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    SILICON DIODE BYW 60 Search Results

    SILICON DIODE BYW 60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DIODE BYW 60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BYW 64 bridge rectifier

    Abstract: diode BYW 64
    Contextual Info: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.


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    DO-41 UL94V-0 R0D1RS14 000017S BYW 64 bridge rectifier diode BYW 64 PDF

    N5625

    Abstract: diodes byw N5624 diodes byw 88 600 r
    Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:


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    BYW82. BYW86 N5625 D-74025 24-Jun-98 diodes byw N5624 diodes byw 88 600 r PDF

    IN5059

    Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
    Contextual Info: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:


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    BYW52. BYW56 IN5059 BYW53 1N5060 BYW55 1N5062 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent PDF

    N5062

    Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
    Contextual Info: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:


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    BYW52. BYW56 N5059 N5060 N5061 N5062 D-74025 24-Jun-98 N5062 Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r PDF

    diode BYW 200

    Abstract: diode BYW 60
    Contextual Info: Te m ic BYW72.BYW76 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and sw itch for exam ple for T V -lin e


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    BYW72. BYW76 diode BYW 200 diode BYW 60 PDF

    silicon diode byw 60

    Abstract: byw 36 v diode BYW 60
    Contextual Info: Te m ic BYW32.BYW36 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • Glass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and switch for exam ple for T V -lin e


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    BYW32. BYW36 silicon diode byw 60 byw 36 v diode BYW 60 PDF

    diodes byw

    Contextual Info: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:


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    BYW82. BYW86 1N5624 1N5625 12-Dec-94 diodes byw PDF

    diode BYW 64

    Contextual Info: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:


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    BYW82. BYW86 1N5625 diode BYW 64 PDF

    fast diode byw 98 200

    Abstract: silicon diode byw 60
    Contextual Info: BYW72.BYW76 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications 94 9588 Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­


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    BYW72. BYW76 D-74025 24-Jun-98 fast diode byw 98 200 silicon diode byw 60 PDF

    diode BYW 91

    Abstract: byw 98 100 fast diode byw 98 200 fast diode byw 98 100
    Contextual Info: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­


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    BYW32. BYW36 D-74025 24-Jun-98 diode BYW 91 byw 98 100 fast diode byw 98 200 fast diode byw 98 100 PDF

    IN4007 diode

    Abstract: PQ2620 diac ht32 tdk pq2625 n4007 diode IN4007 silicon diode IN4007 RECTIFIER DIODE 6.8j 100v TDK PCU LN4007 diode
    Contextual Info: SG3561A , S IL IC O N E E N E ^ L POWER FACTOR CONTROLLER LIN EA R IN T EG R A T ED C IR C U IT S D ESC R IP TIO N FEA TU RES This monolithic integrated circuit provides all the necessary functions for designing an active power factor correction circuit in conjunction with off-line


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    SG3561A SG3561 PQ2620 047nF, IRFBE42, 1N4007, 1N4935, 10OOpF, MR856, fi253flfl0 IN4007 diode diac ht32 tdk pq2625 n4007 diode IN4007 silicon diode IN4007 RECTIFIER DIODE 6.8j 100v TDK PCU LN4007 diode PDF

    CTX12S

    Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
    Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT


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    SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent PDF

    BY228 equivalent

    Abstract: BYD14G RU20A cross reference
    Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    vSE-db0112-1009 BY228 equivalent BYD14G RU20A cross reference PDF

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a PDF