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    SMA CASE 403D-02 FOOTPRINT Search Results

    SMA CASE 403D-02 FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    SMA CASE 403D-02 FOOTPRINT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE A34

    Abstract: 403D MBRA340T3 MBRA340T3G A34 Schottky
    Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRA340T3 DIODE A34 403D MBRA340T3 MBRA340T3G A34 Schottky

    Untitled

    Abstract: No abstract text available
    Text: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF MBRA120ET3 MBRA120ET3/D

    403D

    Abstract: MBRA160T3 MBRA160T3G
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRA160T3 MBRA160T3/D 403D MBRA160T3 MBRA160T3G

    b1l3

    Abstract: 403D MBRA130LT3 MBRA130LT3G
    Text: MBRA130LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA130LT3 403D-01 403D-02. b1l3 403D MBRA130LT3 MBRA130LT3G

    MBRA120LT3

    Abstract: No abstract text available
    Text: MBRA120LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF MBRA120LT3 MBRA120LT3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRA160T3G, NRVBA160T3G MBRA160T3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRA210LT3G, NRVBA210LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210LT3G, NRVBA210LT3G MBRA210LT3/D

    403D

    Abstract: MBRA120ET3
    Text: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF MBRA120ET3 MBRA120ET3/D 403D MBRA120ET3

    sma footprint wave soldering

    Abstract: MRA4007T3G SMA CASE 403D-02 MRA4004T3G SMA CASE 403D-02 footprint MRA4006T3G MRA4005T1G MRA4005T3G 403D MRA4003
    Text: MRA4003T3G Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive applications. Features • Compact Package with J−Bend Leads Ideal for Automated Handling


    Original     		PDF MRA4003T3G MRA4003T3/D sma footprint wave soldering MRA4007T3G SMA CASE 403D-02 MRA4004T3G SMA CASE 403D-02 footprint MRA4006T3G MRA4005T1G MRA4005T3G 403D MRA4003

    MRA4004T3G

    Abstract: 403D MRA4003T3 MRA4003T3G MRA4004T3 MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3 SMA CASE 403D-02 footprint
    Text: MRA4003T3 Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive applications. Features • Compact Package with J−Bend Leads Ideal for Automated Handling


    Original     		PDF MRA4003T3 MRA4003T3/D MRA4004T3G 403D MRA4003T3G MRA4004T3 MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3 SMA CASE 403D-02 footprint

    MBRA160T3-D

    Abstract: MBRA160T3G 403D MBRA160T3
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRA160T3 MBRA160T3/D MBRA160T3-D MBRA160T3G 403D MBRA160T3

    NRVA4007T3G

    Abstract: NRVA4007 NRVA4003T3G MRA4004T3G MRA4007T3G
    Text: MRA4003T3G Series, NRVA4003T3G Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive applications. Features •     Compact Package with J−Bend Leads Ideal for Automated Handling


    Original     		PDF MRA4003T3G NRVA4003T3G AEC-Q101 MRA4003T3/D NRVA4007T3G NRVA4007 MRA4004T3G MRA4007T3G

    403D

    Abstract: MURA215T3 MURA220T3
    Text: MURA215T3, MURA220T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURA215T3, MURA220T3 r14525 MURA215T3/D 403D MURA215T3 MURA220T3

    SMA CASE 403D-02 footprint

    Abstract: No abstract text available
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRA140T3 MBRA140T3/D SMA CASE 403D-02 footprint

    MURA220T3G

    Abstract: MURA220 403D MURA215T3 MURA215T3G MURA220T3
    Text: MURA215T3, MURA220T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURA215T3, MURA220T3 MURA215T3/D MURA220T3G MURA220 403D MURA215T3 MURA215T3G MURA220T3

    Untitled

    Abstract: No abstract text available
    Text: MURA130T3, MURA140T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURA130T3, MURA140T3 MURA130T3/D

    MURA110T3G

    Abstract: MURA110T3 403D MURA105T3 MURA105T3G
    Text: MURA105T3, MURA110T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURA105T3, MURA110T3 MURA105T3/D MURA110T3G MURA110T3 403D MURA105T3 MURA105T3G

    SMA CASE 403D-02

    Abstract: 403D MURA215T3 MURA215T3G MURA220T3 MURA220T3G
    Text: MURA215T3, MURA220T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURA215T3, MURA220T3 MURA215T3/D SMA CASE 403D-02 403D MURA215T3 MURA215T3G MURA220T3 MURA220T3G

    NS6A5.0AT3G

    Abstract: NSA5.0AT3G
    Text: NSA5.0AT3G 400 Watt Peak Power Zener Transient Voltage Suppressor Unidirectional http://onsemi.com The NSA5.0AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. It has excellent clamping capability, high surge capability, low zener


    Original     		PDF

    403D

    Abstract: MBRA210ET3 MBRA210ET3G
    Text: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210ET3 MBRA210ET3/D 403D MBRA210ET3 MBRA210ET3G

    Untitled

    Abstract: No abstract text available
    Text: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210ET3 MBRA210ET3/D

    MBRA210LT3G

    Abstract: No abstract text available
    Text: MBRA210LT3G, NRVBA210LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210LT3G, NRVBA210LT3G MBRA210LT3/D MBRA210LT3G

    403D

    Abstract: MBRA210LT3 MBRA210LT3G
    Text: MBRA210LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRA210LT3 MBRA210LT3/D 403D MBRA210LT3 MBRA210LT3G

    Untitled

    Abstract: No abstract text available
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF SS16/D