SM 3117 N Search Results

LM 3117

Abstract: SM 3117 N LA7391A LA7384 LA7333 la7400m LA7372 LA7297 LA7332 LA7621
Contextual Info: Continued fron; previous page Device Package Number of Drawing pins and Type number configuration LA7285M MFP 24S 3112 LA7293M MFP 8 3032B LA7294 SIP 30Z LA7295 SIP LA7296 SIP LA7297 LA7311 Recommended Description Supply : current suppty voltage Vcc ICC «A

3055a

Abstract: LC79431 Bi-directional shift register LCD 7 segment display with 13 pins LC7981, LC7940 LC79401 6.8 TFT LCD panel source driver Level Shift
Contextual Info: C o n tin u e d tro m p re v io u s p a g e Package Device Type tenter ot Drawing pins and number configuration Description Features LC7582B QIP 64B 3026B LC D driver Static 1/1 duty 53 segments, 1/2 duty 104 segments, 5-level A/D converter LC7582E QIP 64E

SM 3119 N

Abstract: SM 3117 N JAN1N4971US sm 170 220 JANTXV1N4969
Contextual Info: Zener Regulator Diodes Mia2§§2!! j. Part Number Microsemi ; Package Division i Outline Type Power Mil Vz Data Spec Sheet ID <W j V) Izt I (mA) Zzt (O ) Zzk (n ) IR (uA) VR (V) Toi. (+/-%) ; 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40

PU4117

Abstract: PU3117 PU4417 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3117, PU4117, PU 4417 PU3117, PU4117, PU 4417 Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s PU 3117 2 0 5n P o w e r A m p lifier, S w itch in g I • F e a tu re s • H igh D C c u r re n t gain hra • G ood lin earity o f DC c u r re n t gain

OPB8

Contextual Info: EQ SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861T51 /OPB861T55 PACKAGE DIMENSIONS DESCRIPTION The O PB 861T series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch II consists of an infrared emitting diode facing an NPN

Contextual Info: CDU TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C TIP31, 31A, 31B, 31C TIP32, 32A, 32B, 32C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications Ç — * B - F ?-^ — z i 3 -LU:

TJP31C

Abstract: T1P31 SM 3117 N T1P32A
Contextual Info: T1P31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C TIP31, 31A, 31B, 31C TIP32, 32A, 32B, 32C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

tip318

Abstract: pin configuration TIP31c TIP31 TIP31A TIP31B TIP31C TIP32 TIP32A TIP32B TIP32C
Contextual Info: TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C TIP31, 31A, 31B, 31C TIP32, 32A, 32B, 32C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications P IN C O N F IG U R A T IO N 1. BASE 2. C O LLE C TO R

SM 3117 N

Contextual Info: M O T O R O L A SC Í X S T R S / R 6367254 MOTOROLA SC T ^ | t , 3 b 7 S S 4 0DflS055 7 f F> XSTRS/R F 96D 8 2 0 5 2 . D T - M A X I M U M R A T IN G S Value Sym bol MMBT6428 MMBT6429 U n it C o lle ctor-E m itter Voltage VCEO 50 45 Vdc C ollector-Base Voltage

Contextual Info: SLOTTED OPTICAL SWITCH O P lO E L E C liO m C S OPB861T51/OPB861T55 PACKAGE DIMENSIONS DESCRIPTION T h e O P B 8 6 1 T serie s o f sw itch es is d e s ig n e d to allow the S E E NOTE 3 u ser m axim um flexibility in app licatio ns. E a c h switch c o n sists of an infrared emitting d io d e fa cin g a n N P N

