SCS120AGC
Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have
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CNA110004
SCS120AGC
SCS110AGC
SCS108AGC
SCS112AGC
600 V power Schottky silicon carbide diode
silicon carbide
Switching Characteristics of Fast Recovery Diodes
ultra low forward voltage schottky diode
ROHM Product Guide Product Catalog
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Infineon diffusion solder
Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices
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600/650V
SDB06S60
IDD02SG60C
IDD03SG60C
IDD04SG60C
IDD05SG60C
IDD06SG60C
IDD08SG60C
IDD09SG60C
IDD10SG60C
Infineon diffusion solder
Infineon power diffusion process
300v dc 230v ac inverter
r2l diode
igbt 400V 5A
IDV06S60C
diode 400V 4A
IDW16G65C5
idv02s60c
schottky 400v
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode
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SPM1007
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SDP20S120D
Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature
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SDP20S120D
O-247
SDP20S120D
C4692
SEMISOUTH
sdp20s120
solar inverter
SemiSouth Laboratories
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L4821A
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
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SIDC03D30SIC2
SIDC03D30SIC2
32mm2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
L4821A
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L4821A
Abstract: SPD10S30 A101 SIDC03D30SIC2
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
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SIDC03D30SIC2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
L4821A
SPD10S30
A101
SIDC03D30SIC2
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
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SIDC03D30SIC2
SIDC03D30SIC2
32mm2
Q67050-A4163A1
Q67050-A4163A2
L4821A,
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SEMISOUTH
Abstract: SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide
Text: Silicon Carbide PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
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SDP30S120
SEMISOUTH
SDP30S120
SDP30s
SDP30S120 Carbide Schottky Diode
sine wave ups SCHEMATIC
induction heating schematic
solar inverter
SemiSouth Laboratories
silicon carbide
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
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SIDC03D30SIC2
32mm2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC02D60SIC2
Q67050-A4162sawn
Q67050-A4162unsawn
L4814A,
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC02D60SIC2
SIDC02D60SIC2
Q67050-A4162sawn
Q67050-A4162unsawn
L4814A,
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L4804A
Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC01D60SIC2
Q67050-A4161sawn
Q67050-A4161unsawn
L4804A,
L4804A
SDP04S60
SIDC01D60SIC2
SCHOTTKY 4A 600V
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diode schottky 600v
Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC11D60SIC3
Q67050-A4161A104
diode schottky 600v
600V,4A DIODE
Schottky diode Die
SDP04S60
SIDC11D60SIC3
DSA0037454
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SEMISOUTH
Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDP10S120D
O-247
SEMISOUTH
SDP10S120D
C2652
induction heating schematic
silicon carbide
"silicon carbide" device
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SPD06S60
Abstract: diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454
Text: SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC19D60SIC3
Q67050-A4162A104
SPD06S60
diode schottky 600v
SIDC19D60SIC3
DIODE 200A 600V schottky
DSA0037454
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DIODE 200A 600V schottky
Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
Q67050-A4201A101
Q67050-A4201A102
L4834A,
DIODE 200A 600V schottky
SWITCHING DIODE 600V 2A
SDP02S60
SDP02s
L4834A
SIDC00D60SIC2
600 V power Schottky silicon carbide diode
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600 V power Schottky silicon carbide diode
Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC05D60SIC3
Q67050-A4201A103
600 V power Schottky silicon carbide diode
Schottky diode Die
SDT02S60
SIDC05D60SIC3
DSA0037454
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SDP02S60
Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
SIDC00D60SIC2
Q67050-A4201sawn
Q67050-A4201unsawn
L4834A,
SDP02S60
SWITCHING DIODE 600V 2A
A102 diode
sdp02s
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SPD06S60
Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC02D60SIC2
Q67050-A4162sawn
Q67050-A4162unsawn
L4814A,
SPD06S60
diode schottky 600v infineon
SIDC02D60SIC2
Carbide Schottky Diode
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SDT05S60
Abstract: SIDC16D60SIC3 C-19200 DSA0037454
Text: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC16D60SIC3
Q67050-A4271A101
SDT05S60
SIDC16D60SIC3
C-19200
DSA0037454
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SCHOTTKY 4A 600V
Abstract: DIODE 200A 600V schottky
Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC01D60SIC2
SIDC01D60SIC2
Q67050-A4161sawn
Q67050-A4161unsawn
L4804A,
SCHOTTKY 4A 600V
DIODE 200A 600V schottky
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SDT08S60
Abstract: SIDC24D60SIC3 DSA0037454
Text: SIDC24D60SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery
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SIDC24D60SIC3
Q67050-A4281A101
SDT08S60
SIDC24D60SIC3
DSA0037454
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SEMISOUTH
Abstract: SDP60S120D SemiSouth Laboratories sdp60s
Text: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDP60S120D
O-247
SDP60S120D
SEMISOUTH
SemiSouth Laboratories
sdp60s
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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L4804A,
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