SL003 Search Results

D008

Abstract: GR-1089-CORE TISP3072F3 TISP3082F3 3082f3
Contextual Info: TISP3072F3,TISP3082F3 LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP30xxF3 LV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3072F3 ‘3082F3 VDRM V(BO)

Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS

Contextual Info: TISP7240F3, TISP7260F3, TISP7290F3, TISP7320F3, TISP7380F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region

Contextual Info: TISP1072F3,TISP1082F3 DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxF3 Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘1072F3 ‘1082F3 D Package Top View

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP1072F3,TISP1082F3 *R DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxF3 Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

Contextual Info: TISP7125F3 THRU TISP7180F3, TISP7240F3 THRU TISP7380F3 MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP7xxxF3 MV, HV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP3240F3, TISP3260F3, TISP3290F3,TISP3320F3,TISP3380F3 HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxF3 HV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage

NE5517

Abstract: transconductance amplifier SL00307 LM13600 LM13600 datasheet philips kt SL00315 NE5517N Operational Transconductance Amplifier
Contextual Info: INTEGRATED CIRCUITS NE5517/NE5517A Dual operational transconductance amplifier Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductor Product data Dual operational transconductance amplifier

T1 SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor transistor BU 102
Contextual Info: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability FEBRUARY 1994 - REVISED SEPTEM BER 1997

sp7290

Abstract: sp718 SP7250
Contextual Info: TISP7070H3SL THRU TISP7095H3SL, TISP7125H3SL THRU TISP7220H3SL TISP7250H3SL THRU TISP7400H3SL TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS MARCH 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS ● Ion-Implanted Breakdown Region

Contextual Info: TISP7072F3, TISP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● d.cIon-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge T 1

2180f3

Abstract: 2180F TISP2180 PE-60 TISP2125F3 TISP2150F3 TISP2180F3 2125F3
Contextual Info: TISP2125F3, TISP2150F3, TISP2180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage

NE5534 Philips

Abstract: NE5534AN NE5534AD NE 5534 TL083 5534A NE5534N ne5534 application note NE5534 applications NE5534D
Contextual Info: INTEGRATED CIRCUITS NE/SA/SE5534/5534A Single low noise operational amplifier Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data Single low noise operational amplifier

GR-1089-CORE

Abstract: TISP3600F3 TISP3600F3SL TISP3700F3 TISP3700F3SL 1200 A thyristor
Contextual Info: TISP3600F3, TISP3700F3 DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3600F3, TISP3700F3 IEEE Std 802.3 LAN and MAN Applications SL Package Top View Ion-Implanted Breakdown Region Precise and Stable Voltage Terminals T&G, R&G T&R Device VDRM V V(BO)

K 3115

Abstract: add 3180 trigger impulse generator GR-1089-CORE TISP3070H3 TISP3070H3SL TISP3080H3 TISP3095H3 TISP3115H3SL TISP3125H3SL
Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL, TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SL Overvoltage Protector Series TISP3xxxH3SL Overview This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The

Contextual Info: TISP2072F3, TISP2082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rig h t 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEM BER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage

Contextual Info: TISP7072F3, TISP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage

2180f3

Abstract: PE-60 TISP2125F3 TISP2150F3 TISP2180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSOR E1324
Contextual Info: TISP2125F3, TISP2150F3, TISP2180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

PE-60

Abstract: TISP1072F3 TISP1082F3 MD1X
Contextual Info: TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SEPTEMBER 1993 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge D PACKAGE

Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL, TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SL Overvoltage Protector Series TISP3xxxH3SL Overview This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The

Contextual Info: TISP3125F3, TISP3150F3, TISP3180F3 MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP31xxF3 MV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3125F3

Contextual Info: TISP7072F3,TISP7082F3 LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP70xxF3 LV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages V(BO) VDRM Device V V ‘7072F3 58 72 ‘7082F3

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP7072F3,TISP7082F3 LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP70xxF3 LV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages

20/SP3070H3

Abstract: SP3070H3 SP3350H3
Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS ● Ion-Implanted Breakdown Region