SMD 33A Search Results

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

TVP06B15A

Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit.

Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15CJ6V8-G Thru. TV15CJ601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power : 1500Watts RoHS Device Features -Glass passivated chip. -1500W peak pulse power capability with a 10/1000 S waveform, repetitive rate

5a6 zener diode

Abstract: SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd
Contextual Info: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2

SMD MARKING CODE 5a6

Abstract: SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd
Contextual Info: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2

L033 regulator

Abstract: IRHNA597160 IRHNA593160
Contextual Info: PD - 94493 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA597160 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNA597160 100K Rads (Si) IRHNA593160 300K Rads (Si) RDS(on) 0.049Ω 0.049Ω ID -52A -52A SMD-2 International Rectifier’s R5 TM technology provides

Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2532 FDB2532 TO-263 Unit: mm rDS(ON) = 14m +0.1 1.27-0.1 Features (Typ.), VGS = 10V, ID = 33A +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: C30T04Q C30T04Q-11A 33A/40V SCHOTTKY BARRIER DIODE GCQ30A04 FCQ30A04 FEATURES o [ SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T04Q o Tabless TO-220: C30T04Q-11A O TO-220AB : GCQ30A04 r 2.2f.087) 1.8(.071) o T0-220AB Fully Molded Isolation

FCQ30A06

Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

FAG 29 diode

Abstract: K/FAG 29 diode
Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A /60V FEATURES 1.2 .047 — 4.8<1.9) MAX O |SOUARE-PAKlTO-263AB (SMD) Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB > 914158 . ) 10.6 .417) 8.5U35) 9.6 .378)

Diode smd 5j

Abstract: J124 100-c30 C30T06Q C30T06Q-11A FCQ30A06 GCQ30A06 DIODE smd Wj SMD 23k g4 150H2
Contextual Info: SCHOTTKY 13830612 C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

DIODE t15 82

Abstract: FCH30A10 C30T09Q C30T09Q-11A C30T10Q C30T10Q-11A FCH30A09 GCH30A09 GCH30A10 DIODE smd Wj
Contextual Info: 3 ?a /on innu 33a/90~ioov CPUflTTlfV DADDICD ninne SCHOTTKY BARRIER DIODE C30T09Q C30T09Q-11A GCH30A09 FCH30A09 c30tiqq c30ti0q-iia gch3Qaio fch30aiq FEATURES o | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T • • Q o Tabless TO-220: C30T-Q-11A

Contextual Info: SCHOTTKY BARRIER DIODE C30T03QL C30T03QL-11A 33a/ sov FEATURES o ISQUARE-PAXlTO-263AB SMD Packaged in 24mm Tape and Reel : C30T03QL O Tabless TO-220: C30T03QL-11A ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop o High Surge Capability o 20 Volts through 100 Volts

15n10

Abstract: 100-c30 smd 33a C30T09Q C30T09Q-11A C30T10Q C30T10Q-11A FCH30A09 FCH30A10 GCH30A09
Contextual Info: SCHOTTKY BARRIER DIODE /on 1nm i 33A/90— 10UV C30T09Q C30T09Q-11A GCH30A09 FCH30A09 C30T10Q C30T10Q-11A GCH30A10 FCH30A10 FEATURES o | SQUARE-PAK~| TO-263AB SMD Packaged in 24mm Tape and Reel : C30T • • Q o Tabless TO-220: C30T-Q-11A o T 0220A B : GCH30A • •

Contextual Info: SCHOTTKY BARRIER DIODE C30T03QL C30T03QL-11A 33A/30V FEATU RES o | SQ UA RE-PA K I TO-263AB SMD Packaged in 24mm Tape and Reel : C30T03QL o Tabless TO-22G C30T03QL-11A o Dual Diodes - C athode Com m on ° Low Forw ard Voltage D rop ° H igh Surge Capability

Contextual Info: SCHOTTKY BARRIER DIODE C30T02QL C30T02QL-11A 33a /20 v FEATURES o | SQ UA RE-PÀ K] TO-263AB SMD Packaged in 24mm Tape and Reel : C30T02QL o Tabless TO-220: C30T02QL-11A o Dual Diodes - C athode Com m on 2.2(.Q87) 1.8(.071) ° Low Forw ard Voltage D rop

smd diode l03

Abstract: smd JSs 13 smd JSs diode smd JSs t0 ca smd L03 SMD smd JSs 24 FCQ20A04 C30T04 C30T04Q
Contextual Info: SCHOTTKY BARRIER DIODE C30T04Q C30T04Q-11A 33A/40V GCQ30A04 FCQ30A04 FEATURES O [ SQ U A RE-PA K l TO-263AB SMD Packaged in 24mm T ape and Reel : C30T04Q o Tabless TO-220: C30T04Q-11A ° T 0-220A B : GCQ30A04 o T 0-220A B Fully M olded Isolation : FCQ20A04

A46 SMD

Abstract: THA104 THA104-0R2 THA104-0R6 THA104-0R5 THA104-0R9 THA104-R15 THA104-R33
Contextual Info: Power Inductor SMD TYPE THA104 TYPE FEATURES APPLICATIONS Notebook computers Battery powered equipment DC/DC converters Servers Big current 45A Low profile: 10x10x4mm Footprint compatible with most standard Lower temperature rise at big current Low DCR (0.8m )

Contextual Info: SMD Transient Voltage Suppressor TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit. 0.155 3.94 0.130(3.30) 0.087(2.20)

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: SMD Transient Voltage Suppressor TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit. 0.155 3.94 0.130(3.30) 0.087(2.20)

SPL146

Abstract: SPL146-0R4 A35 SMD SPL146-1R0 smd a35 SPL146-0R2 18A-24A
Contextual Info: Power Inductor SMD TYPE SPL146 TYPE FEATURES APPLICATIONS Notebook computers DC/DC converters Battery power equipment Servers Big current 50A Footprint compatible with most standard Lower temperature rise at big current Low DCR (0.5m ) Without noise AT 25 o C: 100KHz, 0.1V

Contextual Info: SMD Transient Voltage Suppressor TVP04A6V8-G Thru. TVP04A601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 400 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.179(4.55) 0.161(4.10) -400W peak pulse power capability with a 10/1000 s

smd transistor ja

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type N-Channel PowerTrench MOSFET KDD2572 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Typ. , VGS = 10V, ID = 9A Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) 2.3 Qualified to AEC Q101