SK3247 Search Results

Contextual Info: SK3247 P09TR0M C M M JSTRCS BEUEVES THE DATA ON TWS 0RMMM6 TO BE RELIABLE, SM CE THE TEOM CAL MFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH «FORMATION AT M S OHM DISCRETION AND RISK. POSITRONC MOUSTRCS ASSUMES NO RESPONSBUTY FOR RESULTS 06TAME0 OR OAMAGES

Contextual Info: SK3247 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)55 I(C) Max. (A)0.1 Absolute Max. Power Diss. (W)0.3 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.250 h(FE) Max. Current gain.500

SK3247

Contextual Info: SK3247 FO SITM M C N H JSnO ES BEUEVES THE DATA ON TTflS ORAWNG TO BE RELIABLE, SM C E THE TECHNICAL INFORMATION 6 OMEN FREE O F CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H B OWN DBCREIW N AND R 6K. POSITRONIC M D U SIM ES ASSUM ES NO RESPONSIBILITY FOR RESULTS OBTAINED OR DAMAGES

FC114N2-1565

Abstract: 2SK3247 94v0 ys FC112N2S-1565
Contextual Info: SK3247 P09TR0M C M M JSTRCS BEUEVES THE DATA ON TWS 0RMMM6 TO BE RELIABLE, SM CE THE TEOM CAL MFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH «FORMATION AT M S OHM DISCRETION AND RISK. POSITRONC MOUSTRCS ASSUMES NO RESPONSBUTY FOR RESULTS 06TAME0 OR OAMAGES

FC112N2S-15ES

Contextual Info: SK3247 DATE REV POTITRQNC IND W TR ES BELEyEB THE M M ON THIS □RNMNS TD K ISL IM L C . SM CE THE TECHNICAL n ra ra iA T D N a b v e n m e o f d -w rg c . t h e u s e r EM PLOTS SUCH INFORMATION AT H B OHN DISCRETIDN ANO R S K . PD 5IT m N C M 3U 5TRS3 ASSUUCS ND

FC114N2-1565

Contextual Info: P09TR0MC MMJSTRCS BEUEVES THE DATA ON TWS 0RMMM6 TO BE RELIABLE, SMCE THE TEOMCAL MFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH «FORMATION AT M S OHM DISCRETION AND RISK. POSITRONC MOUSTRCS ASSUMES NO RESPONSBUTY FOR RESULTS 06TAME0 OR OAMAGES

Contextual Info: POTITRQNC INDWTRES BELEyEB THE MM ON THIS □RNMNS TD K ISL IM L C . SM CE THE TECHNICAL n ra ra iA T D N a b v e n m e o f d -w rg c . t h e u s e r EM PLOTS SUCH INFORMATION AT HB OHN DISCRETIDN AND R S K . PD 5IT m N C M 3U 5TRS3 ASSUUCS ND R E 9P D N S n JT T FOR R E 5 U U 3 DBTMNCD OR

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

SK3440

Abstract: SK3261 SK3265 SK3275 SK3274 SK3260 SK3293 SK3297 SK3441 sk3299
Contextual Info: TMftttSON/ D I S T R I B U T O R E 3 B IPO LAR TRANSISTORS SflE D • ^ 0 5 ^ 8 7 3 0 0 0 4 3 1 ^ T 34 ■ TCSK com . Maximum Ratings Bieakdown Voltages Device Polarity & Material TCE Type Application 'complementary device type Device Power Dissipata Collector

SK3239

Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
Contextual Info: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous

Contextual Info: POSmtOMC MOUSTNES BELIEVES t h e data on 1HB DRAWING TO BE RELMBLE. SMCE THE TECHNICAL MFORMKDON IS OVEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RBK. POSITRON1C M DUSIRES A S S IlffS NO RESPONSE UTY FOR RESULTS OBIMNED OR DAMAGES