SIS00 Search Results

Circuit Diagrams

Abstract: siemens Package Outlines ECONOPACK
Contextual Info: SIEMENS Package Outlines and Circuit Diagrams Fig. 1 W eight: 150 g Dim ensions in mm Fig. 2 W eight: 250 g Dim ensions in mm SIS00026 Sem iconductor Group 302 SIEMENS Package Outlines and Circfuit Diagrams Fig. 3 W eight: 190 g Dim ensions in mm Fig. 4 W eight: 420 g

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

Contextual Info: BSO201SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -20 V RDS on 8.5 mΩ ID • Super Logic Level (2.5 V rated) -14.7 A • 150°C operating temperature • Avalanche rated S 1 8 D

Contextual Info: SIEMENS BSM 200 GA 170 DN2 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on.m in = O hm UJ Type Package b Ordering Code BSM 200 G A 170 DN2 1700V 290A SINGLE SWITCH 1

BSO303P

Contextual Info: BSO303P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7

DAP02

Abstract: ML2612 ic dap02 F0123H F0124H nec f0123h SLC02 DAP00 MD001 CSI00
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SIEMENS BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^ G on.min = 5.6 Ohm 1c 1700V 440A UJ Type BSM300GA170DN2 E3166

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on

66a smd

Abstract: smd diode S2 64a A E 82A BSO203P
Contextual Info: BSO203P OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -20 V RDS on 21 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1

67a smd

Abstract: smd diode 67A smd code 67a BSK304SP diode um 67A smd 67a
Contextual Info: BSK304SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -30 V RDS on 26 mΩ ID • Logic Level -6.7 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated S 2 7

DT306

Contextual Info: Target data sheet BSO4420 SIPMOS =Small-Signal-Transistor Features Product Summary
N-Channel Drain source voltage VDS 30 V Drain-source on-state resistance RDS on 9.8 m
Continuous drain current ID 13 A
Enhancement mode
Avalanche rated
Logic Level

siemens igbt

Abstract: fr3060
Contextual Info: SIEMENS BSM 75 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate £ BSM 75 GAL 120 DN2 1200V 105A LU Type 1c Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d
Contextual Info: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package

BSO211P

Contextual Info: BSO211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode  Super Logic Level 2.5 V rated 150°C operating temperature  Avalanche rated  dv/dt rated VDS -20 RDS(on) 67 ID Type Package Ordering Code

BSO203SP

Contextual Info: BSO203SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode • Super Logic Level 2.5 V rated VDS -20 V RDS(on) 21 mΩ ID -9 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated

diode smd code 57A

Abstract: BSO207P smd diode 57A
Contextual Info: BSO207P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode  Super Logic Level 2.5 V rated 150°C operating temperature  Avalanche rated  dv/dt rated VDS -20 RDS(on) 45 ID Type Package Ordering Code

3G80

Abstract: BSK211P
Contextual Info: BSK211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature
Dual P-Channel
Enhancement mode -20 V R DS on 75 m
ID
Super Logic Level (2.5 V rated)
150°C operating temperature
Avalanche rated
dv/dt rated -3.5 S1 1 8 D1

BSO303P

Abstract: Q67042-S4010
Contextual Info: BSO303P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2

diode smd code 57A

Abstract: smd diode 57A BSO207P
Contextual Info: BSO207P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 45 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1

siemens igbt BSM 25 gb

Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 120 siemens igbt BSM 10 siemens igbt BSM 150 gb 100 d siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb SIS00025 siemens igbt BSM 25 gb 100 d siemens igbt BSM 75 gb 100
Contextual Info: Technical Information SIEM ENS 1000 V IGBT Power Modules Collector current Ic at Tc = 80 C Single switch Half-bridge VCE = 1000 V Chopper 3-phase full-bridge 5 A" - - - BSM 05 GD 100 D2> 10 A 1 - - - BSM 10 GD 100 D2) 15 A - - - BSM 1 5 G D 100 D 25 A - BSM 25 GB 100 D

BSO303P

Contextual Info: BSO303P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO303P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

Contextual Info: SIEMENS BSM 25 G D120D2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type ^CE BSM 25 GD 120 D2 1200V 35A Vc Package Ordering Code SIXPACK 1 C67076-A2505-A17 Maximum Ratings

BSO613SPV

Abstract: BSO613SPV G
Contextual Info: Preliminary data BSO613SPV SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.13 W · Avalanche rated Continuous drain current ID -3.44 A ·