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    SK100 TRANSISTOR REPLACEMENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    ph 4148 zener diode detail

    Abstract: sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration
    Text: ZiLOG Design Concepts Z8 Application Ideas AN004901-0900 ZILOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ WWW.ZILOG.COM ZiLOG Design Concepts Z8 Application Ideas This publication is subject to replacement by a later edition. To determine whether a later edition


    Original     		PDF AN004901-0900 Z86E31 Z86E40 Z86E83 Z8E001 Z8PE001 ph 4148 zener diode detail sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration