SKM 380 Search Results
SKM 380 Price and Stock
Samtec Inc MMSS-02-22-L-03.80-S-K-MRectangular Cable Assemblies Mini-Mate Cable Assembly |
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MMSS-02-22-L-03.80-S-K-M |
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Samtec Inc MMSD-02-20-L-13.80-S-K-MRectangular Cable Assemblies Mini-Mate Cable Assembly |
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MMSD-02-20-L-13.80-S-K-M |
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Samtec Inc MMSDT-15-24-L-38.00-S-K-MRectangular Cable Assemblies .100" Mini Mate(R) Double Row Discrete Wire Cable Assembly |
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MMSDT-15-24-L-38.00-S-K-M |
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SKM 380 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SKM 400GA173D Absolute Maximum Ratings Symbol Conditions IGBT ?IW& EI EI[$ ?¥W& M-^9 ,M<+16 ?'<./ SEMITRANSTM 4 IGBT Modules SKM 400GA173D SKM 400GA173D1S Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.> |
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400GA173D 400GA173D1S | |
Contextual Info: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& U-^9 ,U<+16 ?'<./ SEMITRANSTM 3 IGBT Modules SKM 150GB173D Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;.12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.> |
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150GB173D | |
Contextual Info: SKM 300GA123D Absolute Maximum Ratings Symbol Conditions IGBT ?IT& EI EIX$ ?ZT& M-¥9 ,M<+16 ?'<./ SEMITRANSTM 4 IGBT Modules SKM 300GA123D Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;.12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.> |
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300GA123D | |
semikron SKS
Abstract: B43875A5478 B43875 SKS 50F 9CN1 CN25 B6CI semikron SKpc 22 Three-phase inverter SEMISTACK
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10min B43875A5478 semikron SKS B43875 SKS 50F 9CN1 CN25 B6CI semikron SKpc 22 Three-phase inverter SEMISTACK | |
400V igbt dc to dc buck converter
Abstract: semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci
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F/400V P3/250F 400V igbt dc to dc buck converter semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci | |
skm 195 gb 125 dn
Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
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400GAL125D 101GD066HDS 151GD066HDS 201GD066HDS 202GB066HDs 302GB066HDs 402GB066HDs SEMIX171KH16S SEMIX191KD16S SEMIX241DH16S skm 195 gb 125 dn IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107 | |
Contextual Info: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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Contextual Info: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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B43875
Abstract: B43875A5228 semikron SKHI 123D SKS 25F semikron SKm 50 GB 123D semikron SKS B6CI 16 V12 IGBT J19 Connector SKHI B4387
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10min B43875A5228 B43875 semikron SKHI 123D SKS 25F semikron SKm 50 GB 123D semikron SKS B6CI 16 V12 IGBT J19 Connector SKHI B4387 | |
Contextual Info: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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Contextual Info: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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Contextual Info: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
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IGBT SKM 145 GB 063 DN
Abstract: M145GB063DN
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3K7/IE32 IGBT SKM 145 GB 063 DN M145GB063DN | |
Semikron SKM 145 GB 124 DN
Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
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3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits | |
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Contextual Info: SKM 145 GB 128 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
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T\datbl\B06-ig bt\145 gb128d | |
skm 50 gb 100 dContextual Info: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1 |
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3K7/IE32 skm 50 gb 100 d | |
skm 195 gb 125 dn
Abstract: NPT-IGBT SKM skm195gal
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3K7/IE32 skm 195 gb 125 dn NPT-IGBT SKM skm195gal | |
AX-52 diodeContextual Info: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& M-^9 ,M<+16 ?'<./ M3 V PR ,ZQ6 WI + V N ;< M%TX[JME%7 _ M<+1 IGBT Modules EG EG[$ M3 V PR ,ZQ6 WI +) V N ;< EG&$ +) V NQ ;<b <' Ub M^ V NRQ WI EG EG[$ M3 V PR ,ZQ6 WI +) V N ;< |
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200GB173D 200GB173D1 200GAL173D 200GAR173D AX-52 diode | |
Contextual Info: SKM 200GB173D M3 V PR WI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IX& MY V PR WI EI MY V NRQ WI NSQQ ? PPQ J M30<2 V [Q WI NRQ J OQQ J ^ PQ ? NQ b< M30<2 V PR WI NRQ J M30<2 V [Q WI NQQ J OQQ J MY V NRQ WI NcRQ J M30<2 V PR WI |
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200GB173D 200GB1+ | |
Contextual Info: SKM 150GB123D R3 S NT UI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IV& RW S NT UI EI RW S MTO UI MNOO ? MTO J R30<2 S YO UI MMO J NOO J ¥ NO ? MO `< R30<2 S NT UI MTO J R30<2 S YO UI MOO J NOO J RW S MTO UI MMOO J R30<2 S NT UI |
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150GB123D | |
f422Contextual Info: SKM 75GD123D L3 Q RS TI9 * /2; .+824=';2 ; 23'F'25 Absolute Maximum Ratings Symbol Conditions IGBT >IU& LV Q RS TI DI LV Q NSX TI DI[$ NRXX > YS P L30;2 Q ZX TI SX P NXX P ] RX > LV Q NRS TI NX a; L30;2 Q RS TI YS P L30;2 Q ZX TI SX P NXX P SSX P NXX P E cX bbbd NSX |
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75GD123D 75GD123DL 75GDL123D f422 | |
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C |
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Contextual Info: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 V cG R R ge = 20 lc Tease = 2 5 / 6 5 °C 190 / 150 IcM Tease = 2 5 / 6 5 °C ; tp = 1 ms 380 / 300 ±20 V ges Ptot pe r IG B T , T oase = 2 5 °C 800 - 4 0 . + 1 5 0 1 2 5 ) |
OCR Scan |
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Contextual Info: s e MIKRO n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 1200 380 / 300 760 / 600 ± 20 1650 -4 0 . +150 125) 2500 V cE S V cG R lc IcM = 20 Toase = 25/65 °C Toase = 25/65 °C; tp = 1 ms R ge V ges Ptot Tj, (Tstg) Vsol humidity climate |
OCR Scan |