SK 120 KQ 16 Search Results

SK 100 KQ 12

Abstract: SK 100 KQ 16 3SK100 sk 120 kq 16 12SK100 semikron SK 300 Semikron Semitop sk 45 kq 16
Contextual Info: VRSM VRRM VDRM V V 101 A 134 A 900 1300 1700 800 1200 1600 SK 100 KQ 08 SK 100 KQ 12 SK 100 KQ 16 SK 120 KQ 08 SK 120 KQ 12 SK 120 KQ 16 Symbol Conditions IRMS W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

sk 120 kq 16

Abstract: SK 100 KQ 12 Semikron Semitop 3 1200 A thyristor KQ12 semikron SK 100 125 T VV105 138AA
Contextual Info: VRSM VRRM VDRM V V 105 A 138 A 900 1300 1700 800 1200 1600 SK 100 KQ 08 SK 100 KQ 12 SK 100 KQ 16 SK 120 KQ 08 SK 120 KQ 12 SK 120 KQ 16 Symbol Conditions IRMS W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

Semikron Semitop sk 70 kq 12

Abstract: Semikron Semitop sk 70 kq Semikron Semitop sk 45 kq 12 Semikron Semitop sk 45 kq 16 SK 70 KQ 16 SEMIKRON 3SK45 Semikron sk 1 Semikron Semitop sk 45 kq sk 45 kq 12 Semikron Semitop sk 70 dt 08
Contextual Info: VRSM VRRM VDRM V V 47 A 72 A 900 1300 1700 800 1200 1600 SK 45 KQ 08 SK 45 KQ 12 SK 45 KQ 16 SK 70 KQ 08 SK 70 KQ 12 SK 70 KQ 16 Symbol Conditions W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

Semikron Semitop sk 70 kq 12

Abstract: Semikron Semitop 3 Semikron Semitop sk 70 kq w1c semikron TH 46 Thyristor SK 70 KQ 16 SEMIKRON sk 120 kq 16 Semikron Semitop sk 45 kq Semikron Semitop sk 45 kq 12 Semikron sk 75
Contextual Info: VRSM VRRM VDRM V V 46 A 71 A 900 1300 1700 800 1200 1600 SK 45 KQ 08 SK 45 KQ 12 SK 45 KQ 16 SK 70 KQ 08 SK 70 KQ 12 SK 70 KQ 16 Symbol Conditions W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms

semikron thyristor

Abstract: SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E
Contextual Info: Semikron Thyristor, Diode and IGBT Modules SEMIKRON invented the SEMIPACK¨, the beginning of a new industry standard for isolated power semiconductor modules. The SEMIKRON power modules represent quality, continued innovation and engineering know-how that reduce

FRMS

Contextual Info: SK *frm s SK 01 SK 04 SK 08 — S A ; l FAV - 1 , 2 A SK 12 S K 16 V rsm 120 V 400 V 800 V 1200 V 1600 V V rrm 120 V 400 V 800 V 1200 V 1600 V Ifav Tamb = 4 5 °c,sin .1 8 0 °e l 1,2 A 5A I frms I fcl (Tamb “ 45 °C) 1,0 A Ifsm (Tvi = 25 °C) 58 A (Tvi = 150 °C)

CHN 804 diode

Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
Contextual Info: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced

semikron sk 50 et 12

Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
Contextual Info: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen

mu24 dc

Abstract: SWT-2
Contextual Info: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration

Contextual Info: KENNEDY H S CORP M.S. KENNEDY CORP. m 51343D0 D O D O l ^ HIT « M S K b3E D INVERTING OPERATIONAL AMPLIFIER 8170 Thompson Road • Cicero, N.Y. 13039 738 (315) 699-9201 FEATURES: • Very Fast Settling Time • Very Fast Slew Rate • W ide Bandwidth •

SK 100 KQ 16

Contextual Info: 高周波用円筒セラミックコンデンサ セラチップ） TUBULAR TYPE CERAMIC CAPACITORS (FOR HIGH FREQUENCY OPERATING TEMP. K25CVJ85C 特長 FEATURES Y高周波特性に優れる Yインピーダンス特性が良好 Y等価直列抵抗(ESR)が小さい

LTD M250

Abstract: K7K85 sk 682 M
Contextual Info: 高周波用円筒セラミックコンデンサ セラチップ） TUBULAR TYPE CERAMIC CAPACITORS (FOR HIGH FREQUENCY OPERATING TEMP. K25CVJ85C 特長 FEATURES Y高周波特性に優れる Yインピーダンス特性が良好 Y等価直列抵抗(ESR)が小さい

10m01

Abstract: K4J30
Contextual Info: 高周波用円筒セラミックコンデンサ セラチップ） TUBULAR TYPE CERAMIC CAPACITORS (FOR HIGH FREQUENCY OPERATING TEMP. K25CVJ85C 特長 FEATURES Y高周波特性に優れる Yインピーダンス特性が良好 Y等価直列抵抗(ESR)が小さい

