SINGLE IGBT GATE DRIVER Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER „ DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. „ FEATURES * A high current can directly drive IGBT

Contextual Info: YD8316 YOUDA INTEGRATED CIRCUIT IGBT GATE DRIVER—YD8316 DESCRIPTION The YD8316 is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT FEATURES *Can directly control from a micro-controller, *Can directly drive the IGBT gate using a high current. Source current: -200mA max , sink current 1A(max),

TA8316AS

Abstract: TA8316 igbt gate drive circuits
Contextual Info: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller

Contextual Info: TA8316AS TOSHIBA TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller

IGBT presspack

Abstract: IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E
Contextual Info: High Voltage IGBT Gate Driver – C0030BG400 Westcode Semiconductors Limited introduce a high voltage IGBT gate drive unit GDU designed to complement our range of high voltage Press-Pack IGBTs and standard IGBT modules. The device, known as C0030BG400, is a single

igbt gate drive circuits

Abstract: TA8316AS
Contextual Info: TO SH IBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller

TA8316

Contextual Info: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 8 3 1 6 AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller

IGBT DRIVE 50V 300A

Abstract: Dual opto coupler IC AC2500 photo coupler SANREX igbt driver opto coupler 122 photo coupler specification Photo resistor datasheet GH-038 high temperature reverse bias IGBT
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-038 SanRex Hybrid Gate Driver IC for IGBT High Voltage isolation by Photo Coupler Enable to drive IGBT up to dual 300A module Operate with single power source Support to high-density system design Built-in opto coupler input resistor 330

SANREX igbt driver

Abstract: GH-039 photo coupler Photo resistor datasheet sanrex IGBT IGBT DRIVE 50V 300A photo coupler specification
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex Hybrid Gate Driver IC for IGBT High Voltage isolation by Photo Coupler Enable to drive IGBT up to dual 300A module Operate with single power source Support to high-density system design Built-in Photo Coupler input resistor 330

igbt 400a

Contextual Info: Application Note 9001 June, 2000 Single IGBT Gate Driver by K.J. Um Introduction The FAN8800 is a monolithic integrated circuit designed for driving single IGBT with De-saturation and undervoltage protection. It is suitable for driving discrete and module IGBTs, and

IGBT 200A 600V

Abstract: igbt 400A 1N4937 FAN8800 KSH122 KSH127 SFR9014 D1N4937 single igbt gate driver
Contextual Info: Application Note 9001 July, 2000 Single IGBT Gate Driver by K.J. Um Introduction The FAN8800 is a monolithic integrated circuit designed for driving single IGBT with De-saturation and undervoltage protection. It is suitable for driving discrete and module IGBTs, and

GH-038

Abstract: photo coupler specification high current igbt driver AC2500 SANREX igbt driver driver circuit design for IGBT module igbt gate driver peak photo coupler
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-038 SanRex GH-038 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in photo coupler with resistor（330Ω）

GH-039

Abstract: SANREX igbt driver photo coupler specification
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex GH-039 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in Photo Coupler with resistor（330Ω）

single igbt gate driver

Abstract: FAN8800 KA3162
Contextual Info: www.fairchildsemi.com FAN8800 KA3162 Single IGBT Gate Driver Features Description • • • • • • • • • The FAN8800 is a monolithic integrated circuit designed for driving single IGBT with De-saturation and undervoltage protection. It is suitable for driving discrete and module

AN4502

Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
Contextual Info: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

FAN8800

Abstract: KA3162
Contextual Info: FAIRCHILD www.fairchildsemi.com FAN8800 KA3162 Single IGBT Gate Driver Features Description • • • • • • • • • The FAN8800 is a monolithic integrated circuit designed for driving single IGBT with De-saturation and undervoltage protection. It is suitable for driving discrete and module

AN4502

Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

KK33153

Contextual Info: TECHNICAL DATA SINGLE IGBT GATE DRIVER KK33153 The KK33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for

Contextual Info: S E M IC O N D U C T O R www.fairchildsemi.com tm FAN8800 KA3162 Single IGBT Gate Driver Features Description • • • • • • • • • The FAN8800 is a monolithic integrated circuit designed for driving single IGBT with De-saturation and undervoltage

EE-19 n transformer

Abstract: EE-19 transformer EE 19 transformer Power Transformer EE-19 frc 34 pin EE-25 transformer UC1727
Contextual Info: [ I ! INTEGRATED CIRCUITS UC1727 UC2727 UC3727 UNITRODE Isolated High Side IGBT Driver FEATURES Receives Power and Signal from Single Isolation Transformer Generates Split Rail for 4A Peak Bipolar Gate Drive 16V High Level Gate Drive Low Level Gate Drive more Negative

M57962L

Abstract: m57959l "MITSUBISHI HYBRID" CM600HA-24H CM600HA-24 "IGBT Drivers" 57962l CM600HA24H
Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 5.0 Using Hybrid Gate Drivers Mitsubishi offers four single in-line hybrid ICs for driving IGBT modules. All four drivers are high speed devices designed to convert

Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling

Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■

GIPL35K120L1

Abstract: STGIPL35K120L1 IPM STMicroelectronics SDIP-18L
Contextual Info: STGIPL35K120L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 1200 V short-circuit rugged IGBT Target specification Features • IPM 35 A, 1200 V single phase IGBT including control ICs for gate driving and free-wheeling diodes