SIRENZA MARKING Search Results

VARI-L VCO PLL

Abstract: marking code 2- sirenza marking code sirenza SIRENZA MARKING smdi VARI-L VCO PLL 5 ghz Vari-L Company VARIL PLL
Contextual Info: MP Digest Page 1 of 5 February 2004 “K” Package VCO Module for Consumer Applications by Dan Wilmot, Clark Ragan, Marty Richardson, Sirenza Microdevices, Inc. With the acquisition of Vari-L Company, Inc. completed in May of 2003, Sirenza Microdevices, Inc. SMDI

MCH18

Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

transistor 2.4GHz amplifier schematic

Abstract: 2.4GHz amplifier schematic SZP-2026 SZP-2026Z 2.4GHz 2w Power Amplifier transistor SOF-26 szp2026z
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SLD-2083CZ

Abstract: JESD22-A119 mosfet reliability testing report JESD22-A103 laser diode lifetime JESD22-A104B JESD22-A108B JESD22-A114 JESD22-B103 SLD-1083CZ
Contextual Info: Reliability Qualification Report SLD-2083CZ – RoHS compliant Products to be Qualified by Similarity SLD-1083CZ Initial Qualification 2005 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SZP-5026Z

Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SZP-2026Z

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SOF-26

Abstract: SZP-3026Z IN4016
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam

V 2238

Abstract: mark 6044 SZA-6044 MAX5900
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam

SOF-26

Abstract: SZP-3026Z SZP-3026 IN4016
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

transistor u8 2w

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

2.4GHz 2w Power Amplifier transistor

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP

s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

Contextual Info: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically

Bw5 transistor

Abstract: SBW transistor sbw marking
Contextual Info: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP

marking 34 sot-363 rf

Abstract: DARLINGTON TIN GERMANIUM SMALL SIGNAL TRANSISTORS SIRENZA MARKING SOT-363 SGC-2463Z Sirenza Microdevices, Inc 239 sot363
Contextual Info: Preliminary Information SGC-2463Z Product Description Sirenza Microdevices’ SGC-2463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature

NGA-489

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance