SIEMENS TWT Search Results

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

5Q22

Contextual Info: SIEMENS C M P N T S t OPTO SIEMENS • M4E D • öE3b32b GQQ4Ö2M S M S I E X MSD231OTXV/TXVB YELLOW MSD2311TXV/TXVB h igh EFF. RED MSD2312TXV/TXVB HIGH EFF. GREEN MSD2313TXV/TXVB re d .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

siemens rack

Abstract: SIEMENS MICROWAVE RADIO 15-pin D type connector 500 watt RF amplifier GHz microwave transistor siemens 15-pin 19-inch 8587 if n-type connector n-type connector
Contextual Info: Model SM7785-43A 7.725-8.500 GHz Linear Power Amplifier FOR TWT APPLICATIONS This solid state GaAs Telcom Amplifier is an exact “drop-in” for the Siemens RW290 TWT Upper Rack of Alcatel MDR4X08 Microwave Radio . This compact amplifier can deliver 20 Watts at its 1 dB

RW2135

Abstract: siemens TWT stealth microwave SM1011-43 SIEMENS MICROWAVE RADIO stealth twt
Contextual Info: Specification Sheet for SM1011-43 SSPA This solid state GaAs Telcom Amplifier is an exact "drop-in" for the Siemens/Thomson RW2135 TWT. In Alcatel 4000 Radios, the amplifier will deliver 43 dBm at P1dB with an output third order intercept point of 53 dBm up

RW89

Abstract: siemens TWT SM6471-41
Contextual Info: Specification Sheet for SM6471-41 SSPA This solid state GaAs Telcom Amplifier is an exact "drop-in" for the Siemens RW89 TWT. In Collins/Alcatel MDR-6 and Harris Farinon DR-6 Radios, the amplifier will deliver 41 dBm power with an intercept point of 51 dBm.

harris farinon

Abstract: RW289 SM5964 SM5964-43 siemens TWT connectors alcatel
Contextual Info: Specification Sheet for SM5964-43 SSPA This solid state GaAs Telcom Amplifier is an exact "drop-in" for the Siemens RW89D/RW289 TWT. For FM and 16/64 QAM modulated radio links manufactured by Alcatel and Harris/Farinon, this compact amplifier can deliver 20 Watts at its 1 dB

SM7177-41

Abstract: TO-56 heatsink siemens TWT
Contextual Info: Specification Sheet for SM7177-41 SSPA This solid state GaAs Telcom Amplifier is an exact "drop-in" for the Siemens RW90D TWT. For FM and 8 PSK/16 QAM modulated radio links manufactured by Collins and Farinon, this compact amplifier can deliver 12 Watts at its 1 dB compression point.

SM7785-41

Abstract: harris farinon
Contextual Info: Specification Sheet for SM7785-41 SSPA This solid state GaAs Telcom Amplifier is an exact "drop-in" for the Siemens RW90D TWT. For FM and 8 PSK/16 QAM modulated radio links manufactured by Alcatel and Farinon/Harris, this compact amplifier can deliver 12 Watts at its 1 dB compression point.

RW289

Abstract: DR6-135 siemens TWT SM5964-45 stealth twt DR-6-135
Contextual Info: Specification Sheet for SM5964-45 SSPA This solid state GaAs Telcom Amplifier is an exact "drop-in" for the Siemens RW289 TWT. For 64 QAM modulated radio links such as the AT&T DR6-135, this compact amplifier can deliver 38 dBm, error free. The SM5964-45 is a complete kit consisting of the amplifier, power supply, cable and

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 3117805BSJ(L)-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70 ns Jrac RAS access time

bt 33 f

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: SIEMENS 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 (4k & 8k Refresh, EDO-Version) HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

SMD MARKING CODE RAC

Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 514405BJ/BJL-50/-60/-70 Preliminary Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO • Performance: -50 -60 -70 fRAC RAS access time

Contextual Info: SIEMENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: SIEMENS 8M X 8-Bit Dynamic RAM 4k & 8k-Refresh hYB 3164800AJ/AT(L) -40/-50/-60 HYB 3165800AJ/AT(L) -40/-50/-60 Preliminary Information • 8 388 608 words by 8-bit organization • 0 to 70 ’ C operating temperature • Fast Page Mode operation • Performance:

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 311 7800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC CAS access time

Contextual Info: SIEMENS 3.3V 4M X 4-Bit Dynamic RAM 2k & 4k-Refresh HYB 311 6400BJ/BT L -50/-60/-70 HYB 3117400BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 ^RAC RAS access time

5117400BJ-50

Abstract: wd71
Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: • • • • • • • • -50 -60 -70 ^RAC RAS access time 50 60 70 ns ÍCAC

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC RAS access time -50 -60 -70 50 60 70 ns ns fcAC CAS access time 13 15 20 ^AA

Contextual Info: SIEMENS 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version

Marking Code SMD zc

Contextual Info: SIEMENS 8M X 8-Bit Dynamic RAM 4k & 8k Refresh, EDO-version hYB 3164805J/T(L) -50/-60 h YB 3165805J/T(L) -50/-60 Preliminary Information • 8 388 608 words by 8-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: SIEMENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50 -60 -70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature Low power dissipation max. 660 mW active -50 version