SIEMENS RWC 62 Search Results

Contextual Info: SIEMENS HYM 721000GS-60/-70 HYM 721010GS-60/-70 1M X 72-Bit Dynamic RAM Module ECC - Module A dvanced Inform ation • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

Contextual Info: SIEMENS 256K X 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information Power Supply: • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • EDO - Hyper Page Mode • Performance: HYB 514265BJ-400

smd marking YB

Abstract: marking wl3 smd FAA 514265
Contextual Info: SIEMENS 256K X 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information Power Supply: • 262 144 words by 16-bit organization HYB 514265BJ-400 • 0 to 70 °C operating temperature HYB 514265BJ-40 • EDO - Hyper Page Mode

5117400B

Abstract: 511740
Contextual Info: 8M x 40-Bit Dynamic RAM Module Low Power with Self Refresh HYM 408020SL-60 Preliminary Information • 72-Pin JEDEC standard Single-ln-Line Memory Module • 2 bank 8M x 40 organisation • Optimized for use in ECC applications • Fast Page Mode operation

Contextual Info: SIEMENS 256k X 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60 Advanced information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • • • RAS access time: 50 ns -50 version 55 ns (-55 version) 60 ns (-60 version)

Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 514405BJ/BJL-50/-60/-70 Preliminary Information • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature • Hyper Page Mode - EDO • Performance: ¿RAC RAS access time

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 3117805BSJ(L)-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70 ns Jrac RAS access time

Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM HYB 514400BJ-50/-60 Advanced Inform ation • 1 048 576 words by 4-bit organization • 0 to 70 °C operating tem perature • Fast Page Mode Operation • Performance: -50 -60 ^RAC RAS access time 50 60 ns fCAC CAS access tim e

Contextual Info: SIEMENS 8M x 72-Bit EDO- DRAM Module ECC - Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin buffered DIMM Module • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 8 M x 72 organisation

DQ712

Abstract: 511000BJ-70
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version

Contextual Info: SIEMENS 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8020GS-50/-60 HYM 72V8030GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 8 M x 72 organisation • Optimized for ECC applications

5116400AJ

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time

12 AX 7 WA / ECC 83

Contextual Info: SIEMENS 4M x 72-Bit EDO-DRAM Module ECC-Module 168 pin buffered DIMM Module HYM 72V4005GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, buffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 4M x 72 organization • Optimized for ECC applications

Contextual Info: SIEMENS 1 M X 1 -Bit Dynamic RAM HYB 511 000B-60/-70/-80 HYB 511000BL-60/-70 Advanced Inform ation • • 1 048 576 w ords by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 5 1 1000B/BL-60 70 ns access time 130 ns cycle tim e (HYB 5 1 1000B/BL-70)

Contextual Info: SIEMENS 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8040GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 2 bank 8 M x 72 organisation • Optimized for ECC applications

Contextual Info: SIEMENS 512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • 512 288 words by 8-bit organization Low power dissipation max. 605 mW active -60 version max. 550 mW active (-70 version) max. 468 mW active (-80 version) • 0 to 70 "C operating temperature

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYß 3165400AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page M ode operation •

Contextual Info: SIEMENS 4M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle tim e (-50 version) 60 ns access tim e

Contextual Info: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications

Contextual Info: SIEMENS 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8020GS-50/-60 HYM 72V8030GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 8 M x 72 organisation •

siemens EM 235 cn

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information VBB • 262 144 words by 4-bit organization • Single + 5 V ± 10 % supply with a built-in generator Output unlatched at cycle end allows two_

SIEMENS 3 TB 40 12 - 0A

Abstract: SIEMENS 3 TB 40 17 - 0A SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0B Q67100-Q2182
Contextual Info: SIEMENS 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module HYM64V2005GU-50/-60 HYM72V2005GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module for P C main memory applications

Contextual Info: SIEM ENS 3.3 V 4M x 64-Bit EDO-DRAM Module 3.3 V 4M x 72-Bit EDO-DRAM Module 168 pin unbuffered DIMM Module with serial presence detect HYM 64V4045GU-50/-60 HYM 72V4045GU-50/-60 Advanced Information • 168 Pin JEDEC Standard, unbuffered 8 Byte Dual In-Line Memory Module