SL-150 DIODE Search Results

c1247

Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

Contextual Info: B u lle tin 12037 Internatiçnal E S Rectifier 4 sl R , 1 s e r ie s sok / l / k s (R) STANDARD RECOVERY DIODES Stud Version Features 150 A • Alloy diode ■ High current carrying capability ■ High voltage ratings up to 1000V ■ High surge current capabilities

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

SLC11

Abstract: slce8 SLCE15A transient supressor-diode SLC10 SLC10A SLC11A SLC90 SLCE10A SLCE11
Contextual Info: SENICON CONPONENTS INC 2flE D 0135157 Q0G0fl03 r - t i - 2 -3 7 SILICON TRANSIENT SOR DIODES DESCRIPTION This specification sheet defines a series of low-capacitance silicon transient suppressors for the protection of A C signal lines. This series employs a standard suppressor in series

HE8807CL

Abstract: XP20W
Contextual Info: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero­ junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL

Contextual Info: HE8807SG/SL/CL/FL GaAIAs IRED Description The H E8807SG /SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero­ junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity H E8807SL/CL/FL

DIODE marking Sl

Abstract: SL05 SL24 sl diode SL15
Contextual Info: SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

DIODE marking Sl

Abstract: DIODE marking L12 TVS DIODE Vbr SL05 SL24 sl diode diode marking code sl TVS 15 Diode 7SL05 marking code L05 SOT 23
Contextual Info: SL05 Low Capacitance TVS Diode For High-Speed Data Interfaces thru SL24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com Revised - February 15, 1999 DESCRIPTION The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

DIODE marking Sl

Abstract: DIODE marking L12
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

DIODE marking Sl

Abstract: SL05 SL24 12v6
Contextual Info: SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

Contextual Info: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode thru SL24 TEL805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over

Contextual Info: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode th ru SL24 TE L805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over

DIODE marking L12

Abstract: SL05 SL24 DIODE marking Sl
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

SL05

Abstract: SL24 SL05.TCT
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

Contextual Info: _ ? ^ r i U JJ|^ l T r P Today’s Results.Tomorrow1! Vision I I •■ Revised - February 15, 1999 Low Capacitance TVS Diode For High-Speed Data Interfaces TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SL series of TVS arrays are designed to protect

Contextual Info: Light Emitting Diodes LN41YPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage

SL 100 NPN Transistor

Abstract: T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC
Contextual Info: e TRANSYS BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE m CTKONICS LIM IT E D Designed Specifically for High Frequency Electronic Ballasts D PACKAGE TOP VIEW Integrated Fast trr Anti-parallel Diode, Enhancing Reliability B l= Diode trr Typically 500 ns

Contextual Info: Light Emitting Diodes LN31GPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage

mp4012

Contextual Info: MP4012 High-Brightness, High-Current Accuracy WLED Controller The Future of Analog IC Technology DESCRIPTION FEATURES The MP4012 is a current mode controller designed for driving the high brightness Light Emitting Diodes LEDs from extremely wide input voltage 8V~55V. It can be used in Boost,

diode SR 34

Abstract: CD pickup laser diode sony CD Laser pickup SLD104AV sr pcd power
Contextual Info: SLD104AV GaAlAs Laser Diode Description The SLD104AV is a low noise GaAlAs laser diode developed for CD. M-260 Features • High temperature operation • Low noise • Small package φ 5.6 mm Applications • Pickup for CD players Structure • GaAlAs double hetero structured laser diode

SLD104AV

Abstract: low noise, 780 nm, 7 mw CD pickup laser diode
Contextual Info: SLD104AV GaAlAs Laser Diode Description The SLD104AV is a low noise GaAlAs laser diode developed for CD. M-260 Features • High temperature operation • Low noise • Small package φ 5.6 mm Applications • Pickup for CD players Structure • GaAlAs double hetero structured laser diode

SLD104U

Abstract: SLD104AU SLD-104U M259
Contextual Info: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN41YPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN31GPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current