SILICON CARBIDE Search Results

SILICON CARBIDE Result Highlights (5)

Part	Manufacturer	Description
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
P104	Coilcraft Inc	Silicon Controlled Rectifier,
5962-8757701RA	Renesas Electronics Corporation	Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon
HXT45430-DNU	Renesas Electronics Corporation	112Gb/s PAM4 Silicon Photonic Modulator Driver

SILICON CARBIDE Price and Stock

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ROHM Semiconductor SCT3080KW7TL SiC MOSFETs TO263 1.2KV 30A N-CH SIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SCT3080KW7TL	Reel	1,000		1,000	1 - 10 - 100 - 1000 $11.33 10000 $11.33	Buy Now
ROHM Semiconductor SCT3030AW7TL SiC MOSFETs TO263 650V 70A N-CH SIC
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TTI	SCT3030AW7TL	Reel	1,000		1,000	1 - 10 - 100 - 1000 $24.42 10000 $24.42	Buy Now
ROHM Semiconductor SCS205KGC17 SiC Schottky Diodes SILICON CARBIDE
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TTI	SCS205KGC17	Tube	450		50	1 - 10 - 100 $3.83 1000 $2.88 10000 $2.69	Buy Now
ROHM Semiconductor SCT4018KRC15 SiC MOSFETs TO247 1.2KV 81A N-CH SIC
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TTI	SCT4018KRC15	Tube	450		30	1 - 10 - 100 $28.43 1000 $28.43 10000 $28.43	Buy Now
ROHM Semiconductor SCT4026DEC11 SiC MOSFETs TO247 750V 56A N-CH SIC
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TTI	SCT4026DEC11	Tube	450		50	1 - 10 - 100 $18.17 1000 $18.17 10000 $18.17	Buy Now

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SILICON CARBIDE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SCS120AGC Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have	Original	PDF	CNA110004 SCS120AGC SCS110AGC SCS108AGC SCS112AGC 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
Infineon diffusion solder Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices	Original	PDF	600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
W4PRE8F-0200 Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00 Text: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1	Original	PDF
W6NRD0X-0000 Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000 Text: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for	Original	PDF
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0 Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output	Original	PDF	RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
Untitled Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode	Original	PDF	SPM1007
IGBT 50 amp 1000 volt Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode	Original	PDF
ultrafast igbt Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching	Original	PDF	of169 1200-volt CPWR-AN03, ultrafast igbt IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
SDP20S120D Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature	Original	PDF	SDP20S120D O-247 SDP20S120D C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
L4821A Abstract: SPD10S30 A101 SIDC03D30SIC2 Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior	Original	PDF	SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2
Untitled Abstract: No abstract text available Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior	Original	PDF	SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A,
L4821A Abstract: No abstract text available Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior	Original	PDF	SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A
Untitled Abstract: No abstract text available Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior	Original	PDF	SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A,
SEMISOUTH Abstract: SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide Text: Silicon Carbide PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage	Original	PDF	SDP30S120 SEMISOUTH SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide

SCHOTTKY 4A 600V Abstract: DIODE 200A 600V schottky Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching	Original	PDF	SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, SCHOTTKY 4A 600V DIODE 200A 600V schottky
Untitled Abstract: No abstract text available Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching	Original	PDF	SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,
Untitled Abstract: No abstract text available Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching	Original	PDF	SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,
L4804A Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching	Original	PDF	SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
diode schottky 600v Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454 Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior	Original	PDF	SIDC11D60SIC3 Q67050-A4161A104 diode schottky 600v 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
SEMISOUTH Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current	Original	PDF	SDP10S120D O-247 SEMISOUTH SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
SDP10S30 Abstract: SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS Text: SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery	Original	PDF	SIDC24D30SIC3 Q67050-A4163A103 SDP10S30 SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS
SPD06S60 Abstract: diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454 Text: SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior	Original	PDF	SIDC19D60SIC3 Q67050-A4162A104 SPD06S60 diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454
DIODE 200A 600V schottky Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching	Original	PDF	SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
600 V power Schottky silicon carbide diode Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454 Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior	Original	PDF	SIDC05D60SIC3 Q67050-A4201A103 600 V power Schottky silicon carbide diode Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454

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SILICON CARBIDE Search Results

SILICON CARBIDE Result Highlights (5)

SILICON CARBIDE Price and Stock

ROHM Semiconductor SCT3080KW7TL

ROHM Semiconductor SCT3030AW7TL

ROHM Semiconductor SCS205KGC17

ROHM Semiconductor SCT4018KRC15

ROHM Semiconductor SCT4026DEC11

SILICON CARBIDE Datasheets Context Search

SCS120AGC

Infineon diffusion solder

W4PRE8F-0200

W6NRD0X-0000

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

Untitled

IGBT 50 amp 1000 volt

ultrafast igbt

SDP20S120D

L4821A

Untitled

L4821A

Untitled

SEMISOUTH

SCHOTTKY 4A 600V

Untitled

Untitled

L4804A

diode schottky 600v

SEMISOUTH

SDP10S30

SPD06S60

DIODE 200A 600V schottky

600 V power Schottky silicon carbide diode