SIGE SEMICONDUCTOR Search Results

UHV 806

Abstract: metal detector plans seven wonders OC 140 germanium transistor microwaves Amplifier Research metal detector door bell chime receiver SiGe POWER TRANSISTOR frankfurt HFA3861
Contextual Info: SPECIAL REPORT SiGe Advances SiGe Technology Makes Practical Advances This novel device technology is making major strides in RF and digital integrated circuits for highfrequency, high-speed communications systems. JACK BROWNE Publisher/Editor ILICON germanium SiGe is a semiconductor technology made for

2SC5800

Abstract: NESG2046M33
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor

NESG2046M33

Abstract: NESG2107M33
Contextual Info: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor

Contextual Info: TST0950 SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency applications up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommunication applications, due to its lower costs and excellent

TST0950

Contextual Info: TST0950 SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency applications up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommunication applications, due to its lower costs and excellent

2SC5800

Abstract: NESG2046M33 NEC JAPAN IC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor

transistor nec 8772

Abstract: nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 NESG2031M05 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E
Contextual Info: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:

transistor nec 8772

Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
Contextual Info: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:

MAM427

Abstract: 238-104 BGA2003 BGU2003 MMIC marking code 132 MGS539
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGU2003 SiGe MMIC amplifier Preliminary specification 2002 May 17 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 PINNING FEATURES • Low current PIN DESCRIPTION • Very high power gain

Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure

Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure

10GHz oscillator

Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure

4 pin dual-emitter

Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure

4 pin dual-emitter

Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure

BFU510

Abstract: SiGe POWER TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain

ST0950

Contextual Info: Temic TST0950 S e mi c o n d u c t o r s SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency appli­ cations up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommu­

Contextual Info: Tem ic TST0950 S e m i c o n d u c t o r s SiGe Low-Noise Amplifier LNA for GSM Description SiGe is the newest technology for high frequency appli­ cations up to 5 GHz. In this frequency range, SiGe will substitute expensive GaAs components in telecommu­

SiGe 2577

Abstract: NEC NESG2030M04 nec 2401 wireless communication NESG2030M04 2SC5761 NESG2030M04-A NESG2030M04-T2 NESG2030M04-T2-A S21E nec LE 737
Contextual Info: NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm

Contextual Info: T0930 SiGe-Power Amplifier for CW Applications Description The pager amplifier is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in 900 MHz Two-way

GSM 900, 1800, 1900 max power diagram

Abstract: TST0911 TST0911-TSQ TST0911-TSS gsm amplifier 1900 mhz rf power amplifier circuit diagram
Contextual Info: TST0911 Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based

Contextual Info: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM

Contextual Info: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM

atmel 935

Abstract: block diagram of wireless watt meter
Contextual Info: T0931 SiGe Power Amplifier for CW Applications Description The T0931 is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter

Contextual Info: T0931 SiGe Power Amplifier for CW Applications Description The T0931 is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter