15j321
Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.
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GT15J321
15j321
TRANSISTOR 15J321
GT15J321
TRANSISTOR 10003
TOSHIBA IGBT DATA BOOK
2-10R1C
marking 6_a
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TRANSISTOR 15J321
Abstract: 15j321 RG105
Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.
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GT15J321
TRANSISTOR 15J321
15j321
RG105
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gt20j321 equivalent
Abstract: 2-10R1C GT20J321
Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT20J321
gt20j321 equivalent
2-10R1C
GT20J321
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GT30J121
Abstract: GT30J324 ic604 IGBT GT30J121
Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT30J121
GT30J121
GT30J324
ic604
IGBT GT30J121
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GT50J325
Abstract: No abstract text available
Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J325
GT50J325
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GT50J325
Abstract: No abstract text available
Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J325
GT50J325
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GT50J121
Abstract: GT50J325
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
GT50J121
GT50J325
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GT30J324
Abstract: No abstract text available
Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT30J324
GT30J324
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GT30J324
Abstract: No abstract text available
Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT30J324
GT30J324
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K2662
Abstract: gt10j321 2-10R1C
Text: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT10J321
K2662
gt10j321
2-10R1C
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transistor equivalent 20j321
Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT20J321
transistor equivalent 20j321
20J321
gt20j321 equivalent
GT20J321
20j32
TOSHIBA IGBT DATA BOOK
2-10R1C
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Untitled
Abstract: No abstract text available
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
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transistor bf 198
Abstract: BF 212 transistor BF198 TFK 214 TFK 544
Text: BF 198 Silizium-NPN-Planar HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am p lifier stages in com m on em itter configuration Besondere Merkmale: Features:
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BF199
Abstract: TFK U 217 B transistor BF 199 TFK 505 BF 199 transistor bf 199 lamb TFK 001 TFK 505 am TFK U 111 B
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,
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transistor bf 196
Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,
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transistor bf 244
Abstract: BF311 TFK U 2510 B TFK 241 a1241 transistor BF 245 transistor BF 243 tfk 2510 tfk 4 241 TFK 311
Text: Siliz¡um-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,
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2SK709
Abstract: No abstract text available
Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK709 HIGH FREQ U EN CY A M PLIFIER APPLICATIONS. U n it in m m A M HIGH FREQ U EN CY A M PLIFIER APPLICATIONS. A U D IO FREQ UEN CY A M PLIFIER APPLICATIONS. • H ig h |Y fs | : |Y fs | = 2 5 m S T yp .
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2SK709
2SK709
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529
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2SJ200
-180V
2SK1529
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2SK508
Abstract: 076z marking K52 Vus-50V
Text: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0
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2SK508
O--00
2SK508
076z
marking K52
Vus-50V
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3SK59
Abstract: 3SK59-GR diode jn7 dual 1038 Transistor
Text: 2/U □ 3 h 3SK SILICON N-CHANNEL DEPLETION DUAL GATE MOS FIELD EFFECT TRANSISTOR O rMfa BF.MIXJI3 , VHF «Jirtlffl Unit in mm PM TUNER,VHF Amplifier Applications. -to AQC&fS&B: < AGCHfKi 'Vi ; 0res = C103pF Typ. &ntTj- ; NF = 2.2 dB (Typ .) C t— 100MHz )
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100MHz
3SK59
3SK59-GR
diode jn7
dual 1038 Transistor
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Untitled
Abstract: No abstract text available
Text: 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- MO S V 2SK3 4 3 7 TENTATIVE SWITCHING REGULATOR APPLICATIONS Unit in mm •Low Drain - Source ON Resistance : R D S {ONi=0*74Q(Typ.) •High Forward Transfer Admittance : IY fs |= 4 . 5 S(Typ.)
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2SK3437
100/z
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE D • 7^07*41 000CH71 13T » S A K J Silicon NPN Triple Diffused Planar ^ ☆Switching Transistor SC3890 Application Example : S S - fs e Outline Drawing 4 . . FM20 Switching Regulator and General Purpose Electrical Characteristics
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000CH71
SC3890
2SC3890
10Omax
100max
400mm
MT-25
T0220)
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General Semiconductor diode ed 7b
Abstract: IRL400
Text: TOSHIBA 2SK3498 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE t t - M O S V 2SK3498 TENTATIVE DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS UNIT:mm Low Drain - Source ON Resistance : R D S <oni =4.0i2(Typ.) High Forward Transfer Admittance : | Y fs |=0.6S(Typ.)
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2SK3498
General Semiconductor diode ed 7b
IRL400
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ltsj
Abstract: 2SC2623 2SC25 2SC2522 2SC2522A fujitsu ring emitter 2sc2523 15CF
Text: FUJITSU MICROELECTRONICS 31E D B 37417b2 DDlbSlfl 3 EI F M I -r- 2 2 - 1 3 FUJITSU fS if° : PR O D UC T P R O F I L E — . * 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN general purpose, high pow er
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37417b2
2SC2522,
2C2522A,
2C2523
2SC2522/2SC2522A/2SC2523
2SC2522/2SC25
/2SC2523
ltsj
2SC2623
2SC25
2SC2522
2SC2522A
fujitsu ring emitter 2sc2523
15CF
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