power rectifiers
Abstract: 250 Amp current 1500 volt diode do-9 inverter welder circuit J5C3 J6B3 J6D3 J6M3 J5M3 j5f3
Text: Edal SERIES J5, J6 Silicon Power Rectifiers Edal Series J silicon power rectifiers are ideal for a broad range of commercial and military uses including power supplies, ultrasonic systems, inverters, welders, emergency generators, battery chargers, DC motors and motion
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dpak code
Abstract: POWER SCHOTTKY RECTIFIER marking code TC silicon power rectifier silicon power rectifier diodes CSHD10-45L marking code JC
Text: Central CSHD10-45L TM Semiconductor Corp. SURFACE MOUNT POWER SCHOTTKY SILICON RECTIFIER 10 AMPS, 45 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a Silicon Power Schottky Rectifier designed for surface mount power applications requiring a low forward voltage drop.
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CSHD10-45L
CSHD10-45L
30-September
dpak code
POWER SCHOTTKY RECTIFIER
marking code TC
silicon power rectifier
silicon power rectifier diodes
marking code JC
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Diode press-fit
Abstract: No abstract text available
Text: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with
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50A22
BYZ50K39
071855F
BYZ50K39
07185J
Diode press-fit
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e660
Abstract: No abstract text available
Text: BYZ 35A22 . BYZ 35K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 333 391 Silicon Press-fit diodes Silicon Protectifiers with
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35A22
35K39
35K39
e660
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selenium rectifier bridge
Abstract: high voltage high current bridge rectifier movs full wave rectifier diodes high voltage bridge rectifier selenium high voltage diodes cke scr
Text: HIGH POWER, HIGH VOLTAGE HIGH POWER, LOW VOLTAGE We Have You Covered! STANDARD & CUSTOM SEMICONDUCTOR ASSEMBLIES HIGH VOLTAGE SILICON RECTIFIERS • High Current/ High Voltage Silicon Rectifiers ■ MOVs ■ Selenium ■ Assemblies ■ High Voltage Diodes
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scr 5 amp
Abstract: NTE5511 NTE5512 SCR 30A 400V NTE5513 SCR 30A 200V
Text: NTE5511 thru NTE5513 Silicon Controlled Rectifier SCR 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in
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NTE5511
NTE5513
NTE5513
200mA,
scr 5 amp
NTE5512
SCR 30A 400V
SCR 30A 200V
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Schottky diode TO220 15A 1000V
Abstract: "Dual Schottky Rectifier" Schottky diode TO220 NTE6088
Text: NTE6088 Silicon Dual Schottky Rectifier 60V, 30 Amp, TO220 Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency
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NTE6088
NTE6088
Schottky diode TO220 15A 1000V
"Dual Schottky Rectifier"
Schottky diode TO220
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2N3525
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon Controlled Rflctlften 2N3228, 2N3525, 2N4101 TERMINAL DESIGNATIONS 5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications
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2N3228,
2N3525,
2N4101
JEOECTO-31JAA
2N3228.
2N4101
MI222,
MI225
2N3525
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NTE5826
Abstract: NTE5827 NTE5828 NTE5829
Text: NTE5826 thru NTE5829 Silicon Power Rectifier Diode, 50 Amp Description: The NTE5826 thru NTE5829 are silicon power rectifier diodes in a press–fit type package designed for use in all medium–current applications or for higher current industrial alternators and chassis
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NTE5826
NTE5829
NTE5829
NTE5826,
NTE5828)
NTE5827,
NTE5829)
NTE5827*
NTE5827
NTE5828
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SCR 30A 400V
Abstract: NTE314
Text: NTE314 Silicon Controlled Rectifier SCR Power Regulator Switch Description: The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere RMS, 400 Volt power supply and computer control applications to +100°C maximum junction.
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NTE314
NTE314
200Ager
100ns
SCR 30A 400V
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scr 5 amp
Abstract: 600v 5A scr NTE5511 NTE5513 400 amp SCR used for welding rectifier NTE5512 scr control circuit for welding SCR 30A 200V silicon controlled rectifier
Text: NTE5511 thru NTE5513 Silicon Controlled Rectifier SCR 5 Amp, TO66 Description: The NTE5511 thru NTE5513 all−diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power−control and power−switching applications. These devices are available in
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NTE5511
NTE5513
NTE5513
200mA,
scr 5 amp
600v 5A scr
400 amp SCR used for welding rectifier
NTE5512
scr control circuit for welding
SCR 30A 200V
silicon controlled rectifier
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Common Anode Schottky Rectifier
Abstract: SCHOTTKY RECTIFIER 10 Amp CSHD10-45L
Text: CSHD10-45L SURFACE MOUNT SILICON POWER SCHOTTKY RECTIFIER 10 AMP, 45 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a Silicon Power Schottky Rectifier designed for surface mount power applications requiring a low forward
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CSHD10-45L
CSHD10-45L
17-February
Common Anode Schottky Rectifier
SCHOTTKY RECTIFIER 10 Amp
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Untitled
Abstract: No abstract text available
Text: CSHD10-45L SURFACE MOUNT SILICON POWER SCHOTTKY RECTIFIER 10 AMP, 45 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a silicon power Schottky rectifier designed for power applications requiring a low forward voltage drop.
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CSHD10-45L
21-January
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Untitled
Abstract: No abstract text available
Text: CSHD10-45L SURFACE MOUNT SILICON POWER SCHOTTKY RECTIFIER 10 AMP, 45 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD10-45L is a silicon power Schottky rectifier designed for power applications requiring a low forward voltage drop.
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CSHD10-45L
CSHD10-45L
21-January
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NTE5930
Abstract: NTE5931
Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a
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NTE5930
NTE5931
NTE5930
NTE5931
NTE5930,
NTE5931*
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10 AMP 1200V RECTIFIER DIODE
Abstract: NTE5888 silicon power rectifier diodes NTE5884 NTE5885 silicon power rectifier NTE5864 NTE5865 NTE5889
Text: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp, DO4 Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for
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NTE5864
NTE5889
NTE5889
NTE5864,
NTE5865*
NTE5884,
NTE5885*
NTE5888,
NTE5889*
10 AMP 1200V RECTIFIER DIODE
NTE5888
silicon power rectifier diodes
NTE5884
NTE5885
silicon power rectifier
NTE5865
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VHE704
Abstract: No abstract text available
Text: VHE704 SILICON POWER RECTIFIER DESCRIPTION: The VHE704 is a High Efficiency Silicon Epitaxial Switching Rectifier for General Purpose Switching Power Supply Applications. PACKAGE STYLE DO-4 MAXIMUM RATINGS I 30 A AVG @ TC = 115 OC V 200 V V(rms) 140 V O
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VHE704
VHE704
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NTE5930
Abstract: NTE5931 NTE59
Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a
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NTE5930
NTE5931
NTE5930
NTE5931
NTE5930,
NTE5931*
NTE59
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Untitled
Abstract: No abstract text available
Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp, DO5 Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a
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NTE5930
NTE5931
NTE5930
NTE5931
NTE5930,
NTE5931*
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Untitled
Abstract: No abstract text available
Text: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency D Guarding for Stress Protection
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NTE6088
NTE6088
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NTE5885
Abstract: NTE5888 NTE5864 NTE5865 NTE5884 NTE5889
Text: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for
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NTE5864
NTE5889
NTE5889
NTE5864,
NTE5865*
NTE5884,
NTE5885*
NTE5888,
NTE5889*
NTE5885
NTE5888
NTE5865
NTE5884
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MCR380
Abstract: No abstract text available
Text: MCR380 SERIES SILICON BEAM -FIRED INTEG RATED GATE SILICON CONTRO LLED RECTIFIERS BEAM-FIRED INTEG RATED GATE THYRISTO RS . . . designed fo r high power industrial and consumer applications in power and speed controls such as welders, furnaces, m otors, space
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MCR380
20-ohm
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C750
Abstract: C750E1 C750N1 C750P1 C750PA1 C750PB1 C750PC1 C750PD1 C750S1 C750T1
Text: High Power SILICON sir POWGR Pf Silicon Controlled Rectifier 1600 A Avg. Up To 1400 Volts AMPLIFYING GATE The C750 is designed specifically for phase control applications like DC m otor control and power supplies, cycloconverters and current regulated inverters.
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100/isec.
C750
C750E1
C750N1
C750P1
C750PA1
C750PB1
C750PC1
C750PD1
C750S1
C750T1
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General electric SCR C147M
Abstract: GE C147S High power SCR c147 scr C147N C147 GE C147P ge c147 C147A C147B
Text: High Power Silicon Controlled Rectifier 1200 Volts I C147 1 63A RMS The General Electric C l47 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused device which is considerably smaller in size than comparably rated high power SCR’s.
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C147A
C147B
C147C
C147D
50AWING
General electric SCR C147M
GE C147S
High power SCR
c147 scr
C147N
C147
GE C147P
ge c147
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