SL DIODE MARKING COD Search Results

DIODE marking Sl

Abstract: marking code SJ DIODE marking code SJ SD101AW SD101AWS SD101BWS SD101CWS
Contextual Info: SD101AWS.SD101CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN Features • Low Forward Voltage 1 Cathode 2 Anode 2 1 Top View Marking Code: SD101AW S "SJ" SD101BWS "SK" SD101CWS "SL" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

DIODE marking code SJ

Abstract: marking code Sk transistors SD101AW SD101AWS SD101BWS SD101CWS
Contextual Info: SD101AWS.SD101CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN Features • Low Forward Voltage 1 Cathode 2 Anode 2 1 Top View Marking Code: SD101AW S "SJ" SD101BWS "SK" SD101CWS "SL" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

DIODE marking Sl

Abstract: DIODE marking L12 TVS DIODE Vbr SL05 SL24 sl diode diode marking code sl TVS 15 Diode 7SL05 marking code L05 SOT 23
Contextual Info: SL05 Low Capacitance TVS Diode For High-Speed Data Interfaces thru SL24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com Revised - February 15, 1999 DESCRIPTION The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

DIODE marking Sl

Abstract: SL05 SL24 sl diode SL15
Contextual Info: SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

DIODE marking Sl

Abstract: DIODE marking L12
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

Contextual Info: _ ? ^ r i U JJ|^ l T r P Today’s Results.Tomorrow1! Vision I I •■ Revised - February 15, 1999 Low Capacitance TVS Diode For High-Speed Data Interfaces TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SL series of TVS arrays are designed to protect

DIODE marking L12

Abstract: SL05 SL24 DIODE marking Sl
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

SL05

Abstract: SL24 SL05.TCT
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

DIODE marking Sl

Abstract: SL05 SL24 12v6
Contextual Info: SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

DIODE marking Sl

Abstract: SL15.TCt
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

Contextual Info: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode thru SL24 TEL805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over

Contextual Info: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode th ru SL24 TE L805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over

kl6 r4

Abstract: S4 DIODE schottky sot 23 B5819WS S4 BAS70WT MARKING S4 diode schottky L47C SOT23 marking sk SOD-323 marking R8 sot 23 marking code s7 KL8 SOT-23
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Marking Code Peak Reverse Voltage PRV V Maximum Reverse Current IR µA Maximum Forward Voltage Drop VF @ IF mV mA Surge Current Capacitance IFSM mAdc CTOT pF 1000 1000 1000 1000

DIODE marking L12

Contextual Info: SL05 SEMTECH Low Capacitance 300 Watt Surface Mount TVS Diode TEL: 805-498-2111 D E SC R IP T IO N The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over voltages caused by electrostatic discharge ESD ,

marking CODE SA2

Abstract: SA2 diode
Contextual Info: SM BO 2835/36 Silicon Sw itching Diode Array • For high-speed sw itching applications • Comm on anode Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SM B D 2 8 3 5 SM B D 28 36 SA3 SA2 upon request upon request

ERB83-006

Abstract: marking JSs s1nl R20 marking JE55
Contextual Info: ERB83-006 2A : Outline Drawings S C H O TTK Y BARRIER DIODE 1 Features • <svF : Marking Low Vi S 7 - 3 - K : It Super high speed switching. Color code : >iu<- High reliability by planer design. Abridged type name * v-Kt - î C a th o d e m o rk • £ ! & : Applications

BSS10

Contextual Info: SIEMENS SN 7000 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Pin 1 Pin 2 D CA Type b 0.25 A SN 7000 60 V Type SN 7000 SN 7000 SN 7000 Ordering Code Q67000-S062 Q62702-S638 Q62702-S637 ^DS(on)

smd diode schottky code marking SJ

Abstract: Diode SMD SJ Diode SMD SJ 05 Diode SMD SJ 15 Diode SMD SJ 7 Diode SMD SJ 01 Diode SMD SJ 12 Diode type SMD marking SJ smd diode schottky code marking SL Diode SMD SJ 02
Contextual Info: Schottky Barrier Diode SMD Diodes Specialist CDBW120-G Thru. CDBW140-G Forward current: 1.0A Reverse voltage: 20 to 40V RoHS Device Features SOD-123 -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications. 0.152 3.85

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode code g3

Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode S6

Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode S4

Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode g6

Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings