SKM200 Search Results
SKM200 Datasheets (52)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SKM200GA123D |
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SEMITRANS M - IGBT Modules | Original | 1.7MB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GA123D |
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SEMITRANS IGBT Modules New Range | Scan | 108.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL123D |
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SEMITRANS M - IGBT Modules | Original | 1.7MB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL123D |
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SEMITRANS IGBT Modules New Range | Scan | 108.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL125D |
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Ultra Fast IGBT Modules | Original | 817.16KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL125D |
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SEMITRANS 3 - Ultra Fast IGBT Modules | Original | 659.19KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL126D |
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Trench IGBT Modules | Original | 767.51KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL163D |
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SEMITRANS IGBT Modules New Range | Scan | 108.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL173D |
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SEMITRANS M - IGBT Modules | Original | 2.54MB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL173D |
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IGBT Modules | Original | 721.17KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAL176D |
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SEMITRANS M - IGBT Modules | Original | 2.08MB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAR123D |
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SEMITRANS M - IGBT Modules | Original | 1.7MB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAR123D |
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SEMITRANS IGBT Modules New Range | Scan | 108.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAR125D |
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SEMITRANS 3 - Ultra Fast IGBT Modules | Original | 659.19KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SKM200GAR125D |
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Ultra Fast IGBT Modules | Original | 817.16KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAR163D |
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SEMITRANS IGBT Modules New Range | Scan | 108.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAR173D |
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SEMITRANS M - IGBT Modules | Original | 2.54MB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAR173D |
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IGBT Modules | Original | 721.17KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAX173D |
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IGBT Module | Original | 2.08MB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKM200GAY173D |
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IGBT Module | Original | 2.08MB | 8 |
SKM200 Price and Stock
IDEC Corporation KL9Z-SK-M2001SPARE KEY FOR KL SERIES |
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KL9Z-SK-M2001 | Bulk | 1 |
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KL9Z-SK-M2001 |
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KL9Z-SK-M2001 |
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KL9Z-SK-M2001 |
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SEMIKRON SKM200GB125DIgbt, Half Bridge, 1.2Kv, 200A, Module; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:3.3V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM200GB125D |
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SKM200GB125D | Bulk | 4 | 1 |
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SKM200GB125D | Bulk | 1 |
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SKM200GB125D | 1 |
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SKM200GB125D | 48 |
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SEMIKRON SKM200GB12E4Igbt Module, 1.2 Kv, 313 A, Module; Continuous Collector Current:313A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM200GB12E4 |
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SKM200GB12E4 | Bulk | 1 |
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SKM200GB12E4 | Bulk | 1 |
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SKM200GB12E4 | 1 |
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SKM200GB12E4 | 11 |
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SEMIKRON SKM200GB12T4Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM200GB12T4 |
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SKM200GB12T4 | Bulk | 1 |
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SKM200GB12T4 | 1 |
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SKM200GB12T4 | 6 |
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SEMIKRON SKM200GM12T4Igbt Module; Continuous Collector Current:314A; Collector Emitter Saturation Voltage:1.2Kv; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:800Mv; Transistor Mounting:Panel Rohs Compliant: Yes |Semikron SKM200GM12T4 |
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SKM200GM12T4 | Bulk | 12 |
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SKM200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GAL12E4 | |
SKM200GB12V
Abstract: IGBT K 40 T 1202 SKM200GB-12V SKM2
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SKM200GB12V SKM200GB12V IGBT K 40 T 1202 SKM200GB-12V SKM2 | |
IGBT K 40 T 1202
Abstract: SKM200GB12V skm20
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SKM200GB12V IGBT K 40 T 1202 SKM200GB12V skm20 | |
Contextual Info: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 304 A Tc = 80 °C 229 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C 172 |
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SKM200GB12V | |
Contextual Info: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GAL12T4 | |
Contextual Info: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 |
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SKM200GB12T4 cle009 | |
Contextual Info: SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SKM200GAR12E4 | |
Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A |
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SKM200GAL12E4 | |
Contextual Info: SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GAR12E4 SKM200GAR12E4 | |
SKM200GBD126
Abstract: SKM200GBD126D 200gb SKM200GBD
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SKM200GBD126D 200GBD126D SKM200GBD126 SKM200GBD126D 200gb SKM200GBD | |
SKM200GAL12T4Contextual Info: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SKM200GAL12T4 Isol009 SKM200GAL12T4 | |
SKM200GB12E4
Abstract: skm200gb1-2e4 SKM200GB-12E4
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SKM200GB12E4 SKM200GB12E4 skm200gb1-2e4 SKM200GB-12E4 | |
Contextual Info: SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GB12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GB12E4 | |
Contextual Info: SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A |
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SKM200GB12E4 CAL009 | |
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diode 331
Abstract: skm200gal12e4 switched reluctance motor IGBT switched reluctance motor
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SKM200GAL12E4 VCEs009 diode 331 skm200gal12e4 switched reluctance motor IGBT switched reluctance motor | |
SKM200GB12T4
Abstract: Semitrans 314
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SKM200GB12T4 SKM200GB12T4 Semitrans 314 | |
Contextual Info: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GB12T4 | |
Contextual Info: SKM200GM12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GM12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GM12T4 | |
Contextual Info: SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GAR12E4 | |
SKM200GB12T4Contextual Info: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 |
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SKM200GB12T4 SKM200GB12T4 | |
SKM200GAL12T4
Abstract: diode 331
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SKM200GAL12T4 SKM200GAL12T4 diode 331 | |
Contextual Info: SKM200GAR101D Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.25k Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case0.1 |
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SKM200GAR101D | |
Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A |
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SKM200GAL12E4 | |
Contextual Info: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 237 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C |
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SKM200GB12V E6353Fig. |