SMA CASE 403D-02 FOOTPRINT Search Results
SMA CASE 403D-02 FOOTPRINT Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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REF3425QDGKRQ1 |
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Automotive, low-drift, low-power, small-footprint series voltage reference 8-VSSOP -40 to 125 |
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SMA CASE 403D-02 FOOTPRINT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DIODE A34
Abstract: 403D MBRA340T3 MBRA340T3G A34 Schottky
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MBRA340T3 DIODE A34 403D MBRA340T3 MBRA340T3G A34 Schottky | |
Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
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MBRA120ET3 MBRA120ET3/D | |
403D
Abstract: MBRA160T3 MBRA160T3G
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MBRA160T3 MBRA160T3/D 403D MBRA160T3 MBRA160T3G | |
b1l3
Abstract: 403D MBRA130LT3 MBRA130LT3G
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MBRA130LT3 403D-01 403D-02. b1l3 403D MBRA130LT3 MBRA130LT3G | |
MBRA120LT3Contextual Info: MBRA120LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
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MBRA120LT3 MBRA120LT3/D | |
Contextual Info: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3G, NRVBA160T3G MBRA160T3/D | |
Contextual Info: MBRA210LT3G, NRVBA210LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low |
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MBRA210LT3G, NRVBA210LT3G MBRA210LT3/D | |
403D
Abstract: MBRA120ET3
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MBRA120ET3 MBRA120ET3/D 403D MBRA120ET3 | |
sma footprint wave soldering
Abstract: MRA4007T3G SMA CASE 403D-02 MRA4004T3G SMA CASE 403D-02 footprint MRA4006T3G MRA4005T1G MRA4005T3G 403D MRA4003
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MRA4003T3G MRA4003T3/D sma footprint wave soldering MRA4007T3G SMA CASE 403D-02 MRA4004T3G SMA CASE 403D-02 footprint MRA4006T3G MRA4005T1G MRA4005T3G 403D MRA4003 | |
MRA4004T3G
Abstract: 403D MRA4003T3 MRA4003T3G MRA4004T3 MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3 SMA CASE 403D-02 footprint
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MRA4003T3 MRA4003T3/D MRA4004T3G 403D MRA4003T3G MRA4004T3 MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3 SMA CASE 403D-02 footprint | |
MBRA160T3-D
Abstract: MBRA160T3G 403D MBRA160T3
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MBRA160T3 MBRA160T3/D MBRA160T3-D MBRA160T3G 403D MBRA160T3 | |
NRVA4007T3G
Abstract: NRVA4007 NRVA4003T3G MRA4004T3G MRA4007T3G
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MRA4003T3G NRVA4003T3G AEC-Q101 MRA4003T3/D NRVA4007T3G NRVA4007 MRA4004T3G MRA4007T3G | |
403D
Abstract: MURA215T3 MURA220T3
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MURA215T3, MURA220T3 r14525 MURA215T3/D 403D MURA215T3 MURA220T3 | |
SMA CASE 403D-02 footprintContextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA140T3 MBRA140T3/D SMA CASE 403D-02 footprint | |
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MURA220T3G
Abstract: MURA220 403D MURA215T3 MURA215T3G MURA220T3
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MURA215T3, MURA220T3 MURA215T3/D MURA220T3G MURA220 403D MURA215T3 MURA215T3G MURA220T3 | |
Contextual Info: MURA130T3, MURA140T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. |
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MURA130T3, MURA140T3 MURA130T3/D | |
MURA110T3G
Abstract: MURA110T3 403D MURA105T3 MURA105T3G
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MURA105T3, MURA110T3 MURA105T3/D MURA110T3G MURA110T3 403D MURA105T3 MURA105T3G | |
SMA CASE 403D-02
Abstract: 403D MURA215T3 MURA215T3G MURA220T3 MURA220T3G
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MURA215T3, MURA220T3 MURA215T3/D SMA CASE 403D-02 403D MURA215T3 MURA215T3G MURA220T3 MURA220T3G | |
NS6A5.0AT3G
Abstract: NSA5.0AT3G
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403D
Abstract: MBRA210ET3 MBRA210ET3G
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MBRA210ET3 MBRA210ET3/D 403D MBRA210ET3 MBRA210ET3G | |
Contextual Info: MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low |
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MBRA210ET3 MBRA210ET3/D | |
MBRA210LT3GContextual Info: MBRA210LT3G, NRVBA210LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low |
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MBRA210LT3G, NRVBA210LT3G MBRA210LT3/D MBRA210LT3G | |
403D
Abstract: MBRA210LT3 MBRA210LT3G
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MBRA210LT3 MBRA210LT3/D 403D MBRA210LT3 MBRA210LT3G | |
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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SS16/D |