SIPMOS SIEMENS Search Results

semiconductors cross reference

Abstract: 7400 siemens igbt
Contextual Info: SIEMENS Literaturhinweise Information on Literature SIPMOS-Halbleiter SIPMOS Semiconductors Titel Title Datenbücher/Data Books SIPMOS-Halbleiter/SIPMOS Semiconductors Leistungstransistoren und Dioden Power Transistors and Diodes Power Modules SIMOPAC/IGBT

power transistors cross reference

Abstract: semiconductors cross reference IGBT cross reference 7400 B152-H6436-X-X-7600
Contextual Info: SIEMENS Literaturhinweise Information on Literature SIPMOS Semiconductors SIPMOS Halbleiter Ausgabe Seiten Bestell-Nr. Edition Pages Ordering No. DM Datenbücher/Data Books SIPMOS-Halbleiter/SIPMOS-Semiconductors Leistungstrari&istoren und Dioden Power Transistors and Diodes

Contextual Info: SIEMENS AKT IENGESELLSCHAF SIE » • 8535b05 004221G bMl « S I E G SIEMENS ^ - 03 - 0 / SIPMOS'-Chips SIPMOS* Chips Siemens fertigt SIPMOS-Halbleiterauch als Chip-Version. Diese SIPMOS-Chips bieten eine ebenso hohe und zuverlässige Leistung wie die entsprechenden Fertigprodukte.

inhalt liste

Contextual Info: SIEMENS Inhalt Inhaltsverzeichnis Table of Contents Seite Content Page Typenübersicht Selection Guide SIPMOS-Leistungstransistoren.9 IGBT-Transistoren. 12 FRED Schnelle Dioden.13 SIPMOS Power Transistors.9

transistor B 1184

Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L

Topology

Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products Smart SIPMOS Dice PROFET Monolithic Dice Die type Recommended bond wire diameter urn Source Logic Die topology Page 0.400 0.400 SIPC21A05 SIPC21C05 250 x 2 250 x 2 75 x 3 75 x 3 SE SE 1186 1186 0.250 0.220 0.220 0.220

SIEMENS THYRISTOR

Abstract: din IEC 747 ac transistors Transistoren SMD Code DIODE MARKING CODE 623 thyristor spice SIPMOS SIEMENS smd diode marking codes 31 DIODE smd marking CODE 128
Contextual Info: SIEMENS Inhalt Inhaltsverzeichnis Table of Contents Content Seite Page Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Kleinsignal Transistoren. 9 SITAC AC-Switches. 11 SIPMOS Small-Signa Transistors.9

5N10E

Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183

FREDFET

Abstract: 8A74
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF SIE D fl235b05 0 0 4 2 n s SG5 • S I E G -T -3 5 -/ / SIEMENS SIPMOS Leistungstransistoren SIPMOS* Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance

N 341 AB

Abstract: N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2
Contextual Info: SIEMENS SIPMOS*Leistungstransistoren SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Bestellnummer Ordering code Gehäuse Package Bild Figure 125 C67078-S1020-A2 TO-204 AA 4 40 C67078-S1316-A2 10-220 AB 8a 40 C67078-S1316-A3

transistor b 1185

Abstract: transistor B 1184 SIPC36AN10 SIPC25AN20 SIPC36AN05
Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 |im Die topology Page 0.018 SIPC36AN05 500 x 2 PH 1185 ^ D S m a x ) ^ D S |o n )m a x V Q 50 100 0.045 SIPC36AN10 500 PH 1185 200 0.120

0AB7

Abstract: BUZ p channel BUZ384
Contextual Info: SIEMENS SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse diodes (N channel) Typ Type M ds ^D S(on)m ax Id P tot V n A W Bestellnummer Ordering code

Contextual Info: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation

Contextual Info: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance

siemens bts 611

Abstract: load-dump siemens datenbuch siemens profet profet siemens
Contextual Info: SIEMENS Smart SIPMOS* Smart SIPMOS* PROFET Geschützter FET Doppelschalter PROFET® (Protected FET) Two channel switch Typ Type Vbb(AZ) R on (max) V m il /L-IS01) A / l‘ (MOS) ^L, Lim(typ) ) A A mit hoher intemer KurzschluBstrombegrenzung Bestellnummer

35Z diode

Contextual Info: 32E D • ISIP Ô23ta320 0Q17143 b BSS87 SIPMOS N Channel MOSFET f SIEMENS/ SPCL-, SEMICONDS - s s - • SIPMOS - enhancement mode • Drain-source voltage Vis = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation

Contextual Info: 32E D • Ö23b32ü QG172^b S [SIP SN 7002 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • _ SIPMOS - enhancement mode Draln-source voltage Vtt = 60V Continuous drain current I d = 0.19A Drain-source on-resistance fios on = 5.00 Total power dissipation

Contextual Info: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation

siemens Transistoren

Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Contextual Info: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

P-DSO-20-9

Abstract: 409L1 SIPMOS bts409 PROFET-. Semiconductor Group Smart Sense High-Side Power Switch to-220
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Alfons Graf Smart SIPMOS power switches in standard SMD packages: Silicon instead of heat sinks Semiconductor power switches that dissipate power and need cooling are out. With low-resistance “vertical” Smart SIPMOS

Contextual Info: BEE D • flE3b320 0017173 4 « S I P SIPMOS N Channel MOSFET T - S á M S" SIEMENS/ SPCLi SEMICONDS • SIPMOS - depletion mode • Draln-source voltage • Continuous drain current Vas = 250V /„ = 0.04A • Drain-source on-resistance • Total power dissipation

BTS412A

Abstract: C67078-S5305-A4 BTS413A BTS internal TO 220 AB 5 BTS542D C67078-S5303A3 SIPMOS SIEMENS C67078-S5303-A3 bts410
Contextual Info: SIEMENS Smart SIPMOS* Smart SIPMOS* PROFET Geschützter FET Einzelschalter PROFET® (Protected FET) Single switch Typ Type Version (max) ^ b b (AZ)4) V m il /L-IS01) A /|_ - M O S (m a x ) ) ^L, Lim (typ) ) A A mit hoher interner Kurzschlußstrombegrenzung

Q62702-S616

Abstract: Q62702-S483 BS 240 siemens BSS229 Q62702-S601 Q62702-S489 q62702-s484 Q62702-S455 BSS 130 Q62702-S615
Contextual Info: SIEMENS SIPMOS Kleinsignaltransistoren SIPMOS® Small-Signal Transistors Bedrahtete Bauformen Leaded types Typ Type ^D S m ax ^G S (th ) fa (max) ^ D S {o n )m a x V V mA n N-Kanal-Anreicherungstypen P lot mW Bestellnummer Ordering code Gehäuse Package