SKM 121 R Search Results

Contextual Info: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56

Contextual Info: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V

Contextual Info: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150

Contextual Info: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C

skm 141

Contextual Info: fil3bb71 0GG3bl0 2T7 « S E K 6 S1E D SEMIKRON SEMIKRON INC Absolute Maximum and Minimum Ratings1^ S ym bol R a tin g Vsup Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature U n it V a lu e m in . Vj Visol Tease

SKM 181 R

Abstract: semikron semitrans skm 151 mosfet SKM 111 AR SKM 121 R SKM 300 CIRCUIT SKM151R nf 52 ar skm204a SKM 121 AR
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ AC, 1 min. DIN 40 040 DIN IEC 68 T.1 500 500 48 192 ± 20 625 –40 . +150 (125) 2 500 Class F 40/125/56 V V A A V W °C V 48

Contextual Info: fll3bb71 G003b54 5ET S1E D SEMIKRON SEMIKRON INC Absolute Maximum Ratings Symbol Values . 101 D 121 D Conditions ' VcES lc R g e = 20 k n T case = 2 5 /8 0 ICM T case = 2 5 /8 0 VcGR per Visol AC, 1 min DIN 4 0 0 4 0 DIN IEC 6 8 1200 V 1000 1200 V °C °C

Contextual Info: SIE D • Ö13bb71 DD03b3ö 3flb « S E K G SEMIKRON S E M I K R O N INC Absolute Maximum Ratings Symbol Conditions1 VcES VcGR lc Rge = 20 k f l Values .121 D . 101 D 1000 1000 V ges Ptot T], Tstg Visoi per IGBT, Tease = 25 °C AC, 1 min humidity DIN 40 040

Contextual Info: SKM 300GB174D Absolute Maximum Ratings Symbol Conditions IGBT 3 8 ) );< 38  @  3 SEMITRANSTM 3 Low Loss IGBT Modules SKM 300GB174D Preliminary Data Features                          ! 

skm 151 mosfet

Contextual Info: Section 5: SEMITRANS M Power MOSFET Power MOSFET Modules Type" V ds T=25 C Pd Rin,c C ase C ircuit SEMITRANS® M1 Case D 20 SEMITRANS^ M2 Cases D 48 / D 49 Cases D 42. 44 SEMITRANS® M3 = 25 C A m ii W °C /W 50 2 00z 3,5 700 0,18 D 15 S K M 1 0 1 R ZR

0555B

Contextual Info: SKM 300GB174D Absolute Maximum Ratings Symbol Conditions IGBT 3 8 ) );< 38  ?  3 SEMITRANSTM 3 Low Loss IGBT Modules SKM 300GB174D Preliminary Data Features                          ! 

Contextual Info: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e

skm 200 gb 122 d

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100

Contextual Info: SIE D • Ö13bb71 DGD3S7Ô Dfll « S E K G SEMIKRDN SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions 1 Rgs = 20 k£2 AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 130 390

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

b58 diode

Abstract: B59 diode
Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 130 390 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 130 390

Contextual Info: 5EMIKR0N Absolute Maximum Ratings S ym bol C o n d itio n s 1 Values 200 200 130 390 ±20 700 55 . . .+150 2 500 Class F 55/150/56 V ds V dgr Id Rgs = 20 k n I dm V qs Pd Tj, Tstg Visol humidity climate U nits AC, 1 min DIN 40 040 DIN IEC 68 T.1 V V A A V

diode D7

Abstract: SKM40GD123D b6u semikron b6u 500 semikron datasheet gal 120 05 td DIODE D16 diode d8 3
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8,Tcase=25°C AC, 1 min. DIN 40 040

Contextual Info: UNLESS OTIgHUSE NOTED REVISION AL DIMENSIONS ARE N NCHES ONE PLACE DECIMALS: ± .1 [ 3 ] TWO P U C E DECIMALS: ± .01 [ .3 ] TOLERANCES ARE: ANGLES THREE PLACE DECIMALS: ± .0 0 5 [.1 3 ] ± r FOUR PLACE DECIMALS: ± .0 0 2 0 [.0 5 1 ] TA BLE 1 MHAX—XXX—XXXX—0 8

P27AH

Abstract: DS60C320 TB801 ewm high precision dSMC
Contextual Info: DS80C320 DALLAS DS80C320 High-Speed Micro SEMICONOUCTOR FE A TU R E S PIN A S S IG N M E N T * 8OC32-Compatible - Pin-compatible - Standard 8051 instruction set - Four 8 -b it I/O ports Three 16-bit timer/counters - 256 bytes scratchpad RAM Multiplexed address/data bus

Contextual Info: L C D - I V H D 613901 Description The LCD-IV is the CMOS 4-bit single chip microcomputer which contains ROM, RAM, I/O, Timer/Event Counter and Control Circuit, Direct Drive Circuit for LCD on single chip. The LCD-IV is designed to drive LCD directly and perform

A42MXI6

Abstract: 1043U 144-40M SKM 181 c ST 1803 DHL 47-16 RD2 diode
Contextual Info: ^ c t e•"—TPl v3.0 40MX and 42MX Families FPGAs F e a tu re s • QML Certification H ig h C a p a c ity • Ceramic Devices Available to DSCC SMD • Single Chip ASIC Alternative E a s e o f In te g r a tio n • 2,000 to 36,000 Available Logic Gates

82801BAM

Abstract: intel Chipset CRB Schematics rj11 FOXCONN ferrite transformer power for power supply atx intel design guide intel pentium 4 motherboard schematic diagram pcb layout guide differential ohms stackup TRANSISTOR FS 2025 foxconn notebook motherboard MM3904
Contextual Info: R Intel 815EM Chipset Platform Design Guide October 2000 Document Number: 298241-001 ® Intel 815EM Chipset Platform R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 1 6 -M e g a b it Ram bus DRAM RDRAM™ is an e x tre m e ly -h ig h -s p e e d CM OS DRAM o rg a n iz e d as 2M w o rd s by 8 b its and cap a ble o f b u rs tin g up to 256 b yte s o f data at 2 ns per byte. The use o f R am bus S ig n a lin g