SKM 300 125 Search Results
SKM 300 125 Datasheets Context Search
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
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skm400gal125d
Abstract: SKM400GB125D
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400GB125D 400GAL125D 400GAR125D skm400gal125d SKM400GB125D | |
SKM 200 CIRCUITContextual Info: SKM 300 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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Contextual Info: SKM 300 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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Contextual Info: SKM 300 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3 |
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3K7/IE32 | |
Contextual Info: SKM 300GB123D Tc - 25 °C, unless otherwise specified Values Units Absolute Maximum Ratings Symbol Conditions IGBT V CES Tj = 25 °C Tj = 150 °C 1200 v Tcase = 2 5 ”C 300 A = 220 A 400 A ±20 V 10 MS Tcase = 25 °C 260 A = 180 A 400 A Tj = 1 5 0 °C 2200 |
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300GB123D 300GB123Dee CASED56 | |
Contextual Info: SKM 300 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
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T\datbl\B06-ig bt\300 gb126d | |
skm 50 gb 100 dContextual Info: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
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Contextual Info: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C 1200 V 300 A = 80 °C 210 A 400 A ±20 V 10 MS T case = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800 A 500 A -4 0 .+ 150 |
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300GB125D M300G125 XLS-24 XLS-23 CASED56 | |
UPS es 550
Abstract: SKM300GB123D
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300GB123D 300GB123D 300GAL123D 300GAR123D UPS es 550 SKM300GB123D | |
Contextual Info: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C Values 1200 V Tcase = 2 5 ° C 300 A = 80 °C 210 A 400 A ±20 V 10 MS Tcase = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800 |
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300GB125D XLS-24 M300G125 XLS-23 CASED56 | |
Contextual Info: SKM 300GB125D T c = 2 5 °C , u n le s s o th e r w is e s p e c ifie d Absolute Maximum Ratings Symbol Conditions IGBT | Values Units V CES Tj = 25 °C 1200 v !C Tj = 150 °C = 2 5 °C 300 A = 80 °C 210 A 400 A ±20 V 10 |JS Tease Tease *CRM lCRM- 2 x l Cnom |
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300GB125D | |
skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
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l3bb71 G0D37G2 10-E1 skm 200 gb 122 d SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122 | |
SKM 151F
Abstract: ac drives LS 600 M151A SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R
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M151A LS-52 SKM 151F ac drives LS 600 SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R | |
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SKM 300 CIRCUIT
Abstract: 2002C
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bi-directional switches IGBT
Abstract: skm 254 f gax-2 semikron case d 56 hardware Semikron SKM SEMIKRON 1200 V 95 A
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skm 40 gb 124 d
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
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3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits" | |
semikron skm 40
Abstract: SKM40
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Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 360 800 / 720 ± 20 2750 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A |
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SKM 151F
Abstract: skm 151 mosfet SKM151 SKM151A4R SKM 200 CIRCUIT SKM151F ac drives ls 600
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M151A LS-52 MARKETIN\FRAMEDAT\datbl\B05-mos\SKM151A4R SKM 151F skm 151 mosfet SKM151 SKM151A4R SKM 200 CIRCUIT SKM151F ac drives ls 600 | |
SKM 111 AR
Abstract: SKM 181 R semikron semitrans skm 151 mosfet SKM 300 CIRCUIT SKM111 SKM181 semikron semitrans 3 SKM120
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Semikron SKM 173D
Abstract: SK 200 GAR 125 SKM200GB173 B679
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SKM 300 CIRCUIT
Abstract: SKM 300 GB 123 D SKM 350 GAX
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b58 253
Abstract: SKM 111 AR SKM 121 R semikron semitrans SKM 121 AR M1 case
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