SILAS Search Results

Contextual Info: FCI Semiconductor A4, PR4 & SOZA Preliminary Data Sheet 1.0,3.0 and 6.0 Amp SILICON RECTIFIER CELLS Mechanical Dimensions A4, PR4 & SOZA Description BASIC CELL STRUCTURE / COPPER SILASTIC/ PASSIVANT / SILICON DIE \ COPPER SOLDER A4 PR4 SOZA Features O LOW COST

6A05G

Abstract: 6A05S 6A10G 6A10S
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER 6A05G THRU 6A10G VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Ampere FEATURES • • • • • R-6 Glass passivated chip junction Low reverse leakage Low forward voltage High forward surge current capability

1N539

Abstract: diode in 5392 1N5391 1N5399
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT 1N5391 THRU 1N5399 DO-15 FEATURES • • • • • Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:

diode by127

Abstract: EQUIVALENT OF BY127 BY127 datasheets diode by127 equivalent components of diode by127 by133 BY127 Equivalent equivalent of diode BY127 symbol of BY127 diode BY127 equivalent
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT BY127 THRU BY133 DO-41 FEATURES • • • • • Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:

Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER 1G1 THRU 1G7 VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES • • • • • Glass passivated chip junction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:

Contextual Info: Application Note 1679 Author: Silas Lin ISL9111H30/33/50/ADJZEVAL1Z Evaluation Board User Guide Evaluation Board Features TABLE 2. DESCRIPTION OF JUMPERS • ISL9111H30/33/50/ADJZEVAL1Z is a low input voltage, high efficiency boost regulator with fixed 3.0/3.3/5.0V and

Contextual Info: 1. REVISIONS THIRD ANGLE PROJ. NOTES: REV DESCRIPTION - MATERIALS OF CONSTRUCTION: BODY = BRASS, NICKEL PLATED NUTS = BRASS, NICKEL PLATED CONTACT = BRASS, SILVER PLATED INSULATORS = POLYSTYRENE GASKETS = SILASTIC 6526 RETAINING RING = PHOSPHOR BRONZE, NICKEL PLATED

MIL-R-39005

Abstract: MIL-R-93 rbr56 SP42 HR10 RB56 RBR52
Contextual Info: am AXIAL LEAD PRECISION WIREWOUND RESISTORS HR, VA, SP, 7000, 8000 s e r ie s r— Non-stress encapsulation MIL-R-93 RB & MIL-R-39005 (RBR) & COMMERCIAL STYLES Automated, precision windings, protected by silastic undercoat -W elded terminations 0.1 ohm to 12 meg ohms

Contextual Info: REVISIONS MATERIALS: 1. 2. 3. 4. 5. INSULATOR = VIRGIN WHITE TEFLON PER ASTM D 1710, GRADE 1, TYPE I, CLASS ” B ” . CONTACT Sc WIRE ADAPTOR = BERYLLIUM COPPER PER ASTM B 196, ALLOY C 173 0 0 , TEMPER TD04. GASKET = SILICONE RUBBER PER 4 5 - 5 5 DUROMETER DOW CORNING SILASTIC 250.

RL252

Abstract: RL253 RL254 RL255 RL257 RL251
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT RL251 THRU RL257 R-3 FEATURES • • • • • 50 to 1000 Volts 2.5 Amperes Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package C25 Package Weight mg 370 Product Group Type No. C25A – C25K Component Die Material Solder Alloy Slug Copper Alloy Plating Silver Passivation Silastic Tolerance MSL Rating

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package C70 Package Weight mg 790 Product Group Type No. C70A – C70K Component Die Material Solder Alloy Slug Copper Alloy Plating Silver Passivation Silastic Tolerance MSL Rating

LT 420

Abstract: RC15S01 RC15S10
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LT RC15S01 THRU RC15S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA

Contextual Info: QJBC AXIAL LEAD PRECISION WIREWOUND RESISTORS HR, VA, SP, 7000, 8000 s e r ie s — Non-stress encapsulation MIL-R-93 RB & MIL-R-39005 (RBR) & COMMERCIAL STYLES windings, protected by silastic undercoat I- Welded terminations • • • • • •

1N4007 MIC

Abstract: 1N4002 diode download datasheet datasheet d 1n4007 Diode 1N4007 transistor datasheet 1N4001 1N4002 1N4003 1N4004 1N4007 1N4007+MIC
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT 1N4001 THRU 1N4007 DO-41 FEATURES • • • • • Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:

IN4007g

Abstract: IN4001 1N4001G 1N4007G 4002G 4005G IN4007
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER 1N4001G THRU 1N4007G VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES • • • • • DO-41 Glass passivated chip junction Low forward voltage drop Low reverse leakage High forward surge current capability

1N5408

Abstract: 1N5404 1N5400 1N5401 1N5402
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT 1N5400 THRU 1N5408 DO-27 FEATURES • • • • • Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed:

6A4S

Abstract: 6A6S 6A10S 6A05S
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT 6A05S THRU 6A10S 50 to 1000 Volts 1.0 Ampere R-6S FEATURES • • • • Low coat construction Low forward voltage High forward surge current capability High temperature soldering guaranteed:

1n54008

Abstract: IN5400G 1N54008G in5407g 1N5400G 1N5408G 5402G 5406G in5406g IN5404G
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER 1N5400G THRU 1N5408G VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere FEATURES • • • • • DO-27 Glass passivated chip junction Low forward voltage drop Low reverse leakage High forward surge current capability

RC10S01

Abstract: RC10S10
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC10S01 THRU RC10S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA

SOZA

Contextual Info: FCI Semiconductor A4, PR4 & SOZA Preliminary Data Sheet 1.0,3.0 and 6.0 Amp SILICON RECTIFIER CELLS M echanical Dim ensions Description A4, PR4 & SOZA A4, PR4 & SOZA BASIC CELL STRUCTURE /• SILASTIC/ PASSIVANT COPPER SILICON DIE SOLDER Features O LOW COST

RC30S01

Abstract: RC30S10
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01 THRU RC30S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA

shallcross hr11

Contextual Info: AXIAL LEAD PRECISION WIREWOUND RESISTORS HR, VA, SP, 7000, 8000 SERIES Non-stress encapsulation MIL-R-93 RB & MIL-R-39005 (RBR) & COMMERCIAL STYLES • • • • • • Automated, precision windings, protected by silastic undercoat Welded terminations

diode 1600 rectifier

Abstract: Diode EM513 EM513 EM516 EM518
Contextual Info: AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER VOLTAGE RANGE CURRENT EM513 THRU EM518 DO-41 FEATURES • • • • • Low coat construction Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed: