SM FLASH DRIVE Search Results

LQPF 128 Package

Abstract: Flash EEPROM card SN11012 flash bios chip 28 pin smartmedia controller "usb 1.0" usb flash drive circuit diagram usb 3.0 flash drive usb 3 sm Flash drive controller sm usb Flash drive controller
Contextual Info: SN11012 Confidential 2002/6/26 0.2 USB to SM/Flash Interface Controller, Mass Storage Class Compliant 1 General Description SN11012 is a high-performance integrated circuit to bridge USB and SM/Flash compliance devices. It provides a flexible and cost efficient single chip solution for

Flash EEPROM card

Abstract: LQPF-80 smartmedia ecc SN11030 50 pin ATAPI
Contextual Info: SN11030 Confidential 2002/6/26 0.2 USB to CF/ATA/SM/Flash Interface Controller, Mass Storage Class Compliant 1 General Description SN11030 is a high-performance integrated circuit to bridge USB and CF/ATA/SM/Flash compliance devices. It provides a flexible and cost efficient single

GT25G102

Contextual Info: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT20G102

Contextual Info: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT25G101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

gt25g101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT20G101

Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

25XX1024

Abstract: 25AA1024T 25lc1024 25AA1024 D004 D005 D006
Contextual Info: 25AA1024/25LC1024 1 Mbit SPI Bus Serial Flash Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC1024 2.5-5.5V 256 Byte I,E P, SM, MF 25AA1024 1.8-5.5V 256 Byte I P, SM, MF Features Description • Max. clock 20 MHz • Flash and byte-level serial EEPROM operation

GT25G102

Contextual Info: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT20G102

Contextual Info: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

GT25G101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

93c86 ale

Contextual Info: Genesys Logic, Inc. GL814 USB 2.0 SmartMediaTM Card Reader / Flash Drive Controller Datasheet Revision 1.10 Dec. 10, 2002 GL814 USB 2.0 SM Card Reader/Flash Drive Controller Copyright: Copyright 2003 Genesys Logic Incorporated. All rights reserved. No part of the materials may be

smsc usb97c223

Abstract: MA10 MA12 MA13 OS10 USB97C223 USB97C223-NE SDC MMC READER SMC SD MMC card reader
Contextual Info: USB97C223 Bus Powered USB 2.0 Flash Media Controller Datasheet Product Features Complete System Solution for interfacing SmartMediaTM SM , Memory StickTM (MS), High Speed Memory Stick (HSMS), Memory Stick PRO (MSPRO), Secure Digital (SD), MultiMediaCardTM (MMC), NAND Flash, Compact

Contextual Info: USB97C223 Bus Powered USB 2.0 Flash Media Controller Datasheet Product Features Complete System Solution for interfacing SmartMediaTM SM , Memory StickTM (MS), High Speed Memory Stick (HSMS), Memory Stick PRO (MSPRO), Secure Digital (SD), MultiMediaCardTM (MMC), NAND Flash, Compact

128-pin card reader

Abstract: usb97c223-nu MA10 MA12 MA13 OS10 USB97C223 USB97C223-NE usb circuit diagram SDC MMC READER
Contextual Info: USB97C223 Bus Powered USB 2.0 Flash Media Controller Datasheet Product Features ƒ Complete System Solution for interfacing SmartMediaTM SM , Memory StickTM (MS), High Speed Memory Stick (HSMS), Memory Stick PRO (MSPRO), Secure Digital (SD), MultiMediaCardTM (MMC), NAND Flash, Compact

SD card reader to ide circuit diagram

Contextual Info: USB97C223 Bus Powered USB 2.0 Flash Media Controller Datasheet Product Features ƒ Complete System Solution for interfacing SmartMediaTM SM , Memory StickTM (MS), High Speed Memory Stick (HSMS), Memory Stick PRO (MSPRO), Secure Digital (SD), MultiMediaCardTM (MMC), NAND Flash, Compact

Contextual Info: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive

27A6

Abstract: A424J
Contextual Info: TMS28F210 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS210-DEC EMBER 1992 O rganization. . . 64K x 16 Flash Memory N PACKAGEt Pin Compatible with Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time:

OTi-2126

Abstract: 8051 interfacing with 93c46 CompactFlash, Memory Stick, Secure Digital card controller, micro drive Ours Technology 93C46 LP 2126 30PF 384B 93C46 CRC16
Contextual Info: OTi Ours Technology Inc. OTi-2126 7 In 1 Card Reader Controller „ OVERVIEW The OTi-2126 is a high-performance and cost-effective Flash Card Reader/Writer Controller developed for interfacing USB2.0 bus to seven types of storage devices: Compact Flash TM CF type I & type II, Micro Drive, SmartMedia TM (SM), Secure Digital TM (SD), Multi

phase controller L120

Abstract: AMD flash ETOX
Contextual Info: SHARP PRODUCT PREVIEW Rev. 1.3 LH28F160S3-L10/13 16-M BIT 2MBX8/1 MBx16 Sm art 3 Flash MEMORY • Smart 3 Technology — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP User-Configurable x8 or x16 Operation ■ Common Flash interface (CFI) — Universal & Upgradable Interface