SMA75 Search Results

TRANSISTOR A75

Abstract: A75-2 CA75-2 SMA75-2
Contextual Info: A75-2/SMA75-2 5 TO 250 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · HIGH GAIN 21.0 dB TYP. · MEDIUM OUTPUT LEVEL +8.0 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/02)* Characteristics Typical Frequency Small Signal Gain (min.)

Contextual Info: A75/SMA75 5 TO 500 MHz TO-8 CASCADABLE AMPLIFIER • HIGH GAIN: 21.0 dB TYP. · LOW NOISE: 2.1 dB (TYP.) · MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 to +20 VOLTS Specifications (Rev. Date: 6/02)* Characteristics Typical Frequency

TRANSISTOR A75

Abstract: transistor A753 A75-3 CA75-3 SMA75-3
Contextual Info: A75-3/SMA75-3 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 20.5 dB TYP. · LOW NOISE: 1.7 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation

WJA75

Abstract: WJ-A75
Contextual Info: WJ-A75 / SMA75 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 21 dB TYP. LOW NOISE: 2.6 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Outline Drawings A75 Specifications*

CA75

Abstract: SMA75
Contextual Info: A75/SMA75 5 TO 500 MHz TO-8 CASCADABLE AMPLIFIER • HIGH GAIN: 21.0 dB TYP. · LOW NOISE: 2.1 dB (TYP.) · MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 to +20 VOLTS Specifications (Rev. Date: 6/02)* Characteristics Typical Frequency

bc 206 transistor

Abstract: WJA75 WJA75-3 WJ-a75-3
Contextual Info: WJ-A75-3 / SMA75-3 10 to 500 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN: 20.5 dB TYP. ♦ LOW NOISE: 2.3 dB (TYP.) Outline Drawings Specifications51 A75-3 Typical Characteristics Frequency (Min.) Small Signal Gain (Min.)

A75-3

Abstract: CA75-3 SMA75-3 TRANSISTOR A75
Contextual Info: A75-3/SMA75-3 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 20.5 dB TYP. · LOW NOISE: 1.7 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation

transistor A753

Abstract: A75-3 CA75-3 MAAM-008317-CA7503 SMA75-3 TRANSISTOR A75
Contextual Info: A75-3 / SMA75-3 Cascadable Amplifier 10 to 500 MHz Rev. V3 Features Product Image • HIGH GAIN: 20.5 dB TYP. • LOW NOISE: 1.7 dB (TYP.) Description The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

STELLEX

Contextual Info: A75/SMA75 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 21.0 dB TYP. · LOW NOISE: 2.1 dB (TYP.) · MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 to +20 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics

WJA75

Abstract: WJ-A75 wj a75 bc 459 transistor transistor BC 8050 ATIC 164 D2 w-ja75
Contextual Info: u u U A75 / SMA75 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Outline Drawings A75 Specifications*

A75-2

Abstract: CA75-2 SMA75-2
Contextual Info: Cascadable Amplifier 5 to 250 MHz A75-2/ SMA75-2 V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • HIGH GAIN: 21.0 dB TYP. • MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Description The A75-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

Contextual Info: Cascadable Amplifier 5 to 500 MHz A75/ SMA75 V3 Features • • • • Product Image HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Description The A75 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR A75

Abstract: A75-2 CA75-2 SMA75-2
Contextual Info: A75-2 / SMA75-2 Cascadable Amplifier 5 to 250 MHz Rev. V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • HIGH GAIN: 21.0 dB TYP. • MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Description The A75-2 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR A75

Abstract: CA75 SMA75
Contextual Info: A75 / SMA75 Cascadable Amplifier 5 to 500 MHz Rev. V3 Features • • • • Product Image HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Description The A75 RF amplifier is a discrete hybrid design, which uses

Contextual Info: Cascadable Amplifier 10 to 500 MHz A75-3/ SMA75-3 V3 Features Product Image • HIGH GAIN: 20.5 dB TYP. • LOW NOISE: 1.7 dB (TYP.) Description The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

WJ-A75

Abstract: SMA75-2 WJA75
Contextual Info: WJ-A75-2 / SMA75-2 5 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN: 21.0 dB TYP. ♦ MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Outline Drawings Specifications* A75-2 Typical Characteristics Frequency (Min.) Small Signal Gain (Min.)

