SKM 40 GB 124 D Search Results
SKM 40 GB 124 D Datasheets Context Search
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SKM 400 gal 124 IGBT
Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
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Semikron SKM 145 GB 124 DN
Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
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3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits | |
skm 195 gb 125 dn
Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
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3K7/IE32 skm 195 gb 125 dn SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124 | |
LB 124D
Abstract: skm 40 gb 124 d 400G124 the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si DIODE LS15
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Contextual Info: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1 |
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L124D GAR124D | |
300GB
Abstract: IGBT inverter calculation FOR A UPS
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skm 200 gb 124 dContextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 290 / 200 |
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Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100 |
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145GB124DContextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 190 / 145 |
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LS183
Abstract: XLS-10 75GB124D
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300G124
Abstract: RG3300
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skm 200 gb 122 dContextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100 |
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ac drives LS 600
Abstract: IGBT inverter calculation FOR A UPS 6075A 50G12
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ac drives ls 600
Abstract: *semibox M150G
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LB 124 dContextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 290 / 200 |
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skm195gal
Abstract: SEMIKRON book
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Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C |
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skm 40 gb 124 d
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
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3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits" | |
SKM 300 CIRCUIT
Abstract: SKM 400 gal 124 IGBT D 145 SKM 300 GB 123 D SKM 600 gb semikron skm 150 gb 123
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Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10 |
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Contextual Info: s e MIKROn Absolute Maximum Ratings Symbol Units VcES lc = 20 k£2 T c a s e = 25/80 °C ICM Tcase VcGR R ge = 25/80 °C; tp = 1 ms V g es P fo t p e r IG B T , Tcase = 25 °C T j, T s tg V sol humidity climate Values Conditions ' AC, 1 min. DIN 40 040 |
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Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions Values Units 1 1200 1200 2 90 / 200 V V A 5 80 / 400 ±20 1350 - 4 0 . + 150 125) 2500 Class F 4 0 /12 5 /5 6 A V W °C V 1 9 5 /1 3 0 5 80 / 400 1450 10 500 A A A A2s V cE S lc R Ge = 20 T oase = 25 /85 °C |
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SKM 195 Gb 123 IGBT
Abstract: 9v DC motor with reverse and forward
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Contextual Info: s e MIKRO n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 1200 380 / 300 760 / 600 ± 20 1650 -4 0 . +150 125) 2500 V cE S V cG R lc IcM = 20 Toase = 25/65 °C Toase = 25/65 °C; tp = 1 ms R ge V ges Ptot Tj, (Tstg) Vsol humidity climate |
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