SM 4150 Search Results

SM 4151

Abstract: 1N5229B 1N4623 do 213aa SP6316
Contextual Info: Zener Regulator Diodes Part Number Mlcrosemi Division Package Outline Data Power Type; Mil W i Spec Sheet ID Vz (V) SM SM STD SM STD STD STD STD SM SM STD STD STD STD STD STD STD STD SM SM STD SM STD SM STD SM STD SM STD SM STD STD STD STD SM SM SM SM STD

smd 4496

Abstract: 4148-1 SM SM4942 SM5615 1N3643 1N3695 1N4460
Contextual Info: CROSS REFERENCE SELECTION GUIDE Rectifiers and Stacks* JEDEC TYPE NUMBER SMD TYPE NUMBER PACKAGE TYPE PEAK REV. VOLTAGE AVG. DC CURRENT l0 in AMPS 1N3695 3595 SM B 125 0.5 1N4938 4938 SM A 200 0.5 1N4942 thru 1N4948 4942 SM thru 4948 SM A 200 thru 1000

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

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Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150S o % #f 1 l $ I c I ^88888 id L SEM ICO N D U CTO RS G eneric Part Num ber: 2N4150S Type 2N4150S G eom etry 9201 P olarity NPN Q ual Level: JAN - JA N TXV

SM 4151

Abstract: 2sc497
Contextual Info: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo

2sa1876

Contextual Info: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]

SN75325

Abstract: SN75325J SN7525J 75325 SN7524 SN7524J SN7525 core memory sense DTL Fairchild
Contextual Info: Fairchild Sem iconductors SN7524, SN7525 Tw o Channel Core Memory Sense Amplifiers GENERAL DESCRIPTION The 7524 and 7525 are tw o channel core memory sense am plifiers constructed on a silicon chip using the patented Fairchild P lanar epitaxial process. They can be used fo r sm all IK to 8K

Contextual Info: CRO4250A-LF 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 4225 - 4275 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-16-SM - Style Package

4144

Contextual Info: CRO4100A-LF 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 4095 - 4105 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-16-SM - Style Package

Contextual Info: POSm W M C M D U SIR ES BELIEVES THE DATA ON THB DRAWING TO BE RELIABLE, SM CE THE TECHNICAL INFORMATION 6 OMEN FREE OF CHARGE, THE USER EMPLOYS SUCH MFORMATION AT H B OWN B SCREIM N AND RISK. POSIIRONIC M OUSTRES ASSUM ES NO RESPONSIBLITY FOR RESULTS OBIMNED OR IWMOflFS

SM 4151

Contextual Info: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 3 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR12D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage re fe re n c e o f 1.25 v o lts . The de vice is available in a sm all outline SOT23 surface

416 SP 1E4

Contextual Info: .0 y TUTOR Understanding Data Compression B Y Z FlU pgTûuvî io t, find iwchartw ABC rioN 131 •ografx ' ne o f the h o tte st topics in com ­ p u te r science these days is d ata com pression— the art o f shoehorning large am ounts of d ata into sm all spaces. Storage re ­

CLC940AI

Abstract: CLC940 CLC940AM
Contextual Info: Fast Sampling, Wideband Track and Hold Amplifier APPLICATIONS: FEATURES typical : • • • • • • 10ns h o ld -to -tra c k a c q u is itio n tim e • 12ns tra c k -to -h o ld se ttling tim e • 1 ps a pe rtu re jitte r • 150M H z sm all signal ban d w id th

Contextual Info: P O Sm tO M C IN D U STR IES B E U E Y E S TH E DATA O N T H E DRAM NG TO B E RELIABLE. SIN C E TH E TECHNICAL INFORM ATION IS GIVEN F R EE O F CHARGE. TH E U SER EM PLO YS SU C H M FO RM ADO N AT H B OWN O B C R EIIO N ANO R ISK . POS ITRO M C IN D U STR IES A SSU M E S NO

Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 2N7000 Advance Information S m a ll-S ig n a l Field E ffe ct T ra n sisto r N -C h ann el Enhancem ent-M ode S ilic o n G ate T M O S N-CHANNEL SM A LL-SIG N AL T M O S FET rDS on = 5 O H M S 60 VOLTS . . . are designed fo r h ig h volta g e , hig h speed a p p lica tio n s such as

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: MCL 25 NN12 P35-4150-0
Contextual Info: P35-4150-0 MONOLITHIC BROADBAND AMPLIFIER, 2 - 18GHz Features • • • • • • Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical Gain flatness ±0.5dB, typical On chip DC blocking capacitors at input and output

Contextual Info: h ^ M Scottsdale, A Z m Micmsemi Progress Powered by Technology S24-4148CC And S24-4150CC 8700 E. Thomas Road Scottsdale, AZ 85251 602 941-6300 Switching Diode Array FEATURES • • • 18 isolated lines, 6 common Standard 24 pin Surface Mount Package UL 94V-0 Flammability Classification

LD33

Abstract: LD33 data sheet LD17 LD19 LD20 LD22 LD28 LD29 LD31 LD32
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at LD17.24 and LD29.39 are laser diodes based on GaSb-InAs which were developed for applications in tunable diode laser spectroscopy at a wavelength in the mid-infrared range. The output emission can

Mini-Circuits ERA-1SM

Abstract: era-5sm
Contextual Info: Amplifier Selection Guide MODEL NO. r t N S M T • ex. tz < < > o C O N P 1 N C O N FREQ. MHz \ lu GAIN (d&) MIN. MAX"> POWER (dBm) N.F. (dB) TYP. 3rd ORDER I.P. (dBm) IN DC POWER V 1 VOLT (mA) VSWR' OUT CASE STYLE ERA-1 ERA-2 ERA-3 D C -8 0 0 0 D C -6 0 0 0

131-8404-111

Abstract: 135-3403-101 CPN-8 transistor 131 RG142 142-0693-001 3402 transistor 75OHM B 1403 N Commscope RG 59
Contextual Info: Connectivity.for Business-Critical Continuity RF Cable Assembly Fixed Length Catalog Connectivity.for Business-Critical Continuity RF Cable Assembly ElectricalRatings Electricalratings ofa cable assem bly are determ ined by the lim iting connectortype and cable size.

2Ghz agc amplifier

Abstract: NN12 P35-4150-0
Contextual Info: P35-4150-0 Marconi Optical Components Monolithic Broadband Amplifier, 2 - 18GHz Features • · · · · · Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical Gain flatness ±0.5dB, typical On chip DC blocking capacitors at input and output

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: 2Ghz agc amplifier NN12 P35-4150-000-200 MMIC Amplifier 18ghz
Contextual Info: Data sheet MMIC Broadband Amplifier, 2 - 18GHz Features • Broadband, cascadable gain block • AGC control with gate bias The P35-4150-000-200 is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide