SIMPLE 20 WATTS POWER AMPLIFIER Search Results

n-channel enhancement mode vmos power fet

Abstract: DV1201K
Contextual Info: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications

planar transformer theory

Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
Contextual Info: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

1n4740 MOTOROLA

Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
Contextual Info: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

J50 mosfet

Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

hf class AB power amplifier mosfet

Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Contextual Info: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

136y

Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up

RF coil MRI circuit

Abstract: circuit mri amplifier ARF475 2643006302 "RF MOSFETs" 2861006802 1kw mosfet ARF475FL RG-188 R7811
Contextual Info: Application Note 1809 September 2010 ARF475FL 128 MHz Pulse Amplifier Richard Frey, P.E. RF Applications Engineer Summary The ARF 475FL contains a push-pull pair of high voltage RF MOSFETs. It is designed to provide a performance and cost competitive alternative to high power RF parts packaged in the “Gemini” ceramic-metal package. The

Contextual Info: STICK-ON SERIES Model ST-PA2 Utility Power Amplifier ANYWHERE YOU NEED. • • • • • Up to 2 Watts RMS into 8 Ω Up to +12 dBu into 600 Ω Quality Utility Amplifier Intercom Driver Music-On-Hold Driver You Need The ST-PA2! The ST-PA2 is a utility power amplifier in the convenient line of STICK-ON products from Radio Design

b 1367 rf transistor

Abstract: 28V1001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

wireless video transmitter circuit

Abstract: Wireless video IC circuit j682
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

6a3 diode zener

Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

527 MOSFET TRANSISTOR motorola

Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

bd135 equivalent

Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features

MRF136

Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

ARCO

Contextual Info: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

Nippon capacitors

Contextual Info: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.

Triode 805

Abstract: Arco 403 arco 406 motorola diode 8296 ZENER A34 1N5925A AN215A AN721 MRF134 MRF134 - 176
Contextual Info: Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

J141 mosfet

Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

P-60FAC

Abstract: 12 TO 220 volt 1000 wat mic music auto level control csi p120-a MODEL SA MT-20-BC Siren horn Generator Siren Sound Generator 5 sound mini audio amplifier 10w transformer 220 volts 60 Hz specifications
Contextual Info: CSI/Speco Amplifiers, Speakers, Sirens and Accessories 60 Watts PA Amplifier Background Sound Amplifiers F-72 Multitester Features c 117/220 VAC or 12 VDC Mobile Use c Heavy Duty Adjustable Chrome Plated Mounting Bracket c AC and DC Fuse Protected c Inputs to Accommodate Microphones, Tape Decks, Phonos, Tuners

MRF136

Abstract: mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up

J852

Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up

Motorola AN211

Abstract: motorola 6810 aN211 MOTorola atc 7515
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER