SIS 965 Search Results

SLS501

Abstract: SL5500 SL550I
Contextual Info: Opto isolator Specifications SL5500, SLS501 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5500-SL5501 c o n sis ts o f a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a s ilic o n p h o to tr a n s is to r in a d u a l in -lin e p a ck a g e .

SiS662

Abstract: SiS964 SiS Mirage 3 SiS965L sis 965 giga Ethernet PHY RGMII SIS5513 SiS965 SiS Mirage 1 SiS649
Contextual Info: SiS649/965 ~ Compelling P4 Chipset ~ Technical Marketing Dept. Product Marketing Division. Silicon Integrated Systems Corp. August, 2004 Agenda ƒ PC Technical Trends ƒ SiS649/965 Architecture Overview ƒ Advanced Feature of SiS649/965 - Evolutionary PCI-Express Graphics Port

sis 965

Contextual Info: SIEMENS Window Discriminator TCA 965 B B ip o la r 1C P relim inary F eatures • • • • T w o w in d o w settings - d irect se ttin g o f lo w e r and upper edge vo lta g e w in d ow edges - indirect se ttin g by w in d o w center vo lta g e and half w in d o w w idth

Contextual Info: REVISIONS ZONE .965 •0 5 5 LTR ECW G 23245 R E V IS E D H 28925 ITEM 3 M A T 'L WAS - P /B R O N Z E K -090 3S3ÜÍ. u .155 MAX PANEL DATE i REDRAW N in s u l APPROVED uf a . 3 5 0 Î 6 1M S U L . U ftà .' 0 0 0 - 0 3 0 1 - Q I Z 'Z J - .4 6 7 RER- DESCRIPTION

Contextual Info: STOCKO CORP Ö7D<V\T« Ab7M07û / j - ¿,5 '7 3 DGGDDD7 T • Federgehause in Schneidklemmtechnik für Rastersteg- und Einzelleiter mit Isolationsdurchm'esser 1,2-1,5 mm SERIE SERIES SÉRIE IDC socket connectors for ribbon cable and discrete wire with insulation diameter 1,2-1,5 mm

Contextual Info: IL-FHfí-B SERIES CONNECTORS 0.5mm 1.020" Pitch Connectors for FPC • IL-FHR Series Suspended B-Type) IL -F H R S e rie s, B -typ e c o n n e c to rs are extrem ely h igh density, low profile c o n n e c to rs for P C B -to -F P C app lications. The d e sign

1N1318

Abstract: 1N1323 zener diode 1N961 1N1313 1N1356 IN946 1N938 1N939 1N957 1N958
Contextual Info: z z z zHoí Hzoí zHoi hOz ' rOzi' hzO ' H H H CO 9 O CO CO ^ O l O ' 01 r-i CM CO ^ ^ ^ 5 S S W V I cm ooo H Hró inrl cm cm co ooo ooo ooo ooo CO CO fO co co *5 150m w 10 watt Suffix A = 5% No Suffix z_ 10% Suffix A = 5% Suffix R = Rev. Polarity Diode typos presently available from Microsemi Corporation are shown in bold type.

sis 965

Contextual Info: A COMPANY MODELS RT26 and RT27 W irewound Trim m ers OF TECHNO M ilit a r y , M IL -R - 2 7 2 0 8 Q u a lifie d , T y p e R T FEATURES APPLICATIONS • Precious metal wiper Wirewound trimmers are particularly useful in • 0.25 watt to 85°C those applications where any combination of

diode smd yw

Abstract: SMD MARKING CODE 9b 2b
Contextual Info: In te r n a tio n a l IO R pd R e c tifie r 1 R p r e l im in a r y L M 9 . i 54 o S 1 9 0 2 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Description Fifth Generation H E X F E T s from International Rectifier

U9024N

Abstract: BSS 250 IRFR P-Channel MOSFET
Contextual Info: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2

irg4pc40u

Contextual Info: International XOR Rectifier PD - 9.1466D IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: 01401ZX Fast Bu ix 31 F e a tu r e s G en era l D e sc r ip tio n • • • • • • T h e E L H 0 0 3 3 is a high-spefe<L F E T îp iiu fc iy o lta è ^ fo llo w e r b u ff­ e r d e sig n ed to p ro v id e h ig h o u tp u t'g U rre n W fro ih y D C to o v er

IRF7303

Abstract: MS-012AA
Contextual Info: PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V

GA150TS60U

Contextual Info: PD -50056C GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

IRF7404

Abstract: irf7404 datasheet MS-012AA
Contextual Info: PD - 9.1246B IRF7404 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -20V RDS on = 0.040Ω

GE 443

Abstract: GA100TS60U
Contextual Info: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

8001401ZX

Abstract: J112 in smd 2202 bts smd UJ 99 MIL-I-45208A QCX0002 45* TO8* SO equivalent for 2N2219 1AV Series ELH0033G/883B
Contextual Info: F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • • T h e E L H 0 0 3 3 is a high-spefc follow er b u ffe r d esig n ed to p ro v id e h ig h d u tp u t e:Urrent ffro rK D C to o v e r 100 M H z. T h e E L H 0 0 3 3 slew s aÎKl500 ' ' , w ilP d riv e 100ÎÏ

GE 443

Abstract: GA100TS60U
Contextual Info: PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GE 443

Abstract: GA100TS60U
Contextual Info: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

f1010e

Abstract: MOSFET IRF 630 IRFI1010N equivalent irf 540 mosfet irf 480 IRF1010N IRFI1010N IRF 260 N irf 9246 sis 630 et
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

IRFz44n equivalent

Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

IRF7303

Abstract: MS-012AA 24v transformer
Contextual Info: PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V

f1010e

Abstract: IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier