SINGLE P-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Search Results
SINGLE P-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT |
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MYC0409-NA-EVM | Murata Manufacturing Co Ltd | 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board |
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PQU650M-F-COVER | Murata Manufacturing Co Ltd | PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical |
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BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
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SINGLE P-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDC658AP
Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
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FDC658AP FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A | |
marking 58A
Abstract: FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET
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FDC658AP marking 58A FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET | |
marking 654Contextual Info: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. |
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FDC654P FDC654P marking 654 | |
si3457dv
Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET
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Si3457DV Single P-Channel, Logic Level, PowerTrench MOSFET | |
Contextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. |
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Si3455DV | |
Contextual Info: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V. |
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Si3457DV | |
p-channel 7121
Abstract: Supersot 6 Si3455DV SI3455DV MARKING
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Si3455DV p-channel 7121 Supersot 6 SI3455DV MARKING | |
Contextual Info: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V. |
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Si3457DV | |
Si3455DVContextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. |
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Si3455DV | |
FDC654PContextual Info: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. |
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FDC654P FDC654P | |
si3457dvContextual Info: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V. |
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Si3457DV | |
marking A36AContextual Info: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. |
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FDC654P marking A36A | |
Contextual Info: January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features -11 A, -30 V. RDS ON = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench |
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Si4425DY OT-23 | |
FDS6575
Abstract: F63TNR F852 SOIC-16
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FDS6575 OT-23 FDS6575 F63TNR F852 SOIC-16 | |
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FDC654PContextual Info: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. RDS ON = 75 mΩ @ V GS = –10 V |
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FDC654P FDC654P | |
Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the |
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FDS6675 OT-23 | |
Contextual Info: February 1999 FAIRCHILD M IC D N D U C T Q R ! FDC65 8P Single P-Channel, Logic Level, PowerTrench General Description Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored |
OCR Scan |
FDC65 | |
Contextual Info: February 2007 FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize |
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FDN340P | |
SSOT-6
Abstract: FDC658P CBVK741B019 D872 F63TNR FDC633N y734
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FDC65 SOl-21 extremely180 SSOT-6 FDC658P CBVK741B019 D872 F63TNR FDC633N y734 | |
Contextual Info: October 1998 F A IR C H IL D SEM IC O N D UC TO R tm FDS6675 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize |
OCR Scan |
FDS6675 | |
tic 2260
Abstract: FDS4435 CBVK741B019 F63TNR L86Z
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FDS4435 tic 2260 FDS4435 CBVK741B019 F63TNR L86Z | |
fds4435 mosfet
Abstract: Power MOSFET, Fairchild FDS4435 ds4435 2197f
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FDS4435 FDS4435 DS4435 fds4435 mosfet Power MOSFET, Fairchild 2197f | |
CBVK741B019
Abstract: F63TNR FDC633N FDC658P SOIC-16 r rca 631
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FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16 r rca 631 | |
CBVK741B019
Abstract: F63TNR FDC633N FDC658P SOIC-16
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FDC658P OT-23 CBVK741B019 F63TNR FDC633N FDC658P SOIC-16 |