SIZ916DT Search Results

311E-15

Abstract: 8082 8-PIN
Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: SiZ916DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A) g Qg (TYP.) RDS(on) () (MAX.) 30 0.00640 at VGS = 10 V 16 a 0.01000 at VGS = 4.5 V 16 a 0.00130 at VGS = 10 V 40 a

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:

Contextual Info: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in

sir158

Abstract: q113 SiZ340DT SiR158DP N3X3
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

POWERPAK SO8

Abstract: SIS32
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one