulse spark-over @ 1kV/ps for 99% of values measured < 900 V Insulation resistance @ 100 V > 10 G a Impulse discharge current wave 8/20 ps) 5 kA Alternating discharge current (50 Hz, 1s)
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EC350X
Q69-X81
EC350X
SiEMENS EC 350 99
SiEMENS PM 350 98
SIEMENS gas
siemens 350 98
arrester siemens 350
SiEMENS EC 350 98 0
SIEMENS surge arrester
dc spark-over voltage siemens
SiEMENS EC 350 98
Q69-X81
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siemens ETD44
Abstract: ETD 41 etd 35 B66358G1000X167 367 al B66364-A1016-T1 CORE N27 ETD44 ETD 34 24 V B66361G1000X167 B66367-G-X167
Text: ETD Cores Example of an assem bly set Yoke Core Coil former M ounting dim ensions of the assem bly set mm Core type Length x width x height Special features ETD 29 35,5 x 35,5 x 25,5 24,0 x 35,5 x 41,2 Coil former with horizontal magnetic axis Coil former with vertical magnetic axis
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B66397-G-X167
B66398-A1024-T1
B66398-A2000
siemens ETD44
ETD 41
etd 35
B66358G1000X167
367 al
B66364-A1016-T1
CORE N27 ETD44
ETD 34 24 V
B66361G1000X167
B66367-G-X167
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU-8/-10 HYS64(72)V8220GU-8/-10 PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
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64/72-Bit
HYS64
V4200GU-8/-10
V8220GU-8/-10
PC100
4Mx72
V4200/8220G
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