SILICON MMIC WIDE-BAND AMPLIFIER Search Results

nec 1678

Abstract: UPC1678G PC1678G top marking UPC1678G
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC1678G 2.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON MMIC DESCRIPTION The /xPC1678G is a silicon monolithic integrated circuit especially designed as a wide band amplifier covering HF through UHF band with middle output power.

MA2820

Abstract: NEC application note No.10964ej2v0an00 uPC1688 10964EJ2V0AN00 marking C1C VP15-00-3 ray 40
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1688G 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC DESCRIPTION The µPC1688G is a silicon monolithic integrated circuit especially designed as a flat gain and wide band amplifier covering HF through UHF band.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1678G 2.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON MMIC DESCRIPTION The ¿¡PC1678G is a silicon monolithic integrated circuit especially designed as a wide band amplifier covering HF through UHF band with middle output power.

wideband mixer

Contextual Info: SILICON MMIC SEC UPC1687B/G PRELIMINARY Wide-Band Mixer/Oscillator/IF Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPC1687B • WIDE-BAND OPERATION: DC to 890 MHz • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

NEC 2525

Abstract: 688g 10964EJ2V0AN00
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿uPC1688G 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC DESCRIPTION The /xPC1688G is a silicon m onolithic integrated circuit especially designed as a flat gain and w ide band am plifier covering HF through UHF band.

diode 1GHz

Abstract: SMA3001
Contextual Info: SMA3001 Silicon Wide-band Amplifier MMIC TENTATIVE Features and Applications • 20dB Small Signal Gain • Wide -band Operation 0.01 to 2GHz • Low Noise Figure (2.9dB:1GHz) • Small Package Outline (1.25mmx2.0mm) • Single 3V Power Supply Absolute Maximum Ratings/Ta=25°C

MMIC cross

Contextual Info: SILICON MMIC NEC UPC1685B/G PRELIMINARY Wide-Band Mixer/Oscillator MMIC FE A TU R E S P H Y S IC A L D IM E N S IO N S Units in mm • WIDE-BAND OPERATION: DC to 890 MHz UPC1685B • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

Contextual Info: UPC2721GR UPC2721GV UPC2722GR UPC2722GV SILICON MMIC L BAND DOWNCONVERTER FEATURES_ INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION UP TO 2.5 GHz • INTERNAL BALANCED AMPLIFIER FOR VCO • SINGLE ENDED PUSH-PULL IF AMPLIFIER 8 RF ini

upc 1185 h

Abstract: uPC 1185 2709T UPC 1208
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: + 11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the

CIH-UPC2712T

Abstract: CIE-UPC2709T UPC2709T t06 93
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) 00 • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

1656C

Abstract: UPC1656C
Contextual Info: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER npC1656C FEATURES NOISE FIGURE AND v o l t a g e - vs. FREQUENCY g a in • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN

CIE-UPC2709T

Abstract: upc2712t
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES WIDE FREQUENCY RESPONSE: 2.5 GHz HIGH GAIN: 23 dB UPC2709T SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) m •o INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE O Ç ‘«j

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Marking C3W

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

marking C3Z

Abstract: marking c1h PC3242TB PC2712TB "Marking k2" mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

upc2709 upc2712

Abstract: UPC2712T UPC2709 UPC2709T UPC2709T-E3 UPC2712 UPC2712T-E3 t06 94 CIH-UPC2712T T0642
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T 25 Gain, Gs (dB) • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: UPC2721GR UPC2721GV UPC2722GR UPC2722GV SILICON MMIC L BAND DOWNCONVERTER FEATURES INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION UP TO 2.5 GHz • INTERNAL BALANCED AMPLIFIER FOR VCO • SINGLE ENDED PUSH-PULL IF AMPLIFIER OSC base bypass 1 • 5 V SINGLE SUPPLY VOLTAGE:

Contextual Info: a :? '> í SEC UPC2709T UPC2712T 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SMALL PACKAGE

UPC2709

Abstract: UPC2712 upc2709 upc2712 UPC2709T UPC2709T-E3 UPC2712T UPC2712T-E3 UPC2709T-E3-A
Contextual Info: UPC2709T, UPC2712T 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES GAIN vs. FREQUENCY • WIDE FREQUENCY RESPONSE: 2.5 GHz 30 • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) 25 Gain, Gs (dB) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

PC2721

Abstract: SMV1204-04 UPC2721 UPC2721GR UPC2721GV UPC2722 UPC2722GR UPC2722GV uPC272 upc27
Contextual Info: UPC2721GR UPC2721GV UPC2722GR UPC2722GV SILICON MMIC L BAND DOWNCONVERTER FEATURES INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION UP TO 2.5 GHz • INTERNAL BALANCED AMPLIFIER FOR VCO • SINGLE ENDED PUSH-PULL IF AMPLIFIER • 5 V SINGLE SUPPLY VOLTAGE: ICC = 30 to 35 mA