HXTR-3625

Abstract: HXTR-3615 hxtr-3685 HXTR-3645 HXTR-3675 HSMX-3655 cabb Hewlett-Packard transistor microwave hxtr-7011 hxtr-7111
Contextual Info: HEWLETT-PACKARD 1 CMPNTS SDE I> m 4447SÖ4 QÜQSSbb 3 Q T - 3 h i* ? T-31'21 L ow N o ise T ran sistors HXTR-7011 C hip HXTR-7111, TX HXTR-3G15, TX HXTR-3645, TX HXTR-3675, TX HSMX-3635 HSMX-3655 Technical Data and and and and TXV TXV TXV TXV F eatures D escrip tion

umt block diagram

Abstract: MSM27C822ZB
Contextual Info: O K I Semiconductor M SM 27C 822ZB - 524,288-W ord x 16-Bit or 1,048,576-W ord x 8-B it O n e Tim e PROM D E S C R IP T IO N î e ! l ^ f M 2 nC822f Bu i! , au 8 M b e le c tric a lly Pro g ra m m ab le R ead - O n ly M e m o ry w h o se c o n fig u ra tio n can

BMS 13-48

Abstract: BLY14 BMS13-48 raychem termination kit PRICE NSA93 UT-141AA arinc 600 coax pin LLB DU UT141 coaxial nsa935
Contextual Info: A RIN C 600 Rack and Panel Connectors B K A D /E /F Size 5 Coax Contact Rear insertable / removable Rack and Panel Connectors Crimp Center Contact— Conforming to A R IN C 600 Crim p Toolinq C en te r C on tact P art Number C able A cco m m o ­ dation

MCC1100

Abstract: MPC8260 MPC860 PC15 XS2P xc6p
Contextual Info: MPC8260 Interrupt Controller What you will learn • What is the interrupt controller? • How the interrupt controller processes interrupts • What are the interrupt sources? • What is the priority of the interrupt sources? • How to prioritize the SCCs, FCCs, MCC, and SIU sources

IRF423

Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
Contextual Info: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

SN74LS32

Abstract: 7432 AND gate IC SM 3119 N 7432 or gate ic
Contextual Info: TYPES SN7432, Sk'74LS32, SN74S32 SN5432, &N54LS32, SN54S32 QUADRUPLE 2-INPUT POSITIVE-OR GATES R E V IS E D D E C E M B E R 1 9 8 3 • Package Options Include Standard Plastic N and C eram ic (J) 300-m il D ual-ln -Lin e P ackages, P lastic Sm all O u tlin e (D ) and

0902G

Abstract: SM 3117 circuit diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Gate Row Driver for TFT Type LCD Panel M C141522 CMOS The MC141522 is a high voltage LCD gate driver. It is a low power silicon-gate CMOS LCD driver chip which consists erf 120 channels gate drive to provide the row gating function of a TFT <ThirvFHrn-Tiaf«istqf)i.£D panel.

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

BFR92P

Contextual Info: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.

Diode SY 345

Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich­

TTC 103 thermistor

Abstract: XTR100AP XTR100 XTR100AM RTD signal conditioning theory Cold Junction Compensation Temecula I09fi 400X1
Contextual Info: X T R 100 BU RR-BRO W N n n Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSM ITTER FEA T U R ES A P P L IC A T IO N S • INSTRUMENTATION AMPLIFIER INPUT Low OffMt Voltage. 25m V mix Low Voltigi Drift 0.5m V/°C mix Low Nonllnsirlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL

TTC 103 thermistor

Abstract: XTR100AP thermistor ttc 103 XTR100 zero elevation sand zero suppression level 467C zero elevation and zero suppression SL010
Contextual Info: XTR100 BU RR-BRO W N n n Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSMITTER FEATURES A P P L IC A T IO N S • INSTRUMENTATION AMPLIFIER INPUT Low OffMt Voltage. 25m V mix Low Voltigi Drift 0.5m V/°C mix Low Nonllnsirlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL

Contextual Info: AT27LV040A Features • • Fast Read Access Time -120 ns Dual Voltage Range Operation Low Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 10% Supply Range Compatible With JEDEC Standard AT27C040 Low Power 3.3-volt CMOS Operation 20 |^A max. less than 1 j_iA typical Standby for Vcc = 3.6V