SM8A27HE3 Search Results
SM8A27HE3 Price and Stock
Vishay Semiconductors SM8A27HE3-2DTVS DIODE 22VWM 40VC DO218AB |
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SM8A27HE3-2D | Cut Tape | 449 | 1 |
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Vishay Intertechnologies SM8A27HE3/2D8W,27V,+/-3V,UNIDIR,SM8A - Tape and Reel (Alt: SM8A27HE3/2D) |
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SM8A27HE3/2D | Reel | 7 Weeks | 750 |
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SM8A27HE3/2D | 938 |
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SM8A27HE3/2D | 2,250 | 750 |
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SM8A27HE3/2D | 2,250 | 7 Weeks | 750 |
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SM8A27HE3/2D | Cut Tape | 722 | 1 |
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SM8A27HE3/2D | Reel | 70,500 | 750 |
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SM8A27HE3/2D | 9 Weeks | 750 |
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SM8A27HE3/2D | Cut Tape | 600 | 0 Weeks, 1 Days | 1 |
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SM8A27HE3/2D | 8 Weeks | 750 |
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SM8A27HE3/2D | 335 | 1 |
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Vishay Intertechnologies SM8A27HE3/2D.Product Range:Sm8A27 Series; Tvs Polarity:Unidirectional; Reverse Standoff Voltage:22V; Clamping Voltage Max:40V; Diode Case Style:Do-218Ab; No. Of Pins:2Pins; Minimum Breakdown Voltage:24V; Maximum Breakdown Voltage:30V Rohs Compliant: Yes |Vishay SM8A27HE3/2D. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SM8A27HE3/2D. | Reel | 750 |
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Vishay Intertechnologies SM8A27HE32DSURFACE MOUNT PAR TRANSIENT VOLTAGE SUPPRESSOR Trans Voltage Suppressor Diode, 6600W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SM8A27HE32D | 1,500 |
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SM8A27HE3 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SM8A27HE3/2D | Vishay Semiconductors | TVS - Diodes, Circuit Protection, TVS DIODE 22VWM 40VC DO218AB | Original |
SM8A27HE3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
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vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG | |
DO-218ABContextual Info: SM8A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec |
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SM8A27 ISO7637-2 J-STD-020C, 2002/95/EC 2002/96/EC DO-218AB 18-Jul-08 DO-218AB | |
Contextual Info: SM8A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability |
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SM8A27 ISO7637-2 DO-218AB J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 | |
TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
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vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801 | |
piezo injector
Abstract: Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512
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ISO9141 O-277A 0V-50VDC; SM5A27HE3 DO-218AB SM8A27HE3 piezo injector Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512 | |
Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM8A27 DO-218AB ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM8A27 DO-218AB ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SM8A27 Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
Original |
SM8A27 ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-218AB 18-Jul-08 | |
Contextual Info: SM8A27 Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM8A27 ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-218AB 11-Mar-11 | |
Contextual Info: SM8A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec |
Original |
SM8A27 ISO7637-2 J-STD-020C, 2002/95/EC 2002/96/EC DO-218AB 08-Apr-05 | |
Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM8A27 DO-218AB ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM8A27 DO-218AB ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. | |
Contextual Info: EPS Electric Power Steering Table of Contents CAN BUS, ESD Protection. 3 CAN BUS, ISO9141 Bus Transceiver. 4 |
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ISO9141 0V-50VDC; V-50VDC F-470Â SM5A27HE3 DO-218AB SM6A27HE3 SM8A27HE3 | |
Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM8A27 DO-218AB ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
Original |
SM8A27 ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-218AB 2011/65/EU 2002/95/EC. | |
SM8A27
Abstract: DO-218AB ISO7637 ISO7637-2 JESD22-B102 J-STD-002 DO218AB
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SM8A27 ISO7637-2 J-STD-020, 2002/95/EC 2002/96/EC DO-218AB 18-Jul-08 SM8A27 DO-218AB ISO7637 JESD22-B102 J-STD-002 DO218AB | |
Contextual Info: SM8A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
Original |
SM8A27 DO-218AB ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. |