SILICON POWER GMBH Search Results

NE5520379A

Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE552R479A-T1A

Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

DCS1800

Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

NE552R679A

Abstract: NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2

7530D

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

ne552r

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2

NE5500479A

Abstract: NE5500479A-T1 VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate laterally diffused

NE5510279A

Abstract: NE5510279A-T1 VP215 PU10121EJ03V0DS
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate

NE5511279A

Abstract: NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateral-diffusion

Contextual Info: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance is ± 5 %. Applications

NE5500179A

Abstract: NE5500179A-T1 VP215
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm

NE5510279A-T1

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateraldiffusion MOS FET and housed in a surface mount package. The device can deliver 33.0 dBm output power with

1N474

Abstract: 1N4756A
Contextual Info: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. 949369 • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and

Contextual Info: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes \ Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and

Contextual Info: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and

1N4728A

Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4764A
Contextual Info: 1N4728A to 1N4764A VISHAY Vishay Semiconductors Silicon Power Zener Diodes \ Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with high power rating. • Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and

NEC 2501

Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features

liner integrated curcuit

Abstract: HS350 ATT10
Contextual Info: DATA SHEET Si ANALOG INTEGRATED CIRCUIT µPC8218T5A SILICON RF POWER AMPLIFIER IC FOR 1.9 GHz PHS DESCRIPTION The µPC8218T5A is a silicon monolithic integrated circuit designed for use as power amplifier 1.9 GHz PHS. This IC consists of three stage amplifiers as driver stage and final stage of power amplifier.

D251K

Abstract: D251N
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 251 N 8,4 8,4 E-Cu-Seil 25mm² E-CE-Rope 25 mm ² E-Cu-Seil 25mm² E-Cu-Rope 25 mm² Siliconschlauch Silicon tube Siliconschlauch Silicon tube

D251N

Abstract: Ifavm 250 A eupec rectifier D251K 251-N
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 251 N 8,4 8,4 E-Cu-Seil 25mm² E-CE-Rope 25 mm ² E-Cu-Seil 25mm² E-Cu-Rope 25 mm² Siliconschlauch Silicon tube Siliconschlauch Silicon tube

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 251 N 8,4 8,4 E-Cu-Seil 25mm² E-CE-Rope 25 mm ² E-Cu-Seil 25mm² E-Cu-Rope 25 mm² Siliconschlauch Silicon tube Siliconschlauch Silicon tube