SKH00101AED Search Results

Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 1 4 Symbol VR Peak reverse voltage VRM Forward current (DC)

Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm M Di ain sc te on na tin nc ue e/ d For high speed switching For small current rectification 0.020±0.010 2 1 4 1 0.20±0.03 4 3 0.30±0.03 • Absolute Maximum Ratings Ta = 25°C

transistor marking N1

Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C

Schottky diode high reverse voltage

Abstract: diodes ir IR 50 MARKING 103 transistor marking N1
Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 3 0.30±0.03