SKM 50 GB 100 D Search Results
SKM 50 GB 100 D Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| SMJ320C25-50GBM |
|
Digital Signal Processors 68-CPGA -55 to 125 |
|
|
|
| DAO3W3P543M40LF |
|
D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3W3 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. |
|
||
| DAL3V3P543G30LF |
|
D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3V3 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 1.6mm PCB Thickness. |
|
||
| DAV3V3P543H40LF |
|
D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3V3 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. |
|
||
| DCV8W8P500G40LF |
|
D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 1.6mm PCB Thickness. |
|
SKM 50 GB 100 D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56 |
OCR Scan |
13bb71 | |
|
Contextual Info: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V |
OCR Scan |
||
skm 200 GB 12 V
Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
|
Original |
||
|
Contextual Info: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms |
OCR Scan |
||
|
Contextual Info: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150 |
OCR Scan |
13bb71 00D3bMb Characteristic21 | |
|
Contextual Info: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C |
OCR Scan |
l3bb71 DG03bb5 | |
skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
|
OCR Scan |
123D1 skm 152 ga 123 semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56 | |
skm 40 gb 124 d
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
|
Original |
3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits" | |
Semikron SKM 145 GB 124 DN
Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
|
Original |
3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits | |
IGBT SKM 145 GB 063 DN
Abstract: M145GB063DN
|
Original |
3K7/IE32 IGBT SKM 145 GB 063 DN M145GB063DN | |
GB125D
Abstract: Dt10 gb125
|
Original |
3K7/IE32 GB125D Dt10 gb125 | |
skm 195 gb 125 dn
Abstract: NPT-IGBT SKM skm195gal
|
Original |
3K7/IE32 skm 195 gb 125 dn NPT-IGBT SKM skm195gal | |
Semikron SKM
Abstract: GAL 200 gb
|
Original |
3K7/IE32 Semikron SKM GAL 200 gb | |
SKM 75 GB 123
Abstract: semikron skm 150 gal SKM 75 GAL 123 IGBT skm 22 gal 123
|
Original |
||
|
|
|||
semikron SKm GAL 123D
Abstract: CASED61
|
OCR Scan |
||
|
Contextual Info: SKM 300 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3 |
Original |
3K7/IE32 | |
|
Contextual Info: SKM 145 GB 174 DN . $EVROXWH 0D[LPXP 5DWLQJV 9DOXHV 6\PERO &RQGLWLRQV 9& 6 9&*5 ,& ,&0 9*(6 3WRW 7M 7VWJ 9LVRO KXPLGLW\ FOLPDWH 8QLWV 5*( NΩ 7FDVH & 7FDVH & WS SHU ,*%7 7FDVH PV & $& PLQ IEC 60721-3-3 ,(& 7 |
Original |
||
|
Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10 |
OCR Scan |
||
skm 195 gb 125 dn
Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
|
Original |
3K7/IE32 skm 195 gb 125 dn SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124 | |
SKM 400 gal 124 IGBT
Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
|
Original |
||
|
Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Rge = 20 k£2 T c a s e = 25/80 °C T c a s e = 25/80 °C; tp = 1 ms P to t p e r IG B T , Tcase Units = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc |
OCR Scan |
||
|
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC |
Original |
||
skm 195 gb 125 dnContextual Info: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
Original |
M195GB126DN skm 195 gb 125 dn | |
|
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC |
Original |
||