planar transformer theory
Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
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MRF136Y/D
MRF136Y
planar transformer theory
TH D560
AN721
18006-1-Q1
AN215A
mosfet HF amplifier
motorola diode 8296
1N4740
319B
AN211A
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1n4740 MOTOROLA
Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
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MRF136Y/D
MRF136Y
1n4740 MOTOROLA
18006-1-Q1
motorola AN211A
MRF136Y
mrf136y design
motorola bipolar transistor data manual
319B-02
planar transformer theory
j342
1N4740
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J50 mosfet
Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
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MRF136
MRF136
AN215A.
J50 mosfet
J119 fet
transistor k 2723
J892
J168
J119 transistor
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hf class AB power amplifier mosfet
Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
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MRF136/D
MRF136
hf class AB power amplifier mosfet
Triode 805
motorola diode 8296
1N5925A
AN211A
AN215A
AN721
MRF136
J973
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RF coil MRI circuit
Abstract: circuit mri amplifier ARF475 2643006302 "RF MOSFETs" 2861006802 1kw mosfet ARF475FL RG-188 R7811
Text: Application Note 1809 September 2010 ARF475FL 128 MHz Pulse Amplifier Richard Frey, P.E. RF Applications Engineer Summary The ARF 475FL contains a push-pull pair of high voltage RF MOSFETs. It is designed to provide a performance and cost competitive alternative to high power RF parts packaged in the “Gemini” ceramic-metal package. The
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ARF475FL
475FL
ARF475FL
RF coil MRI circuit
circuit mri amplifier
ARF475
2643006302
"RF MOSFETs"
2861006802
1kw mosfet
RG-188
R7811
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Untitled
Abstract: No abstract text available
Text: STICK-ON SERIES Model ST-PA2 Utility Power Amplifier ANYWHERE YOU NEED. • • • • • Up to 2 Watts RMS into 8 Ω Up to +12 dBu into 600 Ω Quality Utility Amplifier Intercom Driver Music-On-Hold Driver You Need The ST-PA2! The ST-PA2 is a utility power amplifier in the convenient line of STICK-ON products from Radio Design
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EN55103-2
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wireless video transmitter circuit
Abstract: Wireless video IC circuit j682
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TPV8100B
wireless video transmitter circuit
Wireless video IC circuit
j682
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6a3 diode zener
Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
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MRF136/D
MRF136
6a3 diode zener
6a3 zener
MRF136
zener motorola
1N5925A
AN211A
AN215A
AN721
motorola MRF136
j331
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527 MOSFET TRANSISTOR motorola
Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
MRF134
AN215A
527 MOSFET TRANSISTOR motorola
vk200* FERROXCUBE
SELF vk200
Beckman resistor network
mrf134 motorola
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MRF136
Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
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MRF136/D
MRF136
MRF136
zener motorola
1N5925A
AN211A
AN215A
AN721
j331
s1170
MRF1364
MOTOROLA S 5068
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.
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MRF1507/D
MRF1507
DEVICEMRF1507/D
Nippon capacitors
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Triode 805
Abstract: Arco 403 arco 406 motorola diode 8296 ZENER A34 1N5925A AN215A AN721 MRF134 MRF134 - 176
Text: Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134/D
MRF134
Triode 805
Arco 403
arco 406
motorola diode 8296
ZENER A34
1N5925A
AN215A
AN721
MRF134
MRF134 - 176
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P-60FAC
Abstract: 12 TO 220 volt 1000 wat mic music auto level control csi p120-a MODEL SA MT-20-BC Siren horn Generator Siren Sound Generator 5 sound mini audio amplifier 10w transformer 220 volts 60 Hz specifications
Text: CSI/Speco Amplifiers, Speakers, Sirens and Accessories 60 Watts PA Amplifier Background Sound Amplifiers F-72 Multitester Features c 117/220 VAC or 12 VDC Mobile Use c Heavy Duty Adjustable Chrome Plated Mounting Bracket c AC and DC Fuse Protected c Inputs to Accommodate Microphones, Tape Decks, Phonos, Tuners
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c117/220
70-volt
WAT-10W
WAT-10-8
WAT-25
WAT-35*
T-7010
P-60FAC
12 TO 220 volt 1000 wat
mic music auto level control
csi p120-a
MODEL SA
MT-20-BC
Siren horn Generator
Siren Sound Generator 5 sound
mini audio amplifier 10w
transformer 220 volts 60 Hz specifications
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MRF136
Abstract: mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B
Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up
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MRF136/D
MRF136
MRF136Y
MRF136
MRF136/D*
mrf136y amplifier
18006-1-Q1
class A push pull power amplifier
mrf136y design
rf push pull mosfet power amplifier
zener motorola
1N4740
1N5925A
319B
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n-channel enhancement mode vmos power fet
Abstract: DV1201K
Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications
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DV1201K
DV1201K
n-channel enhancement mode vmos power fet
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136y
Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up
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MRF136
MRF136Y
MRF136Y
AN215A
DL110
136y
2117 equivalent
p channel de mosfet
zt173
MOTOROLA S 5068
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b 1367 rf transistor
Abstract: 28V1001
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
TPV8100B
b 1367 rf transistor
28V1001
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bd135 equivalent
Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features
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TP3069
TP3069
bd135 equivalent
motorola rf device
NF 935
bd135 input impedance
transistor tp3069
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transistor 7808
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
MRF134,
MRF134
68-ohm
AN215A
transistor 7808
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ARCO
Abstract: No abstract text available
Text: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end
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DV2860T,
DV2860U
DV2860
7-100pF)
ARCO
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
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J141 mosfet
Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance
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MRF161,
MRF161
AN215A
J141 mosfet
MRF-161
fet j141
2191F
SELF vk200
k 575
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Motorola AN211
Abstract: motorola 6810 aN211 MOTorola atc 7515
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
68-ohm
AN215Afor
Motorola AN211
motorola 6810
aN211 MOTorola
atc 7515
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SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
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MRF134
68-ohm
AN215A
SELF vk200
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