SIEMENS GAAS FET Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

24 GHz Microwave Doppler Radar Speed Sensor

Abstract: microwave motion sensors microwave RADAR motion sensors motion sensor doppler 24 GHz Microwave Sensor motion DOPPLER siemens speed sensor speed sensors Siemens motion sensor based on doppler effect automatic door opening sensor
Contextual Info: SIEMENS 3 Motion Sensors 3.1 Functional Description Motion Sensors The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded

012E3

Contextual Info: SIEMENS CF 750 GaAs MMIC • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz Mixer and amplifier applications in handheld equipment Low power consumption, 2mA operating current typ. Operating voltage range: 3 to 6V Ion-implanted planar structure

CF739

Abstract: 7S66 1 928 300 599 marking MS "marking ms"
Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

transistor marking 7D

Abstract: marking MS 7d marking "marking ms"
Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

cfy 19 siemens

Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Contextual Info: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

CFY10

Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Contextual Info: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

3tb 50 siemens

Contextual Info: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393

siemens gaas fet

Abstract: TMS 1600 marking S221
Contextual Info: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,

CFY30

Abstract: CFY 18
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

SIEMENS 230 92 O

Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

Contextual Info: SIEMENS CFY 30 GaAs FET • • • • • • • Low noise Fmin= 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation

MMIC marking CODE cf

Abstract: ma com 4 pin mmic A7560
Contextual Info: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V

siemens gaas fet

Abstract: E7916 pinFET marking c6 cerec
Contextual Info: SIEMENS GaAs FET CFY 25-20 E7916 Preliminary Data • • • • • Low noise High gain Low gate-leakage current All gold metallization For high-speed fibre optic receivers and PIN-FET modules up to 2.4 Gbit/sec VC E05255 ESD: Electrostatic discharge sensitive device, observe handling precautions!

motion sensor doppler

Abstract: microwave RADAR motion sensors doppler sensor microwave motion sensors 24 GHz Microwave Doppler Radar Speed Sensor motion DOPPLER motion sensor doppler effect motion sensor based on doppler effect automatic door opening sensor microwave motion sensor
Contextual Info: Motion Sensors 3 Motion Sensors 3.1 Functional Description The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded

cfy 19 siemens

Contextual Info: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!

Siemens A 1458

Abstract: FET marking code 365
Contextual Info: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,

CF739 R

Abstract: CF739 siemens gaas fet
Contextual Info: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain

CLY10

Contextual Info: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163

5N521

Abstract: CFY30
Contextual Info: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization