SK 100 KQ 16 Search Results

SK 100 KQ 12

Abstract: SK 100 KQ 16 3SK100 sk 120 kq 16 12SK100 semikron SK 300 Semikron Semitop sk 45 kq 16
Contextual Info: VRSM VRRM VDRM V V 101 A 134 A 900 1300 1700 800 1200 1600 SK 100 KQ 08 SK 100 KQ 12 SK 100 KQ 16 SK 120 KQ 08 SK 120 KQ 12 SK 120 KQ 16 Symbol Conditions IRMS W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

sk 120 kq 16

Abstract: SK 100 KQ 12 Semikron Semitop 3 1200 A thyristor KQ12 semikron SK 100 125 T VV105 138AA
Contextual Info: VRSM VRRM VDRM V V 105 A 138 A 900 1300 1700 800 1200 1600 SK 100 KQ 08 SK 100 KQ 12 SK 100 KQ 16 SK 120 KQ 08 SK 120 KQ 12 SK 120 KQ 16 Symbol Conditions IRMS W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

Semikron Semitop sk 70 kq 12

Abstract: Semikron Semitop 3 Semikron Semitop sk 70 kq w1c semikron TH 46 Thyristor SK 70 KQ 16 SEMIKRON sk 120 kq 16 Semikron Semitop sk 45 kq Semikron Semitop sk 45 kq 12 Semikron sk 75
Contextual Info: VRSM VRRM VDRM V V 46 A 71 A 900 1300 1700 800 1200 1600 SK 45 KQ 08 SK 45 KQ 12 SK 45 KQ 16 SK 70 KQ 08 SK 70 KQ 12 SK 70 KQ 16 Symbol Conditions W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

semikron SK 100 125 T

Abstract: semikron SK SK 100 KQ 12
Contextual Info: SK 25 KQ VRSM VRRM VDRM SEMITOP 1 IRMS maximum values for continuous operation (Th = 85 °C) V V 29 A 900 1300 1700 800 1200 1600 SK 25 KQ 08 SK 25 KQ 12 SK 25 KQ 16 Antiparallel Thyristor Module SK 25 KQ Symbol Conditions Values Units IRMS W1C; sin 180°; Th = 100 °C

Semikron Semitop sk 70 kq 12

Abstract: Semikron Semitop sk 70 kq Semikron Semitop sk 45 kq 12 Semikron Semitop sk 45 kq 16 SK 70 KQ 16 SEMIKRON 3SK45 Semikron sk 1 Semikron Semitop sk 45 kq sk 45 kq 12 Semikron Semitop sk 70 dt 08
Contextual Info: VRSM VRRM VDRM V V 47 A 72 A 900 1300 1700 800 1200 1600 SK 45 KQ 08 SK 45 KQ 12 SK 45 KQ 16 SK 70 KQ 08 SK 70 KQ 12 SK 70 KQ 16 Symbol Conditions W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

W1C 400

Abstract: w1c semikron
Contextual Info: VRSM VRRM VDRM SEMITOP 1 IRMS maximum values for continuous operation (Th = 85 °C) V V 29 A 900 1300 1700 800 1200 1600 SK 25 KQ 08 SK 25 KQ 12 SK 25 KQ 16 Antiparallel Thyristor Module SK 25 KQ Symbol Conditions Values Units IRMS W1C; sin 180°; Th = 100 °C

Contextual Info: E2A0011-16-X1 O K I Semiconductor MSM6927/6947 This version: Jan. 1998 Previous version: Nov. 1996 1200 bps Single Chip FS K MODEM GENERAL DESCRIPTION The MSM6927 and the MSM6947 are OKI's 1200 bps single chip modem series which transmit and receive serial, binary data over a switched telephone network using frequency shift

semikron thyristor

Abstract: SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E
Contextual Info: Semikron Thyristor, Diode and IGBT Modules SEMIKRON invented the SEMIPACK¨, the beginning of a new industry standard for isolated power semiconductor modules. The SEMIKRON power modules represent quality, continued innovation and engineering know-how that reduce

Contextual Info: O STR U C TU R E O PRO D U CT NAME O P A R T NUMBER O O U TLIN E DIMENSION O B L O C K DIAGRAM OFUNCTION O FEA TU RES Silicon Monolithic Integrated Circuit 128 x 16 bit Electrically Erasable Programmable ROM B R 9 3 L 5 6 /F /R F/FJ/R FJ/F V /R F V /R FV M -W

CHN 804 diode

Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
Contextual Info: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced

semikron sk 50 et 12

Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
Contextual Info: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen

ftt112

Abstract: BR93L56RFV-W BR93L56-W BR93L56
Contextual Info: OSTRUCTURE OPRODUCT NAME OPART NUMBER OOUTLINE DIMENSION OBLOCK DIAGRAM OFUNCTION OFEATURES Silicon Monolithic Integrated Circuit 128 x 16 bit Electrically Erasable Programmable ROM BR93L56/F/RF/FJ/RFJ/FV/RFV/RFVM-W Fig. - 1 Plastic Mold Fig. - 2 General purpose

BR93L56

Contextual Info: OSTRUCTURE OPRODUCT NAME OPART NUMBER OOUTLINE DIMENSION OBLOCK DIAGRAM OFUNCTION OFEATURES Silicon Monolithic Integrated Circuit 128 x 16 bit Electrically Erasable Programmable ROM BR93L56/F/RF/FJ/RFJ/FV/RFV/RFVM-W Fig. - 1 Plastic Mold Fig. - 2 General purpose

SKDD 150

Abstract: SKDD
Contextual Info: Silicon Monolithic Integrated Circuit 256 x 16 bit Electrically Erasable Programmable ROM B R 9 3 L6 6 /F /R F/FJ/R FJ/F V /R F V /R F V M -W Fig. - 1 Plastic Mold Fig. - 2 General purpose •256words x 16 bit organization 4kbit serial EEPROM ■Wide operating supply voltage ranged.8~5.5V)

APM4546

Abstract: BR93L46RFVM-W BR93L46FJ-W BR93L46FV-W BR93L46F-W BR93L46RFJ-W BR93L46RFV-W BR93L46RF-W BR93L46-W TA40qC
Contextual Info: Silicon Monolithic Integrated Circuit 64 x 16 bit Electrically Erasable Programmable ROM B R 9 3 L 4 6 /F /R F /F J /R F J /F V /R F V /R F V M -W Fig. - 1 Plastic Mold Fig. - 2 General purpose •64words x 16 bit organization 1kbit serial EEPROM ■Wide operating supply voltage ranged.8 ~ 5.5V)

cy 4902

Contextual Info: ^ STRUCTURE O P R O D U C T NAME O P A R T NUM BER O O U T U N E DIMENSION O B L O C K DIAGRAM ^ FU N C T IO N OFEATURES Silicon Monolithic Integrated Circuit 64 x 16 bit Electrically Erasable Programmable ROM B R 9 3 L 4 6 / F / R F / F J / R F J / F V / R F V / R F V M -W

cy 4902

Abstract: 93l46r
Contextual Info: ^ STRUCTURE O P R O D U C T NAME O P A R T NUM BER O O U T U N E DIMENSION O B L O C K DIAGRAM ^ FU N C T IO N OFEATURES Silicon Monolithic Integrated Circuit 64 x 16 bit Electrically Erasable Programmable ROM B R 9 3 L 4 6 / F / R F / F J / R F J / F V / R F V / R F V M -W

capacitor 107 16k 125

Abstract: capacitor 107 16k digital graphic equalizer ic
Contextual Info: XR-1091 2 £ * E X Graphic Equalizer Display Filter 4 R FEATURES APPLICATIONS • Internal R /C Oscillator • Provides Seven Filters in One 16-Pin Package • Dual Inputs for Summing Left and Right Channels • Graphic Equalizers • Tape Recorders • Provides 30 dB of Gain

mu24 dc

Abstract: SWT-2
Contextual Info: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration

Contextual Info: ORECOMMENDEP OPERATING CONDITION Parameter Symbol Rating Supply Voltage Vcc 1.8 ~ 5.5 Input Voltage Vin 0 ~ Vcc OELECTORICAL CHARACTERISTICS Unless otherwise specified Ta=-4Q~85°C,Vcc=2.5~5.5V Limit Symbol Parameter Unit Min. Typ. Max. Input Voltage “L” 1

marking r55

Abstract: SK 100 KQ 12 RF25S 11KB
Contextual Info: TYPE :<OA SPR SPEC IA L C AR BO N FILM POW ER RESISTORS FLAM EP R O O F 4 DX> 3 <£! TYPE : •5 P R Ü SPR 1 ■:;,S P R 2 ' SPR 3 SPR 5 L ref. 6.5 9 12 15.5 24.5 O I D IM ENSIO N mm C max. D 7.1 2 5 + 0.5 11.1 3 5 + 0.5 15 4 2+0 8 18 6 +1 28 9 +1 C o a tin g Color . Light Green

Contextual Info: KENNEDY H S CORP M.S. KENNEDY CORP. m 51343D0 D O D O l ^ HIT « M S K b3E D INVERTING OPERATIONAL AMPLIFIER 8170 Thompson Road • Cicero, N.Y. 13039 738 (315) 699-9201 FEATURES: • Very Fast Settling Time • Very Fast Slew Rate • W ide Bandwidth •

Contextual Info: Q R E C O M M E N D E D OPERATING CONDITION Parameter Symbol Rating Supply Voltage Vcc 1.8 - Input Voltage Vin 0 ~ Vcc Unit 5.5 V O E L E C T 0 R I C A L CH ARACTER ISTICS Unless otherwise specified T a= -4 0 ~ 8 5 ° C ,V c c — 2.5~5.5V Parameter Symbol

Contextual Info: ORECOMMENPED o p e r a t in g c o n d it io n Symbol Parameter Unit Rating Supply Voltage V cc 1.8 — 5.5 Input Voltage Vin 0 — V cc O ELE C TO R IC A L CH ARACTERISTICS Unless otherwise specified Ta = -4 0 ~ 85°C,Vcc=2.5 ~ 5.5V Limit Unit Symbol Parameter