SK39 Search Results

Contextual Info: SK3905 Diodes Diode Multiplier/Tripler Circuits Per Package1 Diodes Per Circuit6 V RRM (V) Rep.Pk.Rev. Voltage35k V(FM) Max.(V) Forward Voltage200 @I(F) (A) (Test Condition) I(R) Max. (A) Reverse Current1.0u @V(R) (V) (Test Condition) P(D) Max. (W) Minimum Operating Temp (øC)

P14W

Abstract: TI25A SEAS
Contextual Info: SK399T P09TRONC INDU3TREB BELEVEB THE DATAONTHE M I E REV ID-tS 01 NC DRAWN Q TD K ISLI/MLC. SM CE TH E TECHNICAL n ra m M T D N a b v e n p r e c o f q -w rg e . t h c u s e r EMPLWB SUCHINFORMATIBNAT HB IMN DISCRETIDN ANO R B K . PD 5IT m N C M 3U 5TRS3 ASSUUCS ND

SK3978

Contextual Info: SK3978 DATE REV 10-11 01 NC 1 -1 8 A OS P09TR0M C IN D U SIR K S BELJEVES THE DATA ON TH E DRNMNG TO B E RELIABLE. SINCE THE TECHNICAL INFORMATION 6 GIVEN FREE OF CHARGE. THE USER EMPLOYS SUCH MFORMATION AT U S OWN D6CRETION AND R SK . POSffROMC M DUS1RES ASSUM ES NO

Contextual Info: SK3924 REVISION RECORD ECO 1 8 3 1 6 ECO 2 4 5 2 3 \MWi POSJTRONC MDUSIRE5 BEUEVES THE DMA ON THB DRAMNG TO BE RELIABLE, 9N CE THE TECHMCAL INFORMATION IS GIVEN FREE OF CHARGE. THE USER EMPLOYS SUCH MFORMMION AT H B OWN DISCRETION AND RISK. POSITRONS MOUSIRIES ASSUMES NO

Contextual Info: SK3991 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)25 V(BR)GSS (V)30 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Amb.

Contextual Info: SK3997 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.2.0k

Contextual Info: SK3904 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRON1CAND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

LC89562

Contextual Info: SANYO S EMI CONDUCT OR CORP S3E 7 = ^ 7 0 7 b QOlOEbS D 777 «TSAJ Ordering number: EN&3982 l ' S ’z - 1 3 C M O S LSI LC89582 No. SK3982 s a i ATIP Decoder \ y o for CD-WO and CD-MO Recorders Preliminary PINOUT OVERVIEW The LC89582 is an Absolute Time In Pre-groove

Contextual Info: SK3998 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.5k t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)

Contextual Info: SK3925 posrrcoM C in d u st w e s b e l e v e s t h e o m a o n t h e ORMMNG TO B E RELIABLE, S IN K THE TECHMCAL INFORMATION 6 OMEN FREE OF CHARGE. THE USER EMPLOYS SUCH MFDRMATION AT H B OWN D6CREIION AND RBK. POSITROMC M DUS1MES ASSUM ES NO RESPONSeiUTY FOR RESULTS OBTAINED OR DAMAGES

Contextual Info: SK3929 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: SK3948 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: SK3958 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: SK3979 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k

Contextual Info: SK3905 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRON1CAND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

Contextual Info: SK3986 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)

Contextual Info: SK3988 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)

Contextual Info: SK3987 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)

Contextual Info: SK3989 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)

SK6652/5552

Abstract: 5507 SK6631-5531 SK6502 SK3597/5455 SK6621/5521 SK6615/5515 sk6656 SK3598 SK6652
Contextual Info: THOMSON/ DISTRIBUTOR DTE D | TDabflTB □ □ □ 3 4 3 1 •= | 'V -Z S -\\ Silicon Controlled Rectifiers RMS Currant Ij RM S) (A) Surge Current It SIVI Peak Off State Voltage (A) 0.8 4 4 4 5 7 8 8 10 6 35 20 25 60 100 100 80 120 - - - SK3940/5481 VDr o m (V)

Contextual Info: SK3949 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

SK398

Contextual Info: SK3983 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SK3912 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)0.6 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

SK3925

Contextual Info: SK3925 REVISION RECORD EC O 1 8 3 1 6 EC O 2 4 5 2 3 DATEREV NC ff A FOSTROMC INDUSTNES BELEWES THE OATA ON TH E DRMMNG TO B E RELIABLE, S IN K THE TECHMCAL INFORMATION 6 GIVEN FREE OF CHARGE. THE USER EMPLOYS SUCH REFORMATION AT H B OWN 06CREIW N AND RBK. POSITTOMC MDUSTMES ASSUM ES NO