SILICON SCHOTTKY DIODE SOD123 Search Results

diode sod-123 marking code 26

Abstract: marking r4 diode Silicon Schottky Diode sod123 R4 SOD-123 CMHSH-3 Schottky Diode schottky diode low vf schottky diode SOD-123
Contextual Info: CMHSH-3 SURFACE MOUNT SILICON SCHOTTKY DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.

top metal

Abstract: silan
Contextual Info: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

50um silicon die attach

Contextual Info: 2SB065040ML 2SB065040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: 2SB065040MT 2SB065040MT SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB065040MT is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Low VF; ¾ Guard ring construction for transient protection.

Contextual Info: SIEMENS Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65

smd diode 307

Contextual Info: SIEMENS Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65

marking diode SCHOTTKY SOD123 SMD

Abstract: Q62702-A990 BAT SMD
Contextual Info: Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting SMD Type BAT 65 1) Marking

Contextual Info: Central“ CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for­

Contextual Info: Central" CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for­

Silicon Schottky Diode sod123

Contextual Info: CMHSH-3 Central TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.

schottky diode 31

Abstract: schottky diode CMHSH-3
Contextual Info: CMHSH-3 Central TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.

schottky diode 100A

Abstract: Silicon Schottky Diode sod123 schottky diode low vf SOD123 CODE S
Contextual Info: CMHSH-3 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.

Contextual Info: CMHSH-3 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low forward voltage drop.

Contextual Info: CMHSH-3 Central TM Semiconductor Corp. SUPER-MINI SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage drop.

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

sod marking L2E

Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR120VLSFT1

Abstract: MBR120VLSFT3
Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

10j smd diode

Abstract: DIODE SMD to4 SCHOTTKY BARRIER DIODE Silicon Schottky Diode sod123 BAT93 MW200N diode smd 2x
Contextual Info: Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT93 QUICK REFERENCE DATA • Ultra-fast switching speed SYMBOL • Low forward voltage Vr CONDITIONS MAX. V 200 mA DESCRIPTION VF IP = 10 mA 400 mV Silicon epitaxial Schottky barrier

Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR230LSFT1

Abstract: MBR230LSFT1G
Contextual Info: MBR230LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

Contextual Info: MBR230LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: SD103AWS / 103BWS / 103CWS Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • This diode is also available in the MiniMELF case