Contextual Info: 7 4 REVISIONS ISS ZONE DESC R1PTI0 N \ PER REQUEST\ DATE F F E E 01 D B C c PCB M OUNTI NG NOTES; FINISH PLATING THICKNESS IN M IC R O -IN C H E S 1. BRASS PER Q Q - B - 6 2 6 2. GOLD PL. 3 MIN, THICK OVER NICKEL PL. 1 0 0 MIN. THICK OVER COPPER STRIKE

Contextual Info: 4 7 REVISIONS ISS ZONE DESC R 1PTI0 N\PER R EQUEST\ DATE F F E E D B C C B A NOTES: FINISH PLATING THICKNESS MICRO-INCHES 1. BRASS PER Q Q -B-626 2. GOLD P L 0 MIN. THICK OVER NICKEL P L 00 MIN. THICK OVER COPPER STRIKE 3. BERYLLIUM COPPER PER Q Q -C -530

Contextual Info: 4 7 REVISIONS ISS ZONE DESCRIPTION\PER REGUEST\DATE ^2.5r F F RECOMMENDED CABLE STRIPPING DIM’S E E D D C C NOTES: FINISH PLATING THICKNESS IN MICRO-INCHES 1. BRASS PER Q Q -B -626 2. GOLD PL. 3 MIN. THICK OVER NICKEL PL. 1DO MIN. THICK OVER COPPER STRIKE

WJ-A75

Abstract: wj a75 wja75 WJA75-3 ATIC 112 WJ-A75-3 TRANSISTOR A75
Contextual Info: uuU A75-SMA75-3 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN: 20.5 dB TYP. ♦ LOW NOISE: 1.7 dB (TYP.) Outline Dra wing s Specifications* A75-3 Characteristics Frequency (Min.) Small Signal Gain (Min.) Gain Flatness (Max.)

AXP 188

Abstract: AXP 209 AXP 189 SMA12CA SMA100A btp 128 azp marking MARKING aep 153 AVP AXP+188+IC
Contextual Info: 1/2 4 0 0 W T R A N S I E N T V O LTA G E S U P P R E S S O R S UNI-DIRECTIONAL AND BI-DIRECTIONAL CLAMPING • 400W DEVICES RATED ACCORDING TO BREAKDOWN VOLTAGE • RELIABLE LOW COST CONSTRUCTION WITH UL 94V-0 PLASTIC MATERIAL • HIGH TEMPERATURE SOLDERING: 250˚C FOR 10s AT TERMINALS

A17a

Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
Contextual Info: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time

Contextual Info: 7 4 REVISIONS ISS ZONE DESC R1PTI0 N \ PER REQUEST\ DATE F F E E 01 D B C C PCB MOUNTING HOLES NOTES; FINISH PLATING THICKNESS IN M IC R O -IN C H E S 1. BRASS PER Q Q -B -6 2 6 B 2 . NICKEL PL. B 1 DO MIN. THICK OVER COPPER STRIKE 3. BERYLLIUM COPPER PER Q Q -C -53Q

Contextual Info: 7 4 REVISIONS ISS ZONE DESC R1PTI0 N \ PER REQUEST\ DATE F F E E D D C C NOTES: FINISH PLATING THICKNESS IN MICRO-INCHES 1. BRASS PER Q Q -B -6 2 6 2. GOLD PL, 3 MIN, THICK OVER NICKEL P L 100 MIN. THICK OVER COPPER STRIKE 3. BERYLLIUM COPPER PER Q Q -C -5 3 0