SK 100 TRANSISTOR Search Results

3SK122

Abstract: sk 122 SK122 1SK09 W1217 4TO220 A109 Leistungstransistor
Contextual Info: A Strangkühlkörper ’ 3,2 17 20 14,8 K/W 10 29 8 7 29 K SK 145 20 TO 220 15,5 12 17,7 ’ 3,2 50 1000 mm TO 220 14 4,5 11,3 7 29 SK 145 37,5 TO 220 ’ 3,2 100 150 200 mm 50 100 150 200 mm SK 145 50 TO 220 ’ 3,2 3 12 ’ 3,2 14 14,75 50 17,7 4,5 11,3 4,5 SK 145 25 TO 220

SK 50 et 12

Abstract: Dissipateur A123 TO-66-3 a9311 Heatsinks to-220 AA93
Contextual Info: A U-Kühlkörper U-shaped heatsinks Dissipateurs en U K/W 25 9 20 15 15 1,5 SK 12 10 5 12 1000 mm 25 50 75 100 mm 50 100 150 200 mm 25 50 75 100 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 20 10 16 2 16 SK 192 18 14 12 14 50 1000 mm K/W 25

Heatsinks sk 489

Abstract: sk514 sot823 transistor et 460 SK104a THF 104 THF 185 boitier to 126 SOT TO-126 mounting AT20N
Contextual Info: A Retaining springs for transistors Lochbild 4 6,3 11,7 14 Perforations 10 THF 129 TO 220 4 für Kühlkörper für Blechstärke pour épaisseur de tôle 1 – 2 mm FS SK 129 A 105/106 1 – 2 mm FS SK 104 A 97/98 1 – 2 mm FS TO 3 P SK 409 A 99/100 TO 247

sk 473

Abstract: SK5137 A461A SK43A SK113 2SK519 SK1100 SK-1360 3SK122 SK1856
Contextual Info: A 1:1 Strangkühlkörper Dissipateurs extrudés Extruded heatsinks K/W 36 33 6,3 3,9 6,5 30 1,3 SK 522 27 10,6 12,6 24 15 25 37,5 50 1000 mm 15 30 45 50 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 26 24 22 20 8 SK 521 3 18 15,3 25 37,5 50 75 100 1000 mm

Contextual Info: A U-Extruded heatsinks art. no. Rth [K/W] B 25 9 20 15 15 1,5 10 5 C 12 SK 12 . 25 50 100 [mm] 75 . please indicate: 1000 mm art. no. D Rth [K/W] 25 14 20 15 13 1,5 10 E 5 17 25 50 75 100 [mm] 100 150 200 [mm] SK 13 . please indicate: F . 25 35 mm

Contextual Info: RF2423 I MICRODEVICES 100 mW SPREAD-SPECTRUM TRANSMITTER IC Typical Applications • Digital Communications Systems • Analog Communications Systems • Spread Spectrum Communications Systems • FM, AM , SSB, DSB Modulation • FSK, G M SK , Q P S K , D Q P SK , Q AM Modulation • Portable Battery Powered Equipment

Semikron sk 100 dal

Abstract: Semikron sk 75 SKHB10 Semikron sk 50 da SKHB 10 sk 100 transistor SK75DAL SK 300 CIRCUIT Semikron sk 100 semikron SK 50 DB 100 D
Contextual Info: se MIKRO n Section 7: SEMITRANS Bipolar Power Transistor Modules Summary of types Type Ptot h21E I tf ts resistive load Tvj = 25 °C Circuit Page VcEVsus le VcEsat V A V lc A VcE = 5V lc A W US M-S SK 50 DA 100 D • SK 50 DA 120 D 1000 1200 50 50 2,5 3

Heatsinks sk 489

Abstract: SK481 W108 2SK514
Contextual Info: Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 29,4 45 K/W 10 8 6 4 SK 489 M3 2 8 12 25 37,5 50 75 84 100 1000 mm 50 100 150 200 mm 50 100 150

SK 43

Abstract: SK482 Heatsinks sk 499 heatsinks SK495 A85A
Contextual Info: A Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 10,3 K/W 35 7 6 5 12,5 4 SK 482 3 2 1 M3 25 37,5 50 75 84 100 1000 mm 25 8 50 100 150 200 mm

TLN103

Abstract: TLN108 TPS605LB
Contextual Info: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light

SK 50 et 12

Abstract: Heatsinks SK432 SK173 to 126 leistungstransistoren
Contextual Info: 1:1 A Dissipateurs spéciaux 26 Special heatsinks 51 Spezialkühlkörper K/W 2,5 2,0 1,5 51,5 1,0 0,5 SK 46 50 100 150 200 mm 50 75 1000 mm Taraudages, trous débouchants et fentes de fixation suivant votre spécification. 12 ,5 Threads, through holes and fixing slots

thyristor st 103

Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
Contextual Info: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction

Varistoren lebensdauer

Abstract: semikron skpt 25 semikron skpt SKPT 25 SKPT 11 SKPT25A3 SKPT Varistoren bimetall Thyristor Tabelle
Contextual Info: 14.2 SEMIKRON Impulsübertrager Typenschlüssel SK PT 27 a 10 SEMIKRON-Bauelement Pulsübertrager Gehäusegröße Übersetzungsverhältnis a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Typennummer ungefährer ∫ vdt-Wert [µVs]/100 Technische Erläuterungen

semikron skpt

Abstract: SKPT 11 semikron skpt 25 SK Ferrite Core semikron pulse transformer SEMIKRON type designation Semikron skpt 27 3/10 semikron Semiconductor Fuses current transformer semikron SKPT 25
Contextual Info: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction

T-047

Abstract: SK4909 SK9032 SK3996 SK9031 T047 SK3960 SK3959 SK3961 SK9034
Contextual Info: THOMSON/ ESQ DISTRIBUTOR SfiE D BIPOLAR TRANSISTORS • TDStjfl73 0 0 0 4 Ö 2 7 TOO ■ TCSK . coni Maximum Ratings TCE Type Breakdown Voltages Device Polarity <S Material Application ‘complementary äewce type Device Power Dissipato. Collector Current

SK9042

Abstract: SK9134 SK9041 SK9111 SK9085 sk9131 SK9109 SK9107 SK9110 SK9115
Contextual Info: T H OM SO N/ D I S T R I B U T O R [ml] SflE D • T02bfl73 O Q O H a P T ÖÖ3 ■ TCSK BIPOLAR TRANSISTORS cour. Maximum Ratings Breakdown Voltages Device Polarity & TICE Type Application Material ’complementary device type Device Power Dissipatn.

transistor mpsa20 equivalent

Abstract: bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five MPS-K22
Contextual Info: 2 SILICON M P S - A M P S - K 2 M P S - K 2 2 , M P S - 2 K I , NPN SILICON AMPLIFIER TRANSISTORS NPN SILICON ANN U LAR TRANSISTO RS . . designed fo r u n In audio, radio, a n d television applications. e e M P S - K 2 0 , M P S - K 2 1 , M P S - K 2 2 are 3, 5 and 9

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

SK3180

Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Contextual Info: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

sk9134

Abstract: SK9133 SK9085 SK9362 SK9117 rca 036 SK9134/181 SK9362/376 sk9363 SK9116
Contextual Info: THOMSON/ DISTRIBUTOR GTE D | “ìGSbflTa □ □ □ 3 3 b ci ñ | T-%Z - I "7 3ipolar Transistors cont’d CHARACTERISTICS LIMIT CONDITIONS BREAKDOWN VOLTAGE RCA Type Polarity and Material - Device D illipation Pi W SK9076/187A SK 9 0 85/379f PNPSi N PN Si

AUY 10

Abstract: AUY19 legiert Q62901-B11-A pnptransistor W130 AUY20V PNP-Germanium
Contextual Info: PNP-Transistoren für Schalteranw endungen bis 3 A A U Y 19 A U Y 20 A U Y 19, A U Y 20 sind legierte PNP-Germanium-Transistoren im Gehäuse 3 A 2 DIN 41872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die Transistoren sind besonders für den Einsatz als NF-Leistungsschalter geeignet.

Contextual Info: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn­ zeichnet. Für folgende Arbeitspunkte gilt:

Contextual Info: BCX 24 N P N -S iliziu m N F -T ran sisto r V o r lä u f ig e D a te n B C X 24 ist ein epitaktischer NPN-Silizium -Planar-Transistor im Metall-Gehäuse 18 A 3 D IN 41 8 7 6 T O -1 8 . Besonders in N F -V o r- und Treiberstufen, sow ie für universelle A n ­