SJ 33 DIODE Search Results

Contextual Info: TOSHIBA 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 6 Unit in mm + 0.2 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr V rm Tj Tstg RATING UNIT

Contextual Info: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -

Sj 33 diode

Contextual Info: T O SH IB A 1 SV 217 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 C ATV TUN IN G . U nit in mm • High Capacitance Ratio : C 2 V / C 25 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 0.2 + 1.25 - 0.

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

TRK 1703

Abstract: 74124 741244 tfk 223 18 BZX BZX 5.1
Contextual Info: ' w B Z X 5 5 / C . . . O Silizium-Epitaxial-Planar-Z-Dioden Silicon epitaxial planar Z diodes Anwendung: Spannungsstabilisierung Applications: Voltage stabilisation Besondere Merkmale: • • • • • Scharfer Abbruch der Sperrkennlinie Niedriges Sperrstrom niveau

Contextual Info: MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H lo V r rm DC output cu rre n t. 100A Repetitive peak reverse voltage 4 0 0 /8 0 0 /1 2 0 0 /1 6 00 V 3 phase bridge Insulated Type

Contextual Info: RF2140  9 '&6 32: 5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • 3V DCS1900 (PCS) Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • 3V DCS1800 (PCN) Cellular Handsets

Contextual Info: 2SK3650-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

Contextual Info: MITSUBISHI DIODE MODULES RM75TPM-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TPM-M,-H,-24,-2H lo V r rm DC output cu rre n t. 150A Repetitive peak reverse voltage 4 0 0 /8 0 0 /1 2 0 0 /1 6 00 V 3 phase bridge Insulated Type

C25P05Q

Abstract: C25P06Q
Contextual Info: SCHO TIKY BARRIER DIODE C2SPOSQ C25P06Q 2 7 .7 A /5 0 -6 0 V FEATURES • Similar to TO-247AC TO-3P Case • Dual Diodes - Cathode Comaon • Low Forward Voltage Drop •Low Power Loss, High Efficiency ° High Surge Capability • 20 Volts thru 100 Volte Types Available

TT390

Abstract: 2RI60G 2X60 P930 T151 T810
Contextual Info: 2 R I6 0 G 2 x60A : O utline Drawings POWER DIODE MODULE ¡r : Features 7 X ' < '> '< — > 3 • • M ]1 { t Glass Passivation C hip > • ? " j ~7 Easy C o n n e ctio n • 30 . jé i e M-r?) «».s*,«»?7*.«H»7».°-/ mo.BKa : A p plicatio ns • <

Contextual Info: 1SV239 T O SH IB A 1 SV2 3 9 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VCO FOR UHF RADIO Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set + 0.2 1. 2 5 - 0.1 CMi-* do -I- 1 0 ± 0.0 5 + 0.1 + 0.1

CR356A

Abstract: SM355 SM351 CR344 CR345 CR346 CR347 CR348 CR349 CR350
Contextual Info: CURRENT REGULATOR DIODES Pin ch Oft Cun-ent at as VDC U A > IllilsS : P a rt N u m b er Packag e Type Minimum Nominal Maximum Limiting Voltage at 0.811,. V t (V o lts Dynam ic Im pedance at V, =25V Z. (K O h m sJ K nee Im pedance at V.= 6V Z. (K O h m s)

bcore-an-008P

Abstract: BlueCore6 Selection of i2c eeproms for use with bluecore BC63C159A CS-112584-SP CS-116434-ANP CS-112584-SPP CS-116434-An bcore-an-066P JESD22-A224
Contextual Info: Device Features • ■ ■ ■ ■ ■ Single Chip Bluetooth v2.1 + EDR System Fully qualified Bluetooth v2.1 + EDR Full speed Bluetooth Operation with Piconet and Scatternet Support Best in Class Bluetooth Radio with +8dBm Transmit Power and -90dBm Receive Sensitivity

TLP741G

Contextual Info: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741G Unit in mm Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

mm74c922

Abstract: nte CROSS-REFERENCE SJ 76 A DIODE EMI Quad 2 input nand gate cd 4093 7400 functional cross-reference HST 4047 pinout information of CMOS 4001, 4011, 4070 32-Bit Parallel-IN Serial-OUT Shift Register Fairchild Semiconductor Integrated Circuit Data Catalog 1970 application MM74C926
Contextual Info: Logic Product Catalog Analog Discrete Interface & Logic Optoelectronics July 2002 Across the board. Around the world. Logic Literature Table of Contents Description Literature # Advanced Logic Products Databook CROSSVOLT , Fairchild Switch, TinyLogic™, VHC

Contextual Info: January 1988 Semiconductor MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis­ charge by internal diode clamps to V cc and ground.

Contextual Info: January 1988 Semiconductor & MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis­ charge by internal diode clamps to Mqc and ground.

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: SCHOTTKY BARRIER DIODE FCH20A04 20A / 40V 3.11.122 MAX 10.3Í.405) FEATURES 3.4U34Ì. /TCTT5ic o TO-220AB Fully Molded ODual Diodes - Cathode Common o Low Forward Voltage Drop o High Surge Capability oT j = 150‘C operation FC H 20A . • Dimensions in mm Inches)

37 TV samsung lcd Schematic circuit diagram

Abstract: smd 475 20k 233 DIODE samsung lcd tv power supply schematic pcb circuit diagram of crt tv samsung BB509 ICSL6256 BA41-01039A schematic diagram crt tv samsung schematic Samsung TV led backlight AP4435
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL

Contextual Info: IIAlC f QiU ZENER DIODES 2.0 WATT ZENER DIODES/P1 /DO-41 Zener Voltage Range Vz @ lz j Volts * Number Maximum ["• i:[i2èiîèïy-: Impedance ZZ T @1ZT (Ohms) Typical sj; Temperature .i-I Coefficient A T iZT O PERATIN G /STO RAG E T EM PER A TU R E -55°CTO +150°C

diode ax 277

Contextual Info: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC1R5 Package I MTO-3P 22± aa%j T y p e No. » 5 . 0 ±0-3 \r D a te code >Tjl25°C US V f = 0.41V r +0.5 lo-o.^ 4>33±0-2 15V 4 0 A Unit • mm -, \ 2 . 0 ±0-3 S # 2 . 4 ±0-3

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,