Contextual Info: 高周波用円筒セラミックコンデンサ セラチップ） TUBULAR TYPE CERAMIC CAPACITORS (FOR HIGH FREQUENCY OPERATING TEMP. K25CVJ85C 特長 FEATURES Y高周波特性に優れる Yインピーダンス特性が良好 Y等価直列抵抗(ESR)が小さい

BFP173

Abstract: BFP179 c 2274 t448
Contextual Info: 22 - 74/2 T R A N Z Y S T O R n-p-n V BFP179 SWW 1156-223 T ra n z y sto r k rz em o w y p la n a rn y sre d n ie j mOcy w ie lk ie j cz^stotliw osci. J e s t p rzezn aczo n y do sto so w an ia w sto p n iac h w y jsc io w ych o d b io rn ik ó w te le w iz ji k o lorow ej.

ECG1351

Abstract: G00522H ECG5013 ECG5013A
Contextual Info: 17E PHILIPS E C G INC ECG Se m ico n d u cto rs bbSBTEö G00522H =] ECG1351 25 W D u a l A F PO T -74 -0 5 -0 1 Features • Designed for hi-fi stereo amplifiers * Less than 0.2% harmonic distortion at full power level The ECG1351 is a self-contained high power

CA083E

Abstract: ca083
Contextual Info: Operational Amplifiers CA080, CA081, CA082, CA083, CA084 Series BiMOS Operational Amplifiers f f T Suffix 8-LEAD TO-5 H-1528 (E Suffix) 8-LEAD (MINI-DIP) W ith M O S /F E T Input, Composite B ipolar/M O S Output Single Amplifier CA080, CA081 Dual Amplifier CA082, CA083

Contextual Info: M X -CDM, INC. MiXed Signal ICs DATA BULLETIN MX469 1200 2400 4800bps MSK Modem Features Applications • Selectable Data Rates 1200/2400/4800bps • Radio and General Applications • Full-Duplex MSK • PMR/Cellular Signaling • RX and TX Bandpass Filters

tic 2250

Abstract: LA7570 IG234 2X40 tube cathodique philips tube cathodique culot
Contextual Info: PHILIPS QB 2/250 BEAU POWER TETRODE for use as A.F. or R.F. amplifier or oscillator TUBE AMPLIFICATEUR A FAISCEAUX pour utilisation en ampli­ ficateur B.F. ou H.F. ou oscillateur BÜNDELRÖHRE zur Verwendung als NF- oder HF-Verstärker oder Oszillator Cathode: thoriated tungsten

Contextual Info: IB G B Z /O Solid State Division 3-7 S~ ÔH16- 003925 Linear Integrated Circuits Monolithic Silicon CA080, CA081, CA082, CA083, CA084 Types &CA BiMOS Operational Amplifiers With M O S /F E T Input, Com posite B ipolar/M O S O utput T Suffix 8-LEAD TO-5 H-1528

STK power amplifier Dc 12v

Abstract: TA7613AP TA7613 AM 455KHz STK AMP 12V stk audio amplifier circuit diagram STK vcc12v STK audio amp 3D16A fm 10,7mhz
Contextual Info: "TOSHIBA i ELECTRONIC 90 972 47 TOSHIBA. 02 DE g ^ 0 ^ 7 2 4 7 ELECTRONIC 0017425 O 2È 174 25 o D T - 7 7 05-05 - TA7613AP AM/FM RADIO IC WITH POWER AMPLIFIER Unit in mm . TA7613AP is Suitable for Use in AM/FM Portable Radios or Main-fed AM/FM Clock Radios.

irc resistor T10

Abstract: STC9120C
Contextual Info: PF13 4 -0 3 STC9120C/M CMOS 1,200 bps MSK MODEM • Minimum External Parts Required • 1200 bps for Fuli-dupiex or Half-duplex System • Low Supply Current • On-chip Carrier Detector l DESCRIPTION The STC 9120C /M is a single chip CMOS 1 2 0 0 bps MSK MODEM for full-duplex or half-duplex radio com m uni­

ECG1361

Abstract: Philips Polyester Film Capacitors Philips KS capacitors
Contextual Info: PHILIPS E C G INC 17E ECG bt.S3T2ô 00DS24D 7 D ECG 1361 12 W Bridge BTL AF Power Amp Sem iconductors .134" (3.4)^- *- ,900"<22.86)- » [- ,630"(I6)- -| ^ -,0 6 7 1 Features • Power output: 12 W (typ) « Low number of external components:

XU13

Contextual Info: - f f iS iS * * « « 3 S t =l 7/U , B T L A N 7 1 O O S ( 2 mW, •. \ i ¥ y « r f « i S « ï : 1 - 3 V (1 .5 V) #M W ! : 150a ■ T'a, mmsmm cv«=i. s v, r l= i 5 o a) m m « > 1 1 « « * : 3m A ■ - 2 5°C) Æ fc m & 3 V 20 mA (T a ta # Vcc Icc