SILICON TRANSISTOR VCBO 800 VCEO 1000 IC 20A Search Results

ic 3A hfe 500

Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.

FZT968

Abstract: DSA003719 10/04/10M
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage

silicon transistor Vcbo 800 Vceo 1000 Ic 20A

Abstract: FCX1047A FCX1147A DSA003683
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX1047A ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;

ZTX968

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX968 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. TYP. Static Forward Current Transfer Ratio hFE 300 300 200 150 450 450 300 240 50 Transition Frequency fT 80 Output Capacitance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

RGK 20/1

Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic
Contextual Info: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4

FCX1149A

Abstract: DSA003683
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;

2sc3997

Abstract: ITR06217 ITR06218 ITR06219 ITR06220 ITR06221 2sc3997 transistor
Contextual Info: Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

2sc3997

Contextual Info: Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

2SC3998

Abstract: transistor 2SC3998
Contextual Info: Ordering number:ENN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2SC3153

Abstract: X0131
Contextual Info: Ordering number:ENN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3153] 15.6

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1

2SC5303

Abstract: TA-2322
Contextual Info: Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

2SC5444

Contextual Info: Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

2SC5683

Contextual Info: Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .

IT02410

Abstract: 2SC5723 A1030 40c208
Contextual Info: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2sc5682

Abstract: TA-2891
Contextual Info: Ordering number : ENN6608 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2SC5300

Abstract: 54164 ITR08095 ITR08096 ITR08097 ITR08098 IC 54161
Contextual Info: Ordering number:ENN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

Contextual Info: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.