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    SILICON CARBIDE DIODE Search Results

    SILICON CARBIDE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON CARBIDE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCS120AGC

    Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
    Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have


    Original     		PDF CNA110004 SCS120AGC SCS110AGC SCS108AGC SCS112AGC 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog

    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


    Original     		PDF 600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode


    Original     		PDF SPM1007

    SDP20S120D

    Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
    Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature


    Original     		PDF SDP20S120D O-247 SDP20S120D C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories

    L4821A

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A

    L4821A

    Abstract: SPD10S30 A101 SIDC03D30SIC2
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A,

    SEMISOUTH

    Abstract: SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide
    Text: Silicon Carbide PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage


    Original     		PDF SDP30S120 SEMISOUTH SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,

    L4804A

    Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V

    diode schottky 600v

    Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
    Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		PDF SIDC11D60SIC3 Q67050-A4161A104 diode schottky 600v 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454

    SEMISOUTH

    Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
    Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current


    Original     		PDF SDP10S120D O-247 SEMISOUTH SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device

    SPD06S60

    Abstract: diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454
    Text: SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		PDF SIDC19D60SIC3 Q67050-A4162A104 SPD06S60 diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454

    DIODE 200A 600V schottky

    Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
    Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode

    600 V power Schottky silicon carbide diode

    Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
    Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		PDF SIDC05D60SIC3 Q67050-A4201A103 600 V power Schottky silicon carbide diode Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454

    SDP02S60

    Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
    Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC00D60SIC2 SIDC00D60SIC2 Q67050-A4201sawn Q67050-A4201unsawn L4834A, SDP02S60 SWITCHING DIODE 600V 2A A102 diode sdp02s

    SPD06S60

    Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, SPD06S60 diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode

    SDT05S60

    Abstract: SIDC16D60SIC3 C-19200 DSA0037454
    Text: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		PDF SIDC16D60SIC3 Q67050-A4271A101 SDT05S60 SIDC16D60SIC3 C-19200 DSA0037454

    SCHOTTKY 4A 600V

    Abstract: DIODE 200A 600V schottky
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, SCHOTTKY 4A 600V DIODE 200A 600V schottky

    SDT08S60

    Abstract: SIDC24D60SIC3 DSA0037454
    Text: SIDC24D60SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery


    Original     		PDF SIDC24D60SIC3 Q67050-A4281A101 SDT08S60 SIDC24D60SIC3 DSA0037454

    SEMISOUTH

    Abstract: SDP60S120D SemiSouth Laboratories sdp60s
    Text: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current


    Original     		PDF SDP60S120D O-247 SDP60S120D SEMISOUTH SemiSouth Laboratories sdp60s

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A,