SKM 600 GB Search Results
SKM 600 GB Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SKM600GB066D |
|
Trench IGBT Modules | Original | 952.79KB | 6 | ||
| SKM600GB126D |
|
SEMITRANS 3 - Trench IGBT Module | Original | 664.54KB | 4 |
SKM 600 GB Price and Stock
SEMIKRON SKM600GB126DIgbt Module, 1.2Kv, 660A, Semitrans 3; Continuous Collector Current:660A; Collector Emitter Saturation Voltage:2.12V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM600GB126D |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SKM600GB126D | Bulk | 12 |
|
Buy Now | ||||||
|
SKM600GB126D | Bulk | 1 |
|
Get Quote | ||||||
|
SKM600GB126D | 2 |
|
Get Quote | |||||||
|
SKM600GB126D | 1 |
|
Get Quote | |||||||
SEMIKRON SKM 600 GB 066 DIgbt Power Module |Semikron SKM 600 GB 066 D |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SKM 600 GB 066 D | Bulk | 12 |
|
Buy Now | ||||||
SEMIKRON SKM600GB066DSKM600GB066D, IGBT Halfbridge Module, N-channel, Dual, 760A 600V, 7-Pin D 56 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SKM600GB066D | Bulk | 1 |
|
Get Quote | ||||||
|
|
SKM600GB066D | 1 |
|
Get Quote | |||||||
SEMIKRON SKM600GB07E3 22895570Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SKM600GB07E3 22895570 | 1 |
|
Get Quote | |||||||
SEMIKRON SKM600GB066D 21915620Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SKM600GB066D 21915620 | 1 |
|
Get Quote | |||||||
SKM 600 GB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SKM 600 gb
Abstract: semikron IGBT 400A 600v
|
Original |
||
skm 195 gb 125 dn
Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
|
Original |
400GAL125D 101GD066HDS 151GD066HDS 201GD066HDS 202GB066HDs 302GB066HDs 402GB066HDs SEMIX171KH16S SEMIX191KD16S SEMIX241DH16S skm 195 gb 125 dn IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107 | |
|
Contextual Info: SKM 600 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
Original |
||
skm400gal125d
Abstract: SKM400GB125D
|
Original |
400GB125D 400GAL125D 400GAR125D skm400gal125d SKM400GB125D | |
UPS es 550
Abstract: SKM300GB123D
|
OCR Scan |
300GB123D 300GB123D 300GAL123D 300GAR123D UPS es 550 SKM300GB123D | |
GB125D
Abstract: Dt10 gb125
|
Original |
3K7/IE32 GB125D Dt10 gb125 | |
Semikron SKM 145 GB 124 DN
Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
|
Original |
3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits | |
skm 40 gb 124 d
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
|
Original |
3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits" | |
IGBT SKM 145 GB 063 DN
Abstract: M145GB063DN
|
Original |
3K7/IE32 IGBT SKM 145 GB 063 DN M145GB063DN | |
skm 195 gb 125 dn
Abstract: NPT-IGBT SKM skm195gal
|
Original |
3K7/IE32 skm 195 gb 125 dn NPT-IGBT SKM skm195gal | |
skm 50 gb 100 dContextual Info: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1 |
Original |
3K7/IE32 skm 50 gb 100 d | |
skm 195 gb 125 dn
Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
|
Original |
3K7/IE32 skm 195 gb 125 dn SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124 | |
|
Contextual Info: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
Original |
||
IEC 974-1
Abstract: SKM 400
|
Original |
||
|
|
|||
|
Contextual Info: SKM 300 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3 |
Original |
3K7/IE32 | |
Semikron SKM
Abstract: GAL 200 gb
|
Original |
3K7/IE32 Semikron SKM GAL 200 gb | |
skm 50 gb 100 dContextual Info: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
Original |
||
semikron IGBT 150A 600vContextual Info: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
Original |
T\datbl\B06-ig bt\200 gb128d semikron IGBT 150A 600v | |
semikron IGBT 75a 600v moduleContextual Info: SKM 100 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
Original |
||
RU diode
Abstract: 128D
|
Original |
||
|
Contextual Info: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
Original |
||
skm 195 gb 125 dnContextual Info: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C |
Original |
M195GB126DN skm 195 gb 125 dn | |
M200G128Contextual Info: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C |
Original |
M200G128 XLS-13 | |
|
Contextual Info: SKM 145 GB 174 DN . $EVROXWH 0D[LPXP 5DWLQJV 9DOXHV 6\PERO &RQGLWLRQV 9& 6 9&*5 ,& ,&0 9*(6 3WRW 7M 7VWJ 9LVRO KXPLGLW\ FOLPDWH 8QLWV 5*( NΩ 7FDVH & 7FDVH & WS SHU ,*%7 7FDVH PV & $& PLQ IEC 60721-3-3 ,(& 7 |
Original